Xu, Fremont
Dong Xu, Fremont, CA US
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20140261654 | FREE-STANDING METALLIC ARTICLE FOR SEMICONDUCTORS - A free-standing metallic article, and method of making, is disclosed in which the metallic article is electroformed on an electrically conductive mandrel. The mandrel has an outer surface with a preformed pattern, wherein at least a portion of the metallic article is formed in the preformed pattern. The metallic article is separated from the electrically conductive mandrel, which forms a free-standing metallic article that may be coupled with the surface of a semiconductor material for a photovoltaic cell. | 09-18-2014 |
20140261659 | Free-Standing Metallic Article for Semiconductors - A free-standing metallic article, and method of making, is disclosed in which the metallic article is electroformed on an electrically conductive mandrel. The mandrel has an outer surface with a preformed pattern, wherein at least a portion of the metallic article is formed in the preformed pattern. The metallic article is separated from the electrically conductive mandrel, which forms a free-standing metallic article that may be coupled with the surface of a semiconductor material for a photovoltaic cell. | 09-18-2014 |
20140261661 | FREE-STANDING METALLIC ARTICLE WITH OVERPLATING - A free-standing metallic article, and method of making, is disclosed in which the metallic article is electroformed on an electrically conductive mandrel. The mandrel has an outer surface layer having a preformed pattern. The outer surface layer has a dielectric region and an exposed metal region. The metallic article has a plurality of electroformed elements that are formed on the exposed metal region of the outer surface layer of the electrically conductive mandrel. A first electroformed element has an overplated portion formed above the outer surface layer of the mandrel. The metallic article is configured to serve as an electrical conduit for a photovoltaic cell, and forms a unitary, free-standing piece when separated from the electrically conductive mandrel. | 09-18-2014 |
20140262793 | ADAPTABLE FREE-STANDING METALLIC ARTICLE FOR SEMICONDUCTORS - A free-standing metallic article, and method of making, is disclosed in which the metallic article is electroformed on an electrically conductive mandrel. The metallic article has a plurality of electroformed elements that are configured to serve as an electrical conduit for a photovoltaic cell. A first electroformed element has at least one of: a) a non-uniform width along a first length of the first element, b) a change in conduit direction along the first length of the first element, c) an expansion segment along the first length of the first element, d) a first width that is different from a second width of a second element in the plurality of electroformed elements, e) a first height that is different from a second height of the second element in the plurality of electroformed elements, and f) a top surface that is textured. | 09-18-2014 |
Feiyue Xu, Fremont, CA US
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20150162102 | Method and System for Reliable Big Capacity Storage System Protected by Triple Protection - The method delivers a storage system for Big Data usage. The system contains a matrix of unreliable physical data devices and data in this reliable big capacity storage system is protected by the triple protection so the method and system can protect storage system from more than 2 fault data devices. In some cases, the system can still deliver data when system has many failed data devices at the same. Floating Parity technology can also avoid heavily writing data to some device surfaces, due to parity update, which cause data device to be failed before expected device life time. | 06-11-2015 |
Junyi Xu, Fremont, CA US
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20090096514 | METHOD AND APPARATUS FOR PROVIDING CANCELLATION OF HARMONICS SIGNALS WITH MODULATED SIGNALS FOR MULTI-CHANNELS - A device and method for canceling or attenuating harmonics noise without distorting the incoming signal. An exemplary device includes the use of an estimation loop to generate an artificial signal to eliminate or attenuate the influence of harmonics. The estimation loop includes a mixer adapted to produce a mixed signal by processing or combining the incoming signal and the artificial signal. The estimation loop includes an error detector, a low-pass filter, a parameter estimator, and a numerically controlled oscillator. The parameter estimator produces information relating to the phase, frequency, and amplitude of an incoming harmonics spur and will be used by the numerically controlled oscillator to generate the artificial signal. If the mixed signal contains relatively low levels of harmonics residuals, the mixed signal is produced at the output in lieu of the incoming signal. | 04-16-2009 |
20110113305 | HIGH THROUGHPUT INTERLEAVER / DEINTERLEAVER - Systems and methods for performing high-speed multi-channel forward error correction using external DDR SDRAM is provided. According to one exemplary aspect, an interleaver/deinterleaver performs both read and write accesses to the DDR SDRAM that are burst-oriented by hiding active and precharge cycles in order to achieve high data rate operations. The interleaver/deinterleaver accesses data in the DDR SDRAM as read blocks and write blocks. Each block includes two data sequences. Each data sequence further includes a predetermined number of data words to be interleaved/deinterleaved. The PRECHARGE and ACTIVE command for one data sequence is issued when a preceding data sequence is being processed. Data in one read/write data sequence has the same row address within the same bank of the DDR SDRAM. | 05-12-2011 |
20130156117 | Multi-Reference Clock Synchronization Techniques - Efficient synchronization techniques that support multiple reference clocks in an EQAM device. Consider a plurality of different modulators in the EQAM device receiving data from a corresponding plurality of different sources having corresponding different timing references (i.e., different source reference clocks). To accommodate this, the modulators all operate using a common system clock, and each modulator is provided with a phase synchronizer. The phase synchronizer synchronizes the modulated symbol phases to the corresponding reference clock. | 06-20-2013 |
