Patent application number | Description | Published |
20090189154 | ZnO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE - A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage. | 07-30-2009 |
20100266164 | METHOD AND APPARATUS FOR MAKING AND DETECTING A DOCUMENT VERIFICATION INDICATOR USING OPTICAL PATTERN ENCRYPTION - A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device. | 10-21-2010 |
20120061660 | ZnO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE - A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage. | 03-15-2012 |
20130017567 | ZINC OXIDE-BASED NANOSTRUCTURE MODIFIED QCM FOR DYNAMIC MONITORING OF CELL ADHESION AND PROLIFERATION - A dynamic and noninvasive method of monitoring the adhesion and proliferation of biological cells through multimode operation (acoustic and optical) using a ZnO nanostructure-modified quartz crystal microbalance (ZnO | 01-17-2013 |
20130221346 | Zinc Oxide-Based Thin Film Transistor Biosensors with High Sensitivity and Selectivity - This application discloses ZnO film transistor-based immunosensors ZnO-bioTFT), 2T biosensor arrays formed from two integrated ZnO-bioTFTs. ITIR-based nonvolatile memory (NVM) arrays formed from ZnO-bioTFT (T) integrated with ZnO-based resistive switches (R), as well as integrated bioTFT (IBTFT) sensor systems formed from 2T biosensor arrays and ITIR NVM arrays. Through biofunctionalization, these biosensors can perform immunosensing with high seminvity and selectivity, and therefore have a wide range of applications, for example, in detecting target biomolecules or small molecules, and potential application in cancer diagnosis and treatment. | 08-29-2013 |
20140027702 | MULTIFUNCTIONAL ZINC OXIDE NANO-STRUCTURE-BASED CIRCUIT BUILDING BLOCKS FOR RE-CONFIGURABLE ELECTRONICS AND OPTOELECTRONICS - A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed. | 01-30-2014 |
20150155334 | ZnO-Based System on Glass (SOG) for Advanced Displays - A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display. | 06-04-2015 |
20150318332 | MULTIFUNCTIONAL ZINC OXIDE NANO-STRUCTURE-BASED CIRCUIT BUILDING BLOCKS FOR RE-CONFIGURABLE ELECTRONICS AND OPTOELECTRONICS - A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed. | 11-05-2015 |