Patent application number | Description | Published |
20100102360 | Method for producing group III nitride semiconductor and template substrate - The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less. | 04-29-2010 |
20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 10-06-2011 |
20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 10-06-2011 |
20120322189 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×10 | 12-20-2012 |
20130017639 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM BOYAMA; ShinyaAACI Kiyosu-shiAACO JPAAGP BOYAMA; Shinya Kiyosu-shi JPAANM Ushida; YasuhisaAACI Kiyosu-shiAACO JPAAGP Ushida; Yasuhisa Kiyosu-shi JP - The present invention is a method for producing a light- emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process. | 01-17-2013 |
20130256687 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting device | 10-03-2013 |
20130328097 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A group III nitride semiconductor light-emitting element having a rectangular shape in a planar view, the element comprises an n-electrode connecting to an n-type layer and a p-electrode connecting to a p-type layer, on a same plane side; wherein the n-electrode has a n-wiring-shaped part that is wiring-shaped and extending along a first side of the rectangular shape; the p-electrode has a p-wiring-shaped part that is wiring-shaped and extending along the first side of the rectangular shape; when a distance that is between the n-wiring-shaped part and the p-wiring-shaped part is a, and a distance that is between the one side of the rectangular shape and at least one of the n-wiring-shaped part and the p-wiring-shaped part and that is nearest to the first side is b, the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy 1.65≦a/b≦7.00. | 12-12-2013 |
20140167222 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE SUBSTRATE - A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor. | 06-19-2014 |