Patent application number | Description | Published |
20100296354 | SRAM AND METHOD FOR ACCESSING SRAM - A static random access memory includes: a memory cell connected with a pair of bit lines and supplied with a power supply voltage from a first power supply; a precharge circuit connected with the pair of bit lines and configured to precharge the pair of bit lines with a precharge voltage; and a voltage reducing circuit connected between the precharge circuit and the first power supply. The voltage reducing circuit includes: a control circuit comprising a differential amplifier circuit which is configured to amplify a difference input of a reference voltage generated through resistance division of the power supply voltage and the precharge voltage supplied to a node to output a control signal; and a voltage reduction control transistor connected between the node and the first power supply and configured to generate the precharge voltage in response to the control signal. The precharge circuit includes: precharge transistors connected between the bit lines and the node and configured to control supply of the precharge voltage to the bit lines in response to a first precharge control signal. | 11-25-2010 |
20110235387 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device provided with a new bit line hierarchization method that enables further reduction of power consumption is provided. The semiconductor memory device includes multiple memory blocks provided in a matrix configuration and multiple main bit lines provided in correspondence with the memory blocks. Each of the memory blocks includes: multiple memory cells provided in a matrix configuration; multiple sub bit lines provided on a column-by-column basis; multiple word lines provided with respect to each of columns and rows and common to multiple memory blocks; and a switch circuit that couples a corresponding main bit line to any of the sub bit lines. In the operation of reading a target cell as the target of read, a main bit line corresponding to the target cell is selected, a sub bit line corresponding to the column of the target cell is selected through the switch circuit; and a word line corresponding to the column and the row of the target cell is selected from among the word lines. | 09-29-2011 |
20110252416 | NON-TRANSITORY COMPUTER READABLE MEDIUM, DEVICE DRIVER SETTING DEVICE, INSTALL DEVICE, DEVICE DRIVER PACKAGE, METHOD FOR SETTING DEVICE DRIVER AND INSTALL METHOD - A device driver setting device includes an acquiring unit, an allowing unit, and a writing unit. The acquiring unit acquires, from a data group constituting a device driver, condition information for each of one or more items which the device driver refers to. The condition information for each of the one or more items indicates a condition which can be taken by a setting value to be set in each of the items. The allowing unit allows a user to select a setting value which is to be set in each of at least a part of the items acquired, in accordance with the condition information associated with each of the at least a part of the items acquired. The writing unit writes setting values which are to be set in the respective items acquired into the data group based on a result of the selecting. | 10-13-2011 |
Patent application number | Description | Published |
20090061092 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table. | 03-05-2009 |
20100032838 | AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM - Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed. | 02-11-2010 |
20110318919 | SURFACE TREATMENT FOR A FLUOROCARBON FILM - A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step. | 12-29-2011 |