Patent application number | Description | Published |
20080237686 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a control gate electrode having a first layer of polycrystalline silicon. The first layer is formed by decreasing a thickness of a first film of doped polycrystalline silicon. The first layer retains a dopant activation ratio of the first film. A method for manufacturing a semiconductor device, includes: forming a first film of doped polycrystalline silicon; and decreasing a thickness of the first film. The first film is formed by heat treating an amorphous silicon film provided on an insulating film. | 10-02-2008 |
20080244481 | METHOD FOR DESIGNING AND MANUFACTURING SEMICONDUCTOR DEVICE AND SOFTWARE THEREFOR - A method for designing a semiconductor device including a semiconductor substrate and an interconnect on the semiconductor substrate, with X-direction being one direction parallel to the semiconductor substrate, Y-direction being a direction parallel to the semiconductor substrate and perpendicular to the X-direction, and Z-direction being perpendicular to the semiconductor substrate, the method includes: determining a cross-sectional configuration in the X-Z direction; three-dimensionalizing the cross-sectional configuration with a range in the Y-direction being specified; and using the three-dimensionalized configuration as a model. | 10-02-2008 |
20120056156 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor. | 03-08-2012 |
20120181504 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion. | 07-19-2012 |
20120211724 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting layer includes at least one quantum well, and the quantum well adjacent to the p-type semiconductor layer includes a first barrier layer and a second barrier layer, the first barrier layer nearer to the p-type semiconductor layer being doped with p-type impurity. | 08-23-2012 |
20130069035 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, and an electron blocking layer. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a nitride semiconductor. The electron blocking layer is provided between the light emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing from the light emitting layer toward the p-type semiconductor layer. | 03-21-2013 |
20130153850 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, and a memory cell provided between the first electrode and the second electrode. The memory cell includes a retention unit, a resistance change unit, and an ion supply unit. The retention unit is provided on the first electrode and has an electron trap. The resistance change unit is provided on the retention unit. The ion supply unit is provided between the resistance change unit and the second electrode and includes a metal element. | 06-20-2013 |
20130195136 | SEMICONDUCTOR LASER - A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer. | 08-01-2013 |
20140241389 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion. | 08-28-2014 |
20140241390 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion. | 08-28-2014 |
Patent application number | Description | Published |
20100182551 | Anti-Glare Film - The present invention provides an anti-glare film which has not only <1> sufficient anti-reflection property but also <2> a high level of contrast and <3> strong anti-glare properties and can be applied on a surface of various display devices such as a note PC, a desktop PC and a TV monitor. The anti-glare film of the present invention includes an anti-glare layer which has concavities and convexities on the surface, a haze according to JIS-7105-1981 in the range of 1.0-5.0%, and an average interval between concavities and convexities on the anti-glare layer surface Sm according to JIS-B0601-1994 in the range of 10-150 μm. | 07-22-2010 |
20100238384 | Anti-Glare Film, Polarizing Plate and Transmission Type LCD - The present invention provides an anti-glare film which has <1> sufficient anti-reflection properties, <2> a high level of contrast and <3> strong antifouling properties. A surface of an anti-glare layer of the anti-glare film of the present invention has a concave-convex structure, an arithmetic mean roughness (Ra) according to JIS B0601-1994 in the range of 0.02-0.2 μm when a cut-off wavelength (λc) is 0.8 mm, and a surface free energy in the range of 15-25 mN/m. In addition, a haze of the anti-glare layer of the anti-glare film of the present invention is in the range of 1.0-5.0%. | 09-23-2010 |
20140022639 | ANTIREFLECTION FILM AND POLARIZING PLATE - An antireflection film is provided which includes stacking in order a transparent base material, a first layer, and a second layer whose refractive index is lower than the refractive index of the first layer. The first layer is formed by curing a coating film containing an ionizing radiation curing material, a quaternary ammonium salt material, and a leveling material. | 01-23-2014 |