Patent application number | Description | Published |
20120140358 | MAGNETIC HEAD FOR PERPENDICULAR MAGNETIC RECORDING WITH SHIELD AROUND MAIN MAGNETIC POLE - A magnetic head includes a main magnetic pole, a shield having an end face located in a medium facing surface to wrap around an end face of the main magnetic pole, and a gap part provided between the main magnetic pole and the shield. The shield includes a bottom shield, two side shields, and a top shield. The gap part includes first and second gap layers. In a manufacturing method of the magnetic head, a mold is formed on the top surface of the bottom shield, the mold having a shape determined by photolithography and being intended to be removed later. Next, the two side shields are formed on the top surface of the bottom shield by performing plating without forming a seed layer. Next, the mold is removed and then the first gap layer, the main magnetic pole, the second gap layer, and the top shield are formed in succession. | 06-07-2012 |
20130068722 | METHOD OF MANUFACTURING PLASMON GENERATOR - A method of manufacturing the plasmon generator includes the steps of: forming a base part made of a dielectric material; forming a metal film that is to later become the plasmon generator; and forming a filler layer made of a dielectric material. The base part includes a base surface and a protruding part that protrudes from the base surface. The protruding part has a top surface that is different in level from the base surface, and a first sidewall connecting the top surface of the protruding part to the base surface. The metal film includes an adhesion part adhering to the first sidewall. The filler layer has a second sidewall disposed such that the adhesion part is interposed between the first sidewall and the second sidewall. | 03-21-2013 |
20140291284 | METHOD OF MANUFACTURING A NEAR-FIELD LIGHT GENERATOR INCLUDING A WAVEGUIDE AND A PLASMON GENERATOR - In a method of manufacturing a near-field light generator, a structure including a core and a polishing stopper layer disposed on the top surface of the core is formed on a first cladding layer. Next, a cladding material layer is formed to cover the first cladding layer and the structure. The cladding material layer is then polished until the polishing stopper layer is exposed. Next, the polishing stopper layer is removed so that the cladding material layer has a protruding portion protruding upward to a higher level than the top surface of the core. The cladding material layer is then polished so as to remove the protruding portion and thereby make the cladding material layer into a second cladding layer. Then, a third cladding layer and a plasmon generator are formed. | 10-02-2014 |
20150380016 | MAGNETIC HEAD FOR PERPENDICULAR MAGNETIC RECORDING INCLUDING ANGLED SIDE SHIELDS SURFACES - A first side shield has a first sidewall and a second sidewall. A second side shield has a third sidewall and a fourth sidewall. The distance between the first sidewall and the third sidewall decreases with increasing proximity to the top surface of a substrate. The second and fourth sidewalls are close to perpendicular to the top surface of the substrate. Each of the second and fourth sidewalls has an edge farthest from the top surface of the substrate, the edge being parallel to the medium facing surface. The main pole has a first, a second, a third and a fourth side surface. The first side surface is opposed to the first sidewall. A portion of the second side surface is opposed to the second sidewall. The third side surface is opposed to the third sidewall. A portion of the fourth side surface is opposed to the fourth sidewall. | 12-31-2015 |
20160055869 | MAGNETIC HEAD FOR PERPENDICULAR MAGNETIC RECORDING INCLUDING TWO SIDE SHIELDS - A first side shield has a first sidewall and a second sidewall. A second side shield has a third sidewall and a fourth sidewall. The distance between the first sidewall and the third sidewall decreases with increasing proximity to the top surface of a substrate. The second and fourth sidewalls are close to perpendicular to the top surface of the substrate. Each of the second and fourth sidewalls has an edge farthest from the top surface of the substrate, the edge being parallel to the medium facing surface. The main pole has a first, a second, a third and a fourth side surface. The first side surface is opposed to the first sidewall. A portion of the second side surface is opposed to the second sidewall. The third side surface is opposed to the third sidewall. A portion of the fourth side surface is opposed to the fourth sidewall. | 02-25-2016 |
Patent application number | Description | Published |