20130212328 | High Throughput Interleaver/De-Interleaver - Systems and methods for performing high-speed multi-channel forward error correction using external DDR SDRAM is provided. According to one exemplary aspect, an interleaver/deinterleaver performs both read and write accesses to the DDR SDRAM that are burst-oriented by hiding active and precharge cycles in order to achieve high data rate operations. The interleaver/deinterleaver accesses data in the DDR SDRAM as read blocks and write blocks. Each block includes two data sequences. Each data sequence further includes a predetermined number of data words to be interleaved/deinterleaved. The PRECHARGE and ACTIVE command for one data sequence is issued when a preceding data sequence is being processed. Data in one read/write data sequence has the same row address within the same bank of the DDR SDRAM. | 08-15-2013 |
Lingyun Xu, Fremont, CA US
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20140275073 | METHODS OF TREATING CANCER SENSITIVE TO ANTI-EGFR THERAPY AND MODIFYING TREATMENT USING BLOOD BIOMARKERS - The present disclosure provides methods of treating cancer and modifying a cancer treatment for a cancer with an anti-EGFR drug by creating PRDX6 expression profiles and using the profiles to evaluate and optionally modify treatment. The present disclosure also provides assays and systems for assessing sensitivity of a cancer to an anti-EGFR therapy. | 09-18-2014 |
Robert Xu, Fremont, CA US
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20090200578 | SELF-REPAIRING FIELD EFFECT TRANSISITOR - A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell. | 08-13-2009 |
20100019316 | Method of fabricating super trench MOSFET including buried source electrode - A method of fabricating a trench MOSFET, the lower portion of the trench containing a buried source electrode which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions. | 01-28-2010 |
20110049682 | SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECTION SEALS - Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column. | 03-03-2011 |
20110101525 | SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS - A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated. | 05-05-2011 |
20120068178 | TRENCH POLYSILICON DIODE - Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench. | 03-22-2012 |
Robert Q. Xu, Fremont, CA US
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20110089486 | SUPER-HIGH DENSITY TRENCH MOSFET - A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches. | 04-21-2011 |
20140077287 | BREAKDOWN VOLTAGE BLOCKING DEVICE - In one embodiment, a breakdown voltage blocking device can include an epitaxial region located above a substrate and a plurality of source trenches formed in the epitaxial region. Each source trench can include a dielectric layer surrounding a conductive region. The breakdown voltage blocking device can also include a contact region located in an upper surface of the epitaxial region along with a gate trench formed in the epitaxial region. The gate trench can include a dielectric layer that lines the sidewalls and bottom of the gate trench and a conductive region located between the dielectric layer. The breakdown voltage blocking device can include source metal located above the plurality of source trenches and the contact region. The breakdown voltage blocking device can include gate metal located above the gate trench. | 03-20-2014 |
Songlin Xu, Fremont, CA US
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20090011615 | Advanced Processing Technique and System for Preserving Tungsten in a Device Structure - Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss. | 01-08-2009 |
20090206056 | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers - A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations. | 08-20-2009 |
Weiwen Xu, Fremont, CA US
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20140024143 | SYSTEM FOR IN-SITU FILM STACK MEASUREMENT DURING ETCHING AND ETCH CONTROL METHOD - Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures. | 01-23-2014 |
Xiaode Xu, Fremont, CA US
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20090052458 | Flow state attributes for producing media flow statistics at a network node - A method in one embodiment includes allocating, by a node of a network, a flow label attribute identifying a media flow associated with a Session Description Protocol (SDP) media session. The media flow is between a sender and receiver nodes over a media transmission path of the network. The node further specifying a flow state attribute to generate media flow information and communicating the flow label and the flow state attribute to downstream nodes in the media transmission path. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. | 02-26-2009 |
20090059908 | Routing protocol with packet network attributes for improved route selection - A node for routing of calls in a network has an interface coupled to the network and at least one processor operable to route a packet-based call to a telephony destination in accordance with a protocol that includes a set of attributes that describe packet-network routing characteristics of one or more Internet Protocol (IP)-IP gateway devices in the network. The attributes are used by the at least one processor to specify a call route through an IP-IP gateway device for the packet-based call. The set of attributes include a first attribute that identifies a total administratively provisioned bandwidth capacity available on a given call route to accommodate application traffic, and a second attribute that identifies a current bandwidth that is available on the given call route to accommodate the application traffic at a given point in time. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b). | 03-05-2009 |
Xiaofeng Xu, Fremont, CA US
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20080278927 | Color tunable light source - A color tunable light source comprises: a first light emitting diode (LED) arrangement operable to emit light of a first color and a second LED arrangement operable to emit light of a second color, the combined light output comprising the output of the source. One or both LED arrangements comprises a phosphor provided remote to an associated LED operable to generate excitation energy of a selected wavelength range and to irradiate the phosphor such that it emits light of a different color wherein light emitted by the LED arrangement comprises the combined light from the LED and phosphor and control means operable to control the color by controlling the relative light outputs of the two LED arrangements. The color can be controlled by controlling the relative magnitude of the drive currents of the LEDs or by controlling a duty cycle of PWM drive current. | 11-13-2008 |
