Patent application number | Description | Published |
20080205468 | SEMICONDUCTOR LASER DEVICE HAVING A LOW REFLECTION FILM OF STABLE REFLECTANCE - A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n | 08-28-2008 |
20080273556 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al | 11-06-2008 |
20090162962 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER - The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers. | 06-25-2009 |
20090185595 | SEMICONDUCTOR LASER - A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition. | 07-23-2009 |
20090213891 | SEMICONDUCTOR LASER - A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The sum of the optical film thicknesses of the first insulating film and the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than that of the second insulating film to GaN. The refractive index of the first insulating film is 1.9 or less and the refractive index of the second insulating film is 2 to 2.3. | 08-27-2009 |
20110044069 | LIGHT SOURCE DEVICE AND METHOD OF PRODUCING THE SAME - An objective is to provide a light source device having a light emission source such as a semiconductor laser (LD), an LED and a lamp, and an optical part such as a lens and a fiber for transmitting, transferring and light-focusing, in which, by controlling the amount of sulfate ions inside the device at a low level, adhesion of ammonium sulfate to the optical part can be prevented. The light source device includes a light source for emitting light, an optical part for processing light emitted from the light source, and a housing in which the optical part is housed, or to which the optical part is mounted, and the housing is formed by machining material that includes no sulfur component, and the material is exposed on the surface thereof. | 02-24-2011 |
20110151759 | COIN PROCESSING APPARATUS - A coin processing apparatus according to the present invention includes: a coin conveying section that conveys coins on a coin passage; an identifying section that identifies coins on the coin passage; at least one discharging section that discharges normal coins that are identified as normal by the identifying section from the coin passage; at least first and second removing sections that remove abnormal coins that are identified as abnormal by the identifying section from the coin passage; and a control section that distributes abnormal coins to either one of the first and second removing sections in order to remove the abnormal coins, in accordance with identification factors of the abnormal coins. | 06-23-2011 |