Patent application number | Description | Published |
20100123505 | ULTRA-LOW VOLTAGE LEVEL SHIFTING CIRCUIT - A voltage level shifting circuit for an integrated circuit system having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) is disclosed, the voltage level shifting circuit comprises a pair of cross coupled PMOS transistors connected to the VCCH, a NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, the first blocking device being configured to conduct active current when the first signal is in static state or transitions from a logic HIGH to a logic LOW, and the first blocking device being configured to shut off active current when the first signal transitions from the logic LOW to the logic HIGH. | 05-20-2010 |
20100124099 | 8T LOW LEAKAGE SRAM CELL - This invention discloses a static random access memory (SRAM) cell comprising a pair of cross-coupled inverters having a storage node, and a NMOS transistor having a gate terminal, a first and a second source/drain terminal connected to the storage node, a read word-line (RWL) and a read bit-line (RBL), respectively, the RWL and RBL being activated during a read operation and not being activated during any write operation. | 05-20-2010 |
20100238753 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - An integrated circuit includes at least one memory array for storing data. A first switch is coupled with the memory array. A first power line is coupled with the first switch. The first power line is operable to supply a first power voltage. A second switch is coupled with the memory array. A second power line is coupled with the second switch. The second power line is operable to supply a second power voltage for retaining the data during a retention mode. A third power line is coupled with the memory array. The third power line is capable of providing a third power voltage. | 09-23-2010 |
20100278002 | CIRCUIT AND METHOD OF PROVIDING CURRENT COMPENSATION - Some embodiments regard a method comprising: during a leakage sampling phase, recognizing a voltage level dropped due to a leakage current associated with a signal linestoring the voltage level; and during a reading phase, using the voltage level to provide an amount of compensation current to the signal line. | 11-04-2010 |
20110187414 | PBTI TOLERANT CIRCUIT DESIGN - In an embodiment related to a sense amplifier, the sense amplifier includes a cross latch includes a pair of nodes, a first pair of transistors, a second pair of transistors, a third node, and a circuit. The pair of nodes includes a first node and a second node configured to store data for the sense amplifier. The second pair of transistors includes a first NMOS transistor and a second NMOS transistor. A first gate of the first NMOS transistor is coupled to the first node, and a second gate of the second NMOS transistor is coupled to the second node. The third node is coupled to a first source of the first NMOS transistor and a second source of the second NMOS transistor. When appropriate, the circuit is configured to provide a voltage level to the third node. | 08-04-2011 |
20110199847 | SENSE AMPLIFIER WITH LOW SENSING MARGIN AND HIGH DEVICE VARIATION TOLERANCE - In an embodiment related to a sense amplifier, the sense amplifier includes a pair of transistors (e.g., transistors P | 08-18-2011 |
20120147688 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - An integrated circuit includes at least one memory array for storing data. A first switch is coupled with the memory array. A first power line is coupled with the first switch. The first power line is operable to supply a first power voltage. A second switch is coupled with the memory array. A second power line is coupled with the second switch. The second power line is operable to supply a second power voltage for retaining the data during a retention mode. A third power line is coupled with the memory array. The third power line is capable of providing a third power voltage. | 06-14-2012 |
20120306537 | ULTRA-LOW VOLTAGE LEVEL SHIFTING CIRCUIT - A voltage level shifter having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) includes a first PMOS transistor and a second PMOS transistor each with a source connected to the VCCH, a gate of the first PMOS transistor being coupled to a drain of the second PMOS transistor, and a gate of the second PMOS transistor being coupled to a drain of the first PMOS transistor. The voltage level shifter further includes a first NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, such that the voltage level shifter can operate at a lower VCCL. | 12-06-2012 |
20130028008 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - A memory array including at least one cross-latched pair of transistors for storing data. The memory array further includes a first power line for supplying a first reference voltage and a second power line for supplying a second reference voltage. The memory array further includes a first switch having a first output coupled with the at least one cross-latched pair of transistors for selectively connecting the at least one cross-latched pair of transistors to the first power line. The memory array further includes a second switch having a second output coupled with the at least one cross-latched pair of transistors for selectively connecting the at least one cross-latched pair of transistors to the second power line. The first output is coupled to the second output. | 01-31-2013 |
20140269024 | MEMORY DEVICE AND METHOD FOR WRITING THEREFOR - A method of writing a memory cell includes, during a write cycle, causing a voltage level at a power terminal of the memory cell to change from a supply voltage level toward a first voltage level. The voltage level at the power terminal of the memory cell is maintained at the first voltage level for a first predetermined duration. The voltage level at the power terminal of the memory cell is maintained at a second voltage level for a second predetermined duration, where the second voltage level is between the first voltage level and the supply voltage level. During the write cycle, the voltage level at the power terminal of the memory cell is caused to change from the first voltage level toward the supply voltage level. | 09-18-2014 |