Patent application number | Description | Published |
20090294916 | BONDING METHOD FOR THROUGH-SILICON-VIA BASED 3D WAFER STACKING - There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bondng is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief. | 12-03-2009 |
20100246141 | ELECTRONIC PACKAGE AND METHOD OF FABRICATION THEREOF - One aspect of the present invention provides an electronic package, comprising at least a first module and a second module arranged on top of the first module, the modules together in the form of a module stack, wherein the first and second modules are adhesively connected together, each module includes a substrate layer having at least one metal layer, at least one die and a plastic(s) package molding compound layer molded over said die or dice, in each module the die or dice are bonded on said substrate layer via the metal layer, a plurality of channels formed generally vertically acting as vias to connect the metal layers and arranged adjacent to the die or dice in at least one of the modules, some or all the channels provided with an inner surface coated with a conductive material layer or filled with a conductive material for electrical connection whereby the dice are electrically connected together, and means serving as an intermediary for providing electrical, mechanical and thermal connectivity, communication externally and connected to the channels. | 09-30-2010 |
20110221018 | Electronic Device Package and Methods of Manufacturing an Electronic Device Package - An electronic device package comprises a substrate | 09-15-2011 |
20110235299 | Stacked Electronic Components, Method and Apparatus for Aligning Electronic Components - A method of aligning electronic components comprising providing a positioning member | 09-29-2011 |
20120187462 | HIGH OPTICAL EFFICIENCY CMOS IMAGE SENSOR - High optical efficiency CMOS image sensors capable of sustaining pixel sizes less than 1.2 microns are provided. Due to high photodiode fill factors and efficient optical isolation, microlenses are unnecessary. Each sensor includes plural imaging pixels having a photodiode structure on a semiconductor substrate adjacent a light-incident upper surface of the image sensor. An optical isolation grid surrounds each photodiode structure and defines the pixel boundary. The optical isolation grid extends to a depth of at least the thickness of the photodiode structure and prevents incident light from penetrating through the incident pixel to an adjacent pixel. A positive diffusion plug vertically extends through a portion of the photodiode structure. A negative diffusion plug vertically extends into the semiconductor substrate for transferring charge generated in the photodiode to a charge collecting region within the semiconductor substrate. Pixel circuitry positioned beneath the photodiode controls charge transfer to image readout circuitry. | 07-26-2012 |
20130187267 | INCREASED SURFACE AREA ELECTRICAL CONTACTS FOR MICROELECTRONIC PACKAGES - A multilayer microelectronic device package includes one or more vertical electrical contacts. At least one semiconductor material layer is provided having one or more electrical devices fabricated therein. An electrical contact pad can be formed on or in the semiconductor material layer. Another material layer is positioned adjacent to the semiconductor material layer and includes a conductive material stud embedded in or bonded to the layer. A via is formed through at least a portion of the semiconductor material layer and the electrical contact pad and into the adjacent layer conducting material stud. The via is constructed such that the via tip terminates within the conducting material stud, exposing the conducting material. A metallization layer is disposed in the via such that the metallization layer contacts both the electrical contact pad and the conducting material stud exposed by the via tip. | 07-25-2013 |
20140343901 | Method for Optimizing Electrodeposition Process of a Plurality of Vias in Wafer - The presently claimed invention provides a method for optimizing an electrodeposition process of a plurality of vias in a wafer. Instead of simulating a large number of via on the wafer for via filling, a representative via is selected with the maximum value of critical factor, which is a function of process parameters. The filling of the representative via is simulated with different sampling points to find out the filling goodness in order to find out the optimized process windows of process parameters. An optimizer is also disclosed, which either provides sampling points or reduces sampling points under artificial neural network method. Calculation of filling goodness is used for evaluating via filling quality and further comparing among via fillings simulated at different sampling points. Consequently, the method of present invention is able to shorten the simulation time for via filling as well as provide a process window with high accuracy. | 11-20-2014 |
20150016078 | Partitioned Hybrid Substrate for Radio Frequency Applications - The presently claimed invention is to provide a package for compact RF signal system, and a method to form the package thereof in order to miniaturize the size of package, improve signal integrity, and reduce manufacturing cost. The package comprises a hybrid substrate with a sandwiched structure, in which the hybrid substrate comprises an upper layer and a lower layer with different dielectric properties being separated by an interposer for improving electrical isolation and mechanical stiffness. Metal layers are formed on the sidewalls of the opening to surround an active component, such that the metal sidewalls together with two ground plates in the upper and lower layers constitute a self-shielding enclosure inside the package to protect the active component. | 01-15-2015 |