| Patent application number | Description | Published |
|---|
| 20080207917 | POLYMER HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE - A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage. | 08-28-2008 |
| 20080226896 | NANOPARTICLES WITH COVALENTLY BONDED STABILIZER - An apparatus composed of: (a) a substrate; and (b) a deposited composition comprising a liquid and a plurality of metal nanoparticles with a covalently bonded stabilizer. | 09-18-2008 |
| 20080237581 | DEVICE WITH PHASE-SEPARATED DIELECTRIC STRUCTURE - An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer. | 10-02-2008 |
| 20080242112 | PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS - A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation. | 10-02-2008 |
| 20080246095 | AMBIPOLAR TRANSISTOR DESIGN - An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area. | 10-09-2008 |
| 20080277724 | ELECTRONIC DEVICE HAVING A DIELECTRIC LAYER - An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties. | 11-13-2008 |
| 20090036689 | SUBSTITUTED INDOLOCARBAZOLES - A substituted indolocarbazole comprising at least one optionally substituted thienyl. | 02-05-2009 |
| 20090039344 | POLY[BIS(ETHYNYL)HETEROACENE]S AND ELECTRONIC DEVICES GENERATED THEREFROM - An electronic device comprising a polymer of Formula or Structure (I) | 02-12-2009 |
| 20090140236 | THIN FILM TRANSISTORS - A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility. | 06-04-2009 |
| 20090140237 | THIN FILM TRANSISTORS - A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility. | 06-04-2009 |
| 20090142482 | Methods of Printing Conductive Silver Features - A method of forming a conductive ink silver features on a substrate by printing a silver compound solution and a hydrazine compound reducing agent solution on the surface of a substrate with a printhead. The silver compound solution and the hydrazine compound reducing agent solution are mixed just before, during, or following the printing of both solutions on the surface of the substrate, and the silver compound is then reduced to form conductive silver ink features on the substrate. | 06-04-2009 |
| 20090179194 | ORGANIC THIN FILM TRANSISTORS - An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer. | 07-16-2009 |
| 20090181183 | Stabilized Metal Nanoparticles and Methods for Depositing Conductive Features Using Stabilized Metal Nanoparticles - A metal nanoparticle composition includes a thermally decomposable or UV decomposable stabilizer. A method of forming conductive features on a substrate, includes providing a solution containing metal nanoparticles with a stabilizer; and liquid depositing the solution onto the substrate, wherein during the deposition or following the deposition of the solution onto the substrate, decomposing and removing the stabilizer, by thermal treatment or by UV treatment, at a temperature below about 180° C. to form conductive features on the substrate. | 07-16-2009 |
| 20090256138 | ORGANIC THIN FILM TRANSISTOR - Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): | 10-15-2009 |
| 20090256139 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 10-15-2009 |
| 20090274834 | BIMETALLIC NANOPARTICLES FOR CONDUCTIVE INK APPLICATIONS - A method of forming conductive features on a substrate from a solution of metal nanoparticles by providing a depositing solution and liquid depositing the depositing solution onto a substrate. The depositing solution is then heated to a temperature below about 140° C. to anneal the first and second nanoparticles and remove any reaction by-products. The depositing solution may be comprised of a mixture of first metal nanoparticles and second metal nanoparticles or a combination of first metal nanoparticles and a soluble second metal nanopartical precursor. Furthermore, the average diameter of the first metal nanoparticles is about 50 nm to about 100 μm and the average diameter of the second metal nanoparticles is about 0.5 nm to about 20 nm. | 11-05-2009 |
| 20090301344 | PHOTOCHEMICAL SYNTHESIS OF BIMETALLIC CORE-SHELL NANOPARTICLES - A method of forming bimetallic core-shell metal nanoparticles including a core of a first metal material and a shell of a second metal material, the method including photochemically producing metallic nanoparticle cores of the first metal material, and forming a shell of the second metal material around the cores. The shell can be formed by adding shell-forming precursor materials to a solution or suspension of the cores and photochemically forming the shells around the cores, or by separately photochemically producing metallic nanoparticles of the second metal material and mixing the metallic nanoparticles of the second metal material and the metallic nanoparticle cores to cause the metallic nanoparticles of the second metal material to form a shell around the metallic nanoparticle cores. | 12-10-2009 |
| 20100038714 | DEVICE AND PROCESS INVOLVING PINHOLE UNDERCUT AREA - An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit. | 02-18-2010 |
