Patent application number | Description | Published |
20110108862 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode. | 05-12-2011 |
20120193652 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect). | 08-02-2012 |
20120193653 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect. | 08-02-2012 |
20120211783 | LIGHT-EMITTING-DIODE ARRAY WITH MICROSTRUCTURES IN GAP BETWEEN LIGHT-EMITTING-DIODES - A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first LED device and the second LED device are positioned on a common substrate. At least one polymer material is between the first LED device and the second LED device. A plurality of microsctructures are in the at least one polymer material. An interconnect is formed on top of the at least one polymer material to electrically connect the first electrode and the second electrode. | 08-23-2012 |
20120228651 | LIGHT-EMITTING-DIODE ARRAY - A light-emitting-diode (LED) array includes a first LED unit having a first electrode and a second LED unit having a second electrode. The first LED unit and the second LED unit are positioned on a common substrate and are separated by a gap. Two or more polymer materials form a multi-layered structure in the gap. A first polymer material substantially fills a lower portion of the gap and at least one additional polymer material substantially fills a remainder of the gap above the first polymer material. A kinematic viscosity of the first polymer material is less than a kinematic viscosity of the at least one additional polymer material. An interconnect, positioned on top of the at least one additional polymer material, electrically connects the first electrode and the second electrode. | 09-13-2012 |
20130020597 | POSTS IN GLUE LAYER FOR GROUP-III NITRIDE LEDS - A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure. | 01-24-2013 |
20130023073 | USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate. | 01-24-2013 |
20130023074 | USING ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices. | 01-24-2013 |
20130161654 | REFLECTIVE LAYER ON DIELECTRIC LAYER FOR LED ARRAY - A light emitting diode array is described. The array includes a first light emitting diode with a first electrode and a second light emitting diode with a second electrode. The second light emitting diode is separated from the first light emitting diode. A first dielectric layer is positioned between the first light emitting diode and the second light emitting diode. An interconnect is located at least partially on the first dielectric layer that connects the first electrode to the second electrode. A second dielectric layer is formed over the first dielectric layer and the interconnect. A reflective layer is formed over the second dielectric layer. A permanent substrate is coupled to the reflective layer. | 06-27-2013 |
20130161667 | PATTERNED REFLECTIVE LAYER ON DIELECTRIC LAYER FOR LED ARRAY - A light emitting diode array includes a first light emitting diode with a first electrode and a second light emitting diode with a second electrode. A first dielectric layer is positioned between the light emitting diodes. A first portion of the first dielectric layer at least partially covers the first light emitting diode and a second portion of the first dielectric layer at least partially covers the second light emitting diode. An interconnect is located at least partially on the first dielectric layer. The interconnect connects the first electrode to the second electrode. A reflective layer is formed over at least the first and second portions of the first dielectric layer. A permanent substrate is coupled to a side of the light emitting diodes having the reflective layer. | 06-27-2013 |
20130200419 | SEMICONDUCTOR LIGHT EMITTING COMPONENT - A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode. | 08-08-2013 |
20130277692 | STACKED LED DEVICE WITH DIAGONAL BONDING PADS - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. | 10-24-2013 |
20130285010 | STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. | 10-31-2013 |
20130299774 | LIGHT-EMITTING DIODE DEVICE AND A METHOD OF MANUFACTURING THE SAME - A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer. | 11-14-2013 |
20140070261 | STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. An electrode pattern is located on an upper surface of the second epitaxial structure, wherein the posts are located under electrodes in the electrode pattern. | 03-13-2014 |