20090131664 | Method for Producing 4(3H)-Quinazolinone Derivative - This invention is related to a method for producing 3-{4-[3-(1-pyrrolidinyl)propoxy]phenyl}-5-trifluoromethyl-4(3H)-quinazolinone comprising a step for reacting 2-methyl-5-trifluoromethyl-4H-3,1-benzoxazin-4-one with 4-[3-(1-pyrrolidinyl)propoxy]aniline or an acid-addition salt thereof, or 4-(1-cyclobutyl-4-piperidinoy9oxyaniline or acid addition salt thereof in the presence of an acid catalyst. | 05-21-2009 |
20090247770 | PROCESS FOR MAKING LACTAM TACHYKININ RECEPTOR ANTAGONISTS - The present invention is directed to a process for preparing α,α disubstituted γ-lactam derivatives of formula (I) that are useful as neurokinin-1 (NK-1) receptor antagonists, and inhibitors of tachykinin and in particular substance P. The compounds are useful in the treatment of certain disorders, including emesis, urinary incontinence, depression, and anxiety. | 10-01-2009 |
20140242645 | PROCESS FOR MAKING BETA 3 AGONISTS AND INTERMEDIATES - The present invention is directed to a process for preparing a compound of formula I-11 through multiple-step reactions. | 08-28-2014 |
20140243519 | METHODS AND INTERMEDIATES FOR PREPARING MACROLACTAMS - The present invention includes compounds useful as intermediates in the preparation of macrolactams, methods for preparing the intermediates, and methods for preparing macrolactams. One use of the methods and intermediates described herein is in the production of macrolactam compounds able to inhibit HCV NS3 protease activity. HCV NS3 inhibitory compounds have therapeutic and research applica | 08-28-2014 |
20150031891 | BIS-QUARTERNARY CINCHONA ALKALOID SALTS AS ASYMMETRIC PHASE TRANSFER CATALYSTS - The invention is directed to novel bis-quarternary cinchona alkaloid salts and the use of bis-quarternary cinchona alkaloid salts in asymmetric phase transfer catalysis. The present invention is directed to novel bis-quarternary cinchona alkaloid salts and the use of bis-quarternary cinchona alkaloid salts in asymmetric phase transfer catalysis. On certain substrates and under specific reaction conditions, the inventors have discovered that the use of bis-quarternary cinchona alkaloid salts in asymmetric phase transfer catalysis surprisingly provides for a more active and efficient process as compared to mono-quarternary catalysts. | 01-29-2015 |
20150038707 | PROCESS FOR MAKING CGRP RECEPTOR ANTAGONISTS - Methods for preventing pest infestations are disclosed. In some embodiments, the methods for preventing infestations involve use of pyrethroid insecticides or the stereoisomers or salts thereof. | 02-05-2015 |
20150087832 | PROCESS FOR MAKING BETA 3 AGONISTS AND INTERMEDIATES - The present invention is directed to processes for preparing beta 3 agonists of Formula (I) and Formula (II) and their intermediates. The beta 3 agonists are useful in the treatment of certain disorders, including overactive bladder, urinary incontinence, and urinary urgency. | 03-26-2015 |
20160122350 | PROCESS FOR THE PREPARATION OF CHIRAL TERT-BUTYL 4-((1R,2S,5R)-6-(BENZYLOXY)-7-OXO-1,6-DIAZABICYCLO[3.2.1]OCTANE-2-CARBOXA- MIDO)PIPERIDINE-1-CARBOXYLATE DERIVATIVES AND (2S,5R)-7-OXO-N-PIPERIDIN-4-YL-6-(SULFOXY)-1,6-DIAZABICYCLO[3.2.1]OCTANE-- 2-CARBOXAMIDE - A process for the preparation of N-protected 6-(piperidin-4-ylcarbamoyl)piperidin-3-yl sulfonates of Formula (III): which comprises contacting a lactone of Formula (II): with an azacycloalkylamine of formula (II-Am): followed by contact with a sulfonyl halide of formula (II-Su): R | 05-05-2016 |
Patent application number | Description | Published |
20140191182 | Memory Cells - Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state. | 07-10-2014 |
20140306172 | INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MANUFACTURE THEREOF - An integrated circuit system, and a method of manufacture thereof, including: an integrated circuit die having an address switch; a bottom electrode contact, free of halogen constituents, characteristic of a chemical vapor deposition or an atomic layer deposition, and coupled to the address switch; a transition material layer directly on the bottom electrode contact; and a top electrode contact, directly on the transition material layer, for forming a non-volatile memory array on the integrated circuit die. | 10-16-2014 |
20150041746 | NON-VOLATILE MEMORY SYSTEM WITH RELIABILITY ENHANCEMENT MECHANISM AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of a non-volatile memory system comprising: forming a dielectric layer having a hole; depositing a first electrode in the hole of the dielectric layer; applying an ion source layer over the first electrode; and depositing a second electrode over the ion source layer including: depositing an interface layer on the ion source layer, and applying a cap layer on the interface layer. | 02-12-2015 |
20150123065 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells. | 05-07-2015 |
20150140776 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state. | 05-21-2015 |
20160093803 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells. | 03-31-2016 |