20100052560 | COLOR TUNABLE LIGHT SOURCE - A color tunable light source comprising: a first LED arrangement operable to emit light of a first color and a second LED arrangement operable to emit light of a second color, the LED arrangements being configured such that their combined light comprises the output of the source and control means operable to control the color of light emitted by the source by controlling the relative light outputs of the two LED arrangements wherein the control means is operable to dynamically switch the outputs of the LED arrangements and the color is tunable by controlling a duty cycle of the drive current. One or both LED arrangements can comprise at least one phosphor and an associated LED that is operable to irradiate the phosphor with excitation radiation of a first wavelength range such that the phosphor emits light of a different wavelength range. | 03-04-2010 |
20110204805 | COLOR TEMPERATURE TUNABLE WHITE LIGHT SOURCE - A color temperature tunable white light source comprises a first LED arrangement comprising at least one blue emitting LED configured to excite a remote phosphor and a second LED arrangement comprising at least one red emitting LED. The LED arrangements are configured such that the composite light emitted by the LED arrangements appears white in color. The relative drive currents of the LEDs is controllable, and thus variable in relative magnitude, such that the color temperature of the composite light emitted by the source is electrically tunable. | 08-25-2011 |
Xie Xu, Fremont, CA US
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20090104193 | SEMA4D in Cancer Diagnosis, Detection and Treatment - This invention is in the field of cancer-related genes. Specifically it relates to methods for detecting cancer or the likelihood of developing cancer based on the presence or absence of the SEM A4D gene or proteins encoded by this gene. The invention also provides methods and molecules for upregulating or downregulating the SEMA4D gene. | 04-23-2009 |
Xiofeng Xu, Fremont, CA US
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20080252197 | Color temperature tunable white light source - A color temperature tunable white light source comprises: first and second LED arrangements operable to emit light of first and second wavelength range respectively that are configured such that their combined light output, which comprises light generated by the source, appears white in color. One or both LED arrangements comprises a phosphor provided remote to an associated LED operable to generate excitation radiation and to irradiate the phosphor such that it emits light of a different wavelength range, wherein the light emitted by the LED arrangement comprises the combined light from the LED and phosphor. The color temperature of output white light is tunable by controlling the relative light outputs of the LED arrangements by for example controlling the relative magnitude of the drive currents of the LEDs or a duty cycle of a pulse width modulated drive current. | 10-16-2008 |
Xuejun Xu, Fremont, CA US
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20130055408 | Techniques for defining, using and manipulating rights management data structures - A descriptive data structure provides an abstract representation of a rights management data structure such as a secure container. The abstract representation may describe, for example, the layout of the rights management data structure. It can also provide metadata describing or defining other characteristics of rights management data structure use and/or processing. For example, the descriptive data structure can provide integrity constraints that provide a way to state rules about associated information. The abstract representation can be used to create rights management data structures that are interoperable and compatible with one another. This arrangement preserves flexibility and ease of use without compromising security. | 02-28-2013 |
Yue Xu, Fremont, CA US
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20090018324 | LABELED NUCLEOTIDE ANALOGS AND USES THEREFOR - Labeled nucleotide analogs used in place of naturally occurring nucleoside triphosphates or other analogs in template directed nucleic acid synthesis reactions and other nucleic acid reactions, and various analyses based thereon, including DNA sequencing, single base identification, hybridization assays and others. | 01-15-2009 |
20110059450 | LABELED NUCLEOTIDE ANALOGS AND USES THEREFOR - Labeled nucleotide analogs used in place of naturally occurring nucleoside triphosphates or other analogs in template directed nucleic acid synthesis reactions and other nucleic acid reactions, and various analyses based thereon, including DNA sequencing, single base identification, hybridization assays and others. | 03-10-2011 |
20120302459 | Articles Having Localized Molecules Disposed Thereon and Methods of Producing Same - Methods of producing substrates having selected active chemical regions by employing elements of the substrates in assisting the localization of active chemical groups in desired regions of the substrate. The methods may include optical, chemical and/or mechanical processes for the deposition, removal, activation and/or deactivation of chemical groups in selected regions of the substrate to provide selective active regions of the substrate. | 11-29-2012 |
20140315756 | Articles Having Localized Molecules Disposed Thereon and Methods of Producing Same - Methods of producing substrates having selected active chemical regions by employing elements of the substrates in assisting the localization of active chemical groups in desired regions of the substrate. The methods may include optical, chemical and/or mechanical processes for the deposition, removal, activation and/or deactivation of chemical groups in selected regions of the substrate to provide selective active regions of the substrate. | 10-23-2014 |