Patent application number | Description | Published |
20080268613 | Semiconductor Substrate And Method For Production Thereof - Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer. | 10-30-2008 |
20090084669 | PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL - A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt. | 04-02-2009 |
20100037815 | Method For Producing A Single Crystal Of Semiconductor Material - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 02-18-2010 |
20110084366 | Epitaxial Wafer and Production Method Thereof - The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: | 04-14-2011 |
20110095018 | Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules - A device for producing a silicon single crystal by remelting granules has a rotating plate of silicon having a central opening and having a silicon tubular extension which encloses the opening and extends below the plate; a first induction heating coil above the plate for melting granules; and a second induction heating coil below the plate for crystallizing the molten granules, wherein the second induction heating coil has, on its side lying opposite the silicon plate, a lower layer composed of a magnetically permeable material and an upper layer in which there is at least one cooling channel for conducting a coolant. | 04-28-2011 |
20110107960 | Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules - Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm. | 05-12-2011 |
20110126757 | Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant - Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate v | 06-02-2011 |
20110185963 | Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules - Silicon single crystals are prepared from molten granules, by | 08-04-2011 |
20120039786 | Silicon Wafer and Method For Producing It - Silicon wafers having an oxygen concentration of 5ยท10 | 02-16-2012 |
20130192518 | METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 08-01-2013 |