Patent application number | Description | Published |
20090071540 | COMBINED ETCHING AND DOPING MEDIA - The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed. | 03-19-2009 |
20100297801 | METHOD FOR PRODUCING ELECTRIC CONTACTS ON A SEMICONDUCTOR COMPONENT - Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T | 11-25-2010 |
20110165726 | METHOD AND ARRANGEMENT FOR PRODUCING A FUNCTIONAL LAYER ON A SEMICONDUCTOR COMPONENT - A method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, where the functional layer has a layer thickness d | 07-07-2011 |
20110183524 | METHOD FOR CHEMICALLY TREATING A SUBSTRATE - A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics. | 07-28-2011 |
20110201196 | METHOD FOR PRODUCING A METAL CONTACT ON A SEMICONDUCTOR SUBSTRATE PROVIDED WITH A COATING - A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate. | 08-18-2011 |
20110278702 | METHOD FOR PRODUCING A DOPANT PROFILE - A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile. | 11-17-2011 |
20140000698 | METHOD FOR PRODUCING ELECTRICALLY CONDUCTIVE CONTACTS ON SOLAR CELLS, AND SOLAR CELL | 01-02-2014 |
20150311356 | CRYSTALLINE SOLAR CELL AND METHOD FOR PRODUCING THE LATTER - A method for producing a crystalline solar cell having a p-doped silicon substrate with an n-doped region on the front side and also at least one antireflection layer is provided. The method includes uniformly applying a solution containing phosphoric acid to the entire front-side surface of the solar cell, forming phosphosilicate glass in a first thermal treatment step applied to the solar cell, and, in the first thermal treatment step or a subsequent thermal treatment step, forming silicon-containing precipitates near the surface with a homogeneous or substantially homogeneous surface coverage in a layer on the front-side surface of the substrate in the range of between 5% and 100%. | 10-29-2015 |