Patent application number | Description | Published |
20130240720 | FOCUSED ION BEAM APPARATUS AND METHOD OF ADJUSTING ION BEAM OPTICS - Provided is a focused ion beam apparatus including a control portion configured to: store in advance, in a condenser voltage table, a calculation value of a condenser voltage for obtaining a reference beam current for all each of a plurality of apertures; obtain an experimental value of the condenser voltage for obtaining the reference beam current for a reference aperture; obtain a correction value of the condenser voltage by subtracting the calculation value stored for the reference aperture from the experimental value for the reference aperture; obtain setting values of the condenser voltage by adding the correction value to the calculation values stored for each of the plurality of the apertures; and store the obtained setting value in the condenser voltage table. | 09-19-2013 |
20130248483 | METHOD FOR FABRICATING EMITTER - A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape. | 09-26-2013 |
20130248732 | ION BEAM APPARATUS - An ion beam apparatus including: an ion source configured to emit an ion beam; a condenser lens electrode configured to condense the ion beam; a condenser lens power source configured to apply a voltage to the condenser lens electrode; a storage portion configured to store, a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value; and a control portion configured to retrieve the third voltage value from the storage portion and set the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieve the fourth voltage value from the storage portion and set the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode. | 09-26-2013 |
20140246397 | METHOD FOR FABRICATING EMITTER - A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape. | 09-04-2014 |
20140284474 | FOCUSED ION BEAM SYSTEM - A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image. | 09-25-2014 |
20140291542 | EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM - There is provided an emitter structure, a gas ion source including the emitter structure, and a focused ion beam system including the gas ion source. The emitter structure includes a pair of conductive pins which are fixed to a base member, a filament which is connected between the pair of conductive pins, and an emitter which is connected to the filament and has a sharp tip. A supporting member is fixed to the base material, and the emitter is connected to the supporting member. | 10-02-2014 |
20140292189 | FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF - A focused ion beam apparatus is configured to perform at least one of a process of controlling an operation of a cooling unit so that a temperature of a wall surface contacting a source gas in an ion source chamber is maintained at a temperature higher than a temperature at which the source gas freezes and a process of controlling an operation of a heater so that an emitter is temporarily heated when the source gas is exchanged. | 10-02-2014 |
20150047079 | Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus - There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. | 02-12-2015 |
20150053866 | Repair Apparatus - There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. | 02-26-2015 |