Patent application number | Description | Published |
20080220580 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor integrated circuit device having on the same substrate both a high breakdown voltage MISFET and a low breakdown voltage MISFET is provided. An element isolation trench is formed in advance so that the width thereof is larger than the sum of the thickness of a polycrystalline silicon film serving as a gate electrode of a low breakdown voltage, the thickness of a gate insulating film and an alignment allowance in processing of a gate electrode in a direction orthogonal to the extending direction of the gate electrode and is larger than the thickness of the polycrystalline silicon film in a planar region not overlapping the gate electrode. It is possible to decrease the number of manufacturing steps for the semiconductor integrated circuit device. | 09-11-2008 |
20090065888 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a main surface of a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region in circular form, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-12-2009 |
20120187520 | Semiconductor Device Comprising A Schottky Barrier Diode - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 07-26-2012 |
20140061847 | SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY BARRIER DIODE - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-06-2014 |
Patent application number | Description | Published |
20110310643 | POWER CONVERSION DEVICE - According to one embodiment, an electronic device includes a positive electrode, a negative electrode, a first terminal, a second terminal, a first plurality of switching elements and anti-parallel diodes coupled between the positive electrode and the first terminal and the second terminal, a second plurality of switching elements and anti-parallel diodes coupled between the negative electrode and the first terminal and the second terminal and a PiN diode coupled between the positive electrode and the negative electrode with reverse polarity. | 12-22-2011 |
20110316460 | VEHICLE CONTROL SYSTEM - A system and method for a vehicle control system is disclosed herein. The system includes an inverter circuit, a permanent magnet synchronous motor, and a crossover connected between the inverter circuit and the permanent magnet synchronous motor. The system may also include at least one current sensor installed between the inverter circuit and the permanent magnet synchronous motor. A contactor may also be connected between the inverter circuit and the permanent magnet synchronous motor and may pass or shut off electricity between the inverter circuit and the permanent magnet synchronous motor. The system may also include a control unit connected to the contactor and the current sensor. The control unit may detect a current abnormality using information from the current sensor and open the contactor if an abnormality is detected. | 12-29-2011 |
20120249032 | ELECTRIC VEHICLE CONTROL DEVICE - Disclosed herein are electric vehicle control device which can distribute the heat generated by the semiconductor devices in the DC/AC converter efficiently. Also disclosed herein are methods of converting DC to AC while keeping the heat value of the semiconductor devices stable. | 10-04-2012 |
20140312810 | ELECTRIC VEHICLE CONTROL APPARATUS AND ELECTRIC VEHICLE - According to one embodiment, an electric vehicle control apparatus is provided with a converter having a diode and a switching device which convert an AC voltage or a DC voltage supplied from an input side into a DC voltage, whose output side is connected to a main motor through an inverter, a battery connected to the converter through a reactor, to provide a power source for the main motor, and a boosting chopper circuit composed the diode and the switching device which the converter has, so as to boost a voltage of the battery. | 10-23-2014 |
Patent application number | Description | Published |
20110104449 | HEARTH ROLL HAVING EXCELLENT MN BUILD-UP RESISTANCE, THERMAL SHOCK RESISTANCE, AND ABRASION RESISTANCE, AND THERMAL SPRAY MATERIAL THEREFOR - Disclosed is a hearth roll having excellent build-up resistance against an Mn-containing substance, excellent thermal shock resistance, excellent wear resistance and a long lifetime. Specifically disclosed is a thermal spraying material to be thermally sprayed on the surface of a hearth roll. The thermal spraying material comprises: a heat-resistant metal (including an alloy) which contains Al and can be used at a temperature equal to or higher than 900° C.; and a multiple oxide of at least one metal selected from rare earth elements (Sc, Y, lanthanum and lanthanoid), metals belonging to Group 3A on the periodic table and transition metals excluding Zr, Hf and Fe, wherein the content of Al (A) (mole) and the content of the rare earth clement (Sc, Y, lanthanum and lanthanoid) (B) (mole) fulfill the requirement represented by the following formula: 0.3≦(A/B)≦4.0. | 05-05-2011 |
20130330520 | HEARTH ROLL HAVING EXCELLENT MN BUILD-UP RESISTANCE, THERMAL SHOCK RESISTANCE, AND ABRASION RESISTANCE, AND THERMAL SPRAY MATERIAL THEREFOR - A long-life hearth roll having excellent build-up resistance against Mn-based substances, and which has excellent thermal shock resistance and abrasion resistance is provided. The thermal spray material that is thermally sprayed onto a surface of the hearth roll is characterized by including a heat resistant metal (including an alloy) that includes Al and can be used at 900° C. or more, and a complex oxide of one kind or two kinds or more of a rare earth element (Sc, Y, lanthanum, and lanthanoids) and a transition metal excluding group 3A of the periodic table, Zr, Hf, and Fe, wherein when an Al content is A (moles), and a rare earth element (Sc, Y, lanthanum, and lanthanoids) content is B (moles), the thermal spray material satisfies a condition of 0.3≦(A/B)≦4.0. | 12-12-2013 |
20140038800 | HEARTH ROLL HAVING HIGH Mn BUILD-UP RESISTANCE - The hearth roll includes a thermally sprayed coating formed on the surface thereof. The thermally sprayed coating includes a nitride, an oxide, or a multiple oxide, and a matrix material composed of one or two or more metals. In the hearth roll having high Mn build-up resistance, the following expressions are satisfied: 3% by volume≦X | 02-06-2014 |
Patent application number | Description | Published |
20140369235 | AD HOC NETWORK SYSTEM AND ROUTE SELECTION METHOD - An ad hoc network system includes a plurality of nodes that communicate with a specific node. Each of the nodes includes a calculator and a selector. The calculator calculates a cumulative value of the number of communication nodes connected through the node by adding the numbers of communication nodes from an upstream side, which is a side closer to the specific node than the node, to the node. The selector selects a node serving as a connection destination out of the nodes located on the upstream side on the basis of the cumulative value of the number of communication nodes calculated by the calculator. | 12-18-2014 |
20140369342 | NODE AND METHOD FOR COMMUNICATION CONTROL - A node includes a time difference measurement unit and a time setting unit. The time difference measurement unit measures a time difference between a first time based on latest received time information and a second time based on second-latest received time information. The time setting unit calculates an adjustment time difference when the time difference exceeds an allowable range of error that is smaller than an allowable range of maintainable communication, sets a time obtained by adding the adjustment time difference and the second time to the time of the node when the adjustment time difference is within the allowable range of maintainable communication, and sets a time obtained by adding a time difference corresponding to the allowable range of maintainable communication and the second time to the time of the node when the adjustment time difference exceeds the allowable range of maintainable communication. | 12-18-2014 |
20140372502 | COMMUNICATION DEVICE SEARCHING METHOD, COMMUNICATION DEVICE, AND AD HOC NETWORK SYSTEM - A mobile terminal being a searching source that searches for a communication device transmits a searching request addressed to a communication device being a searching destination using a plurality of channels without waiting for a reply to the searching request. A communication device adjacent to the mobile terminal being the searching source, upon receiving a reply to the searching request transmitted by the transmitting from the searching destination, holds the received reply. The mobile terminal being the searching source transmits an inquiry to the adjacent communication device using a plurality of channels about whether a reply to the transmitted searching request has been received from the searching destination. With this configuration, in an ad hoc network with a reactive scheme, the time taken for searching related to a partner device can be shortened. | 12-18-2014 |