Patent application number | Description | Published |
20150054769 | DRIVING DEVICE, ELECTRONIC DEVICE, AND DRIVE CONTROL PROGRAM - A driving device includes a storage unit configured to store waveform data of driving signals for stopping excitation of an actuator at a sinusoidal wave of a resonance frequency of the actuator, at portions other than a center point of an amplitude of the sinusoidal wave; and a processor programmed to execute a process including reading the waveform data stored in the storage unit and outputting, to the actuator, the driving signals corresponding to the waveform data that has been read. | 02-26-2015 |
20150054770 | DRIVING DEVICE, ELECTRONIC DEVICE, AND DRIVE CONTROL PROGRAM - A driving device includes a storage unit configured to store waveform data of driving signals of a sinusoidal wave satisfying a frequency f1=m/n×f0 (m, n are natural numbers and m≠n) where a resonance frequency of an actuator is f0, wherein the driving signals excite the actuator for an m number of times; and a processor programmed to execute a process including reading the waveform data stored in the storage unit and outputting, to the actuator, the driving signals corresponding to the waveform data that has been read. | 02-26-2015 |
20150054808 | DRIVING DEVICE, ELECTRONIC DEVICE, AND DRIVE CONTROL PROGRAM - A driving device includes a storage unit configured to store waveform data of driving signals whose phase is shifted by π/2 from a sinusoidal wave satisfying a frequency f1=m/n×f0 (m, n are natural numbers, and m≠n) where a resonance frequency of. an actuator is f0, wherein the; driving signals excite the actuator for an m number of times and stop exciting the actuator at a point other than a center point of amplitude; and a processor programmed to execute a process including reading the waveform data stored in the storage unit and outputting, to the actuator, the driving signals corresponding to the waveform data that has been read. | 02-26-2015 |
20160103491 | DRIVE CONTROL APPARATUS, ELECTRONIC APPARATUS, AND CONTROL METHOD - A drive control apparatus includes a storage configured to store waveform data representing a drive signal constituted of a sine wave satisfying a frequency f | 04-14-2016 |
20160103493 | DRIVE CONTROL APPARATUS, ELECTRONIC APPARATUS, AND CONTROL METHOD - A drive control apparatus includes a storage storing first or second waveform data representing a drive signal, and a drive controller reading the first or the second waveform data, and output the drive signal to the actuator. The first waveform data applying vibration m×Q times (Q is a natural number other than 0) and obtained by multiplying a sine wave (f1=(m/n)×f0 (m and n are mutually different natural numbers other than 0)) by a damping ratio of a vibration system to an actuator, and the second waveform data applying a vibration (m/2)×Q times (Q is a natural number other than 0) and obtained by multiplying a sine wave (a frequency f1=(m/n)×f0 (m and n are mutually different positive odd numbers)) by the damping ratio to the actuator, where f0 represents a resonant frequency of the actuator. | 04-14-2016 |
Patent application number | Description | Published |
20150249025 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate | 09-03-2015 |
20150255314 | STORING CONTAINER, STORING CONTAINER MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop. | 09-10-2015 |
20150294867 | SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE - The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained. | 10-15-2015 |