Patent application number | Description | Published |
20090165720 | SUBSTRATE TREATING APPARATUS - A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member. | 07-02-2009 |
20090214758 | A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER - In a processing apparatus, a process gas including a source gas (TiCl | 08-27-2009 |
20110174630 | FILM FORMATION METHOD AND STORAGE MEDIUM - A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating. | 07-21-2011 |
20120028462 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac) | 02-02-2012 |
20120040085 | METHOD FOR FORMING Cu FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a wafer (W) is loaded into a chamber | 02-16-2012 |
20120064247 | METHOD FOR FORMING CU FILM, AND STORAGE MEDIUM - A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon. | 03-15-2012 |
20120064248 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate. | 03-15-2012 |
20120164328 | FILM FORMATION METHOD AND STORAGE MEDIUM - A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate. | 06-28-2012 |
20120171365 | FILM FORMING APPARATUS, FILM FORMING METHOD AND STORAGE MEDIUM - The film forming apparatus includes a chamber | 07-05-2012 |