Yan-Ru
Yan-Ru Chen, Hsinchu City TW
Patent application number | Description | Published |
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20110317471 | Nonvolatile stacked nand memory - A memory cell is arranged to enhance the electrical field of the memory element. The memory cell has a metal-oxide memory element, a nonconductive element, and a conductive element. The metal-oxide memory element is in a current path between a first electrode at a first voltage and a second electrode at a second voltage. The nonconductive element is adjacent to the metal-oxide memory element. | 12-29-2011 |
20120188813 | VERIFICATION ALGORITHM FOR METAL-OXIDE RESISTIVE MEMORY - Memory devices and methods for operating such devices are described which can effectively program the metal-oxide memory elements in an array, while also avoiding applying unnecessarily high voltage pulses. Programming operations described herein include applying a lower voltage pulse across a metal-oxide memory element to establish a desired resistance state, and only applying a higher voltage pulse when the lower voltage pulse is insufficient to program the memory element. In doing so, issues associated with applying unnecessarily high voltages across the memory element can be avoided. | 07-26-2012 |
20130075920 | Multilayer Connection Structure and Making Method - An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers. | 03-28-2013 |
20140140131 | THREE DIMENSIONAL GATE STRUCTURES WITH HORIZONTAL EXTENSIONS - A device on an integrated circuit includes a stack of alternating semiconductor lines and insulating lines, and a gate structure over the stack of semiconductor lines. The gate structure includes a vertical portion adjacent the stack on the at least one side, and horizontal extension portions between the semiconductor lines. Sides of the insulating lines can be recessed relative to sides of the semiconductor lines, so at least one side of the stack includes recesses between semiconductor lines. The horizontal extension portions can be in the recesses. The horizontal extension portions have inside surfaces adjacent the sides of the insulating lines, and outside surfaces that can be flush with the sides of the semiconductor lines. The device may include a second gate structure spaced away from the first mentioned gate structure, and an insulating element between horizontal extension portions of the second gate structure and the first mentioned gate structure. | 05-22-2014 |
Yan-Ru Chen, New Taipei City TW
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20120208091 | Polymer-Based Solid Electrolytes and Preparation Methods Thereof - Polymer-based solid electrolytes and preparation methods thereof are provided. The polymer-based solid electrolyte comprises a polymer, an electrolyte, and a solvent. The polymer of the solid electrolyte can be polyvinyl alcohol (PVA) or sulfonated polyetheretherketone (SPEEK). The electrolyte is a lithium salt. | 08-16-2012 |
20120304599 | Flexible Supercapacitor and Preparation Method Thereof - A flexible supercapacitor and a preparation method thereof are provided. The flexible supercapacitor includes a polymer-based solid electrolyte layer, two active layers respectively disposed on opposite surfaces of the polymer-based solid electrolyte layer, and two electron conducting layers disposed on outer exposed surfaces of the two active layers. | 12-06-2012 |
20120308899 | Polymer-Based Solid Electrolytes and Preparation Methods Thereof - SPEEK solid electrolytes and preparation methods thereof are provided. The SPEEK solid electrolyte comprises sulfonated polyetheretherketone (SPEEK), an electrolyte, and a solvent. The electrolyte is a lithium salt. | 12-06-2012 |
Yan-Ru Lin, Taichung City TW
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20090004834 | SUBSTRATES AND METHODS FOR FABRICATING THE SAME - An embodiment of the invention provides a substrate. The substrate comprises a single crystal substrate. An epitaxial buffer film is on the single crystal substrate. An epitaxial ZnGa | 01-01-2009 |
Yan-Ru Pan, Chungli Industrial Zone TW
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20110018443 | PLASMA GENERATING APPARATUS - A plasma generating apparatus includes a chamber, a slow wave antenna and an electromagnetic wave generator. The chamber has an accommodating space. The slow wave antenna has a central conductive tube passing through the accommodating space, and a dielectric tube arranged around the central tube. The electromagnetic wave generator is used for coupling electromagnetic wave into the slow wave antenna. An electromagnetic wave transmitted by the electromagnetic wave generator can pass through the slow wave antenna and radiate into the accommodating space. | 01-27-2011 |
Yan-Ru Pan, Taoyuan Hsien TW
Patent application number | Description | Published |
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20080272700 | PLASMA GENERATING DEVICE - In the present invention, a plasma generating device is provided for generating a plasma with a uniform intensity. The plasma generating device comprises at least a first antenna to transmit the first electromagnetic wave, at least a second antenna to transmit the second electromagnetic wave, and an insulator defining an isolated space for containing therein the first antenna and the second antenna, wherein the first antenna has an opposite orientation with respect to the second antenna, so that the first electromagnetic wave and the second electromagnetic wave are transmitted in opposite directions. The first and the second electromagnetic waves can be coupled with each other to produce a uniform standing wave pattern. Consequently, a large size uniform plasma can be generated. | 11-06-2008 |