| 20100090200 | ORGANIC THIN FILM TRANSISTORS - Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (1): | 04-15-2010 |
| 20100090201 | ORGANIC THIN FILM TRANSISTORS - A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(hydroxyalkyl acrylate-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed. | 04-15-2010 |
| 20100093129 | SEMICONDUCTING INK FORMULATION - A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors. | 04-15-2010 |
| 20100121004 | PURIFICATION PROCESS FOR SEMICONDUCTING MONOMERS - Disclosed is a process for purifying monomers of Formula (II): | 05-13-2010 |
| 20100123123 | ORGANIC THIN-FILM TRANSISTORS - A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): | 05-20-2010 |
| 20100123124 | ORGANIC THIN-FILM TRANSISTORS - A thin-film transistor uses a semiconducting layer comprising a semiconducting material of (A): | 05-20-2010 |
| 20100219409 | POLYTHIOPHENES AND DEVICES THEREOF - An electronic device containing a polythiophene | 09-02-2010 |
| 20100230670 | DEVICE CONTAINING COMPOUND HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE - An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage. | 09-16-2010 |
| 20100233361 | METAL NANOPARTICLE COMPOSITION WITH IMPROVED ADHESION - A composition that may be as an electronic circuit element includes a metal nanoparticle, an adhesion promoter compound and a solvent. The adhesion promoter compound may be a hydrolytic silane with at least one organic functional moiety. A method of forming conductive features on a substrate includes depositing a composition containing metal nanoparticles, an adhesion promoter compound and a solvent onto a substrate, and heating the deposited composition to a temperature from about 100° C. to about 200° C. | 09-16-2010 |
| 20110034668 | ELECTRONIC DEVICES - An electronic device, such as a thin film transistor containing a semiconductor of the Formula: | 02-10-2011 |
| 20120034736 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 02-09-2012 |
| 20120043512 | SILVER NANOPARTICLE INK COMPOSITION FOR HIGHLY CONDUCTIVE FEATURES WITH ENHANCED MECHANICAL PROPERTIES - A conductive ink composition comprising organic-stabilized silver nanoparticles and a solvent, and a polyvinyl alcohol derivative resin of Formula (1) | 02-23-2012 |
| 20120070570 | CONDUCTIVE THICK METAL ELECTRODE FORMING METHOD - A method of forming conductive features on a substrate, the method includes, filling a flexible stamp with a metal nanoparticle composition, depositing the metal nanoparticle composition onto the substrate, and heating the deposited metal nanoparticle composition during or after the depositing to form the conductive features. | 03-22-2012 |
| 20120178890 | ORGANIC THIN-FILM TRANSISTORS - A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): | 07-12-2012 |
| 20140141361 | Surface Control Apparatuses Reducing Print Defects and Methods of Using Same - Surface control apparatuses including an imaging member having a charge retentive surface for developing an electrostatic latent image thereon. The imaging member including a substrate, a photoconductive layer disposed on the substrate, and a surface control (SC) layer disposed on the outer surface of the imaging member. Image forming apparatuses having such surface control apparatuses installed and methods of reducing print defects using such image forming apparatuses. | 05-22-2014 |
| 20140312284 | CONDUCTIVE INK COMPOSITIONS AND METHODS FOR PREPARATION OF STABILIZED METAL-CONTAINING NANOPARTICLES - Processes for preparing stabilized metal-containing nanoparticles comprising silver and/or a silver alloy composite by reacting a silver compound with a reducing agent comprising a hydrazine compound at a temperature between about 20° C. and about 60° C. The reaction being carried out by incrementally adding the silver compound or a mixture of the silver compound and a stabilizer to a solution comprising the reducing agent, a stabilizer, and a solvent. Conductive ink compositions containing stabilized metal-containing nanoparticles prepared by such processes. | 10-23-2014 |
| 20140377457 | METHOD OF FORMING METAL NANOPARTICLE DISPERSION AND DISPERSION FORMED THEREBY - A metal nanoparticle dispersion is made by mixing ingredients. The ingredients comprise a solvent; a plurality of metal nanoparticles, the metal nanoparticles comprising an oxide formed thereon; and a reducing agent. The reducing agent is included in an amount sufficient to react with the oxide to significantly increase a conductivity of a metal film that is formable from the nanoparticle dispersion using a deposition and heating process compared with the conductivity of a metal film formable from the same nanoparticle composition without the reducing agent using the same deposition and heating process. Methods for making the metal nanoparticle dispersion, as well as for making a film from the dispersion, are also disclosed. | 12-25-2014 |
