Patent application number | Description | Published |
20110254057 | NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF THE SAME - Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer. | 10-20-2011 |
20120007049 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers. | 01-12-2012 |
20120007053 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer. | 01-12-2012 |
20120267637 | Nitride semiconductor device and manufacturing method thereof - Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a floating guard ring in Schottky contact with the nitride semiconductor layer between the drain electrode and the source electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode wherein the dielectric layer is applied to the floating guard ring between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. | 10-25-2012 |
20120267639 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a nitride semiconductor device and a method for manufacturing the same. According to an exemplary embodiment, there is provided a nitride semiconductor device, including: a nitride semiconductor layer having a 2DEG channel; a drain electrode ohmic-contacted with the nitride semiconductor layer; a source electrode Schottky-contacted with the nitride semiconductor layer, including a plurality of patterned protrusion portions protruded to the drain electrode direction, and including an ohmic pattern ohmic-contacted with the nitride semiconductor layer therein; a dielectric layer disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode including the patterned protrusion portions; and a gate electrode disposed on the dielectric, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode. | 10-25-2012 |
20120267642 | Nitride semicondutor device and manufacturing method thereof - Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. | 10-25-2012 |
20120267686 | Nitride semiconductor device and manufacturing method thereof - Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. | 10-25-2012 |
20120267687 | Nitride semiconductor device and manufacturing method thereof - Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode, wherein the dielectric layer has a recess formed between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer and in the recess to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof. | 10-25-2012 |
20130009165 | NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR POWER DEVICE - Disclosed herein are a nitride semiconductor device, a method for manufacturing the same, and a nitride semiconductor power device. According to an exemplary embodiment of the present invention, a nitride semiconductor device includes: a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas (2DEG) channel formed therein; a D-mode FET that includes a gate electrode Schottky-contacting with the nitride semiconductor layer to form a normally-on operating depletion-mode (D-mode) HEMT structure; and a Schottky diode part that includes an anode electrode Schottky-contacting with the nitride semiconductor layer and increases a gate driving voltage of the D-mode FET, the anode electrode being connected to the gate electrode of the D-mode FET. In addition, the nitride semiconductor power device and the method for manufacturing a nitride semiconductor device are proposed. | 01-10-2013 |
20130082276 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers is provided. Further, a method of manufacturing a nitride semiconductor device is provided. | 04-04-2013 |
20130082277 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided. | 04-04-2013 |
Patent application number | Description | Published |
20080253409 | Multi-Channel Bio-Chip Scanner - There is provided a multi-channel bio-chip scanner using two or more excitation wavelengths. The bio-chip scanner includes: a glass holder unit mounted with a bio-chip in which a target DNA pre-marked by a fluorescent material is hybridized with a probe DNA; a light source unit irradiating a laser beam onto the bio-chip; a transfer unit transferring the bio-chip from the glass holder unit; and a detection unit detecting and analyzing fluorescent light expressed by the bio-chip with irradiation of the laser beam, wherein the light source unit generates two or more laser beams having different wavelengths. | 10-16-2008 |
20080312094 | MUTATED AQP, METHOD FOR DETECTING CANCER USING THE SAME, DNA CHIP HAVING OLIGONUCLEOTIDES OF SAID MUTATED AQP SEQUENCE - The present invention relates to mutation genes of the AQP (aquaporin), a method for detecting cancer using mutations and expressions of the AQP and a DNA chip possessing oligonucleotides of mutated AQP base sequence. In case of the present method for detecting cancer and DNA chip using the AQP's mutations and expressions, it is highly accurate, rapid and effective in cancer diagnosis. | 12-18-2008 |
20110033842 | Skin Sampling Kit Which Stores Nucleic Acids In Stable Status, Genetic Test Methods By Using The Kit And Their Practical Application - The present invention relates to a new skin gene card for genetic test, a method for acquiring DNA and RNA and performing various genetic tests using the same, and practical applications thereof. More specifically, the inventors of the present invention have developed a skin gene card capable of acquiring samples from human skin, hair or mucosa simply, safely and quickly and enabling stable long-term storage and transport of DNA and RNA included in the acquired sample at room temperature. Various genetic tests may performed using the acquired DNA and RNA, including polymerase chain reaction (PCR), reverse transcription (RT)-PCR, real-time PCR, sequencing, hybridization, DNA chip analysis, single-nucleotide polymorphism (SNP) assay, gene mutation assay, promoter methylation assay, gene expression assay, etc. The genetic skin test result may be utilized for disease prognosis, nutrigenomic test, pharmacogenomic test, forensic test such as personal identification, diagnosis of genetic diseases, diagnosis of skin diseases, or the like. In addition, through an objective evaluation of the skin or hair condition, a personalized cosmetic and skin care system may be established for practical application in beauty care, cosmetology, dermatology, and clinical practice. | 02-10-2011 |
20130237427 | Y-SHAPED PROBE AND VARIANT THEREOF, AND DNA MICROARRAY, KIT AND GENETIC ANALYSIS METHOD USING THE SAME - The present disclosure relates to a Y-shaped nucleotide probe having two probe parts in one body, which provides improved sensitivity, specificity and accuracy in genotype and genetic analysis and thus is widely applicable to diagnosis and a variant thereof (d- or b-shaped probe), and a DNA microarray, a kit and a genetic analysis method using the same. The Y-shaped probe comprises a left-side probe part, a left-side stem part, a linker part, a right-side stem part and a right-side probe part. The DNA microarray of the present disclosure can improve accuracy of test by testing the same gene simultaneously or by testing two different target genes at once. Especially, since both the target gene and the control gene can be tested simultaneously from one spot, error can be reduced, quantitative analysis is possible and standardization is easy. The Y-shaped probe of the present disclosure may be widely used for genotyping, analysis of gene expression, analysis of mutation or SNP, diagnosis and prediction of diseases, determination of therapeutic regimen, or the like. | 09-12-2013 |
Patent application number | Description | Published |
20140351947 | METHOD OF GENERATING EXECUTION FILE FOR MOBILE DEVICE, METHOD OF EXECUTING APPLICATION OF MOBILE DEVICE, DEVICE TO GENERATE APPLICATION EXECUTION FILE, AND MOBILE DEVICE - A method of generating an application execution file for a mobile device is provided. The method according to an exemplary embodiment of the present invention includes encoding at least one class, which requires security, independently of other classes among a plurality of classes to execute an application, and generating the application execution file which includes the encoded at least one class and the other classes. | 11-27-2014 |
20150095653 | METHOD AND APPARATUS OF CREATING APPLICATION PACKAGE, METHOD AND APPARATUS OF EXECUTING APPLICATION PACKAGE, AND RECORDING MEDIUM STORING APPLICATION PACKAGE - A non-transitory computer readable recording medium has stored thereon an application package including at least one file, the application package including an executable file created by compiling a program code, a manifest file including a hash value of the at least one file included in the application package, a digest information file including a hash value of the manifest file, a certificate file including a hash value of the digest information file, the hash value of the digest information file being digitally signed using a private key, security information including a public key corresponding to the private key, the security information being encrypted using an encryption key, and a native library including an application programming interface (API) configured to execute the executable file. | 04-02-2015 |
Patent application number | Description | Published |
20140126013 | PRINTING CONTROL APPARATUS AND METHOD - A printing control apparatus includes a display unit to display a preview screen of a document to print, a control unit to extract objects included in the document displayed on the preview screen and individually set a printing option corresponding to an object selected by a user from among the extracted objects, and a printing data generation unit to generate printing data corresponding to the set printing option and to spool the printing data. | 05-08-2014 |
20150052480 | PRINTING CONTROL METHOD, AND APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM THEREOF - A printing control apparatus includes a user interface configured to receive a selection of a printing option to be applied to a document, and to display, in response to a favorite printing option being the selection of the printing option, information about a method for a preselected printing option, a printer driver configured to establish the printing option to be applied to the document according to the information about the method, and to generate printing data according to the printing option, and a communication interface configured to transmit the printing data to an image forming apparatus. | 02-19-2015 |
20150092233 | SYSTEM AND METHOD FOR PROVIDING CLOUD PRINTING SERVICE - Provided is an image forming system operable to provide a cloud printing service, the image forming system comprising: a transmitting device operable to transmit content by designating a target phone number; a cloud printing server operable to receive the target phone number and the content from the transmitting device; a receiving device assigned with the target phone number and operable to receive an upload notification of the content with respect to the target phone number from the cloud printing server; and an image forming device operable to print the content by receiving the content from the cloud printing server, wherein the cloud printing server transmits the content to the image forming device registered in the target phone number when the cloud printing service is requested for the content to the target phone number. | 04-02-2015 |