Wen-Fa
Wen-Fa Wang, Taichung City TW
Patent application number | Description | Published |
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20140183832 | COLLAPSIBLE PLATFORM TRUCK - A foldable platform truck includes a platform, two wheel-connecting bars rotatably attached to the platform, a handle assembly, a handle release and locking mechanism for controlling the handle assembly, a pair of first gear members and a pair of second gear members. The handle release and locking mechanism has an actuator to be operated to allow the handle assembly to pivot between an upright position and a horizontal position. When the handle assembly is in the horizontal position, the wheels are folded up underneath the platform and lie horizontally with respect thereto. And, when the handle assembly is pulled away from the platform to the upright position, the first gear members engage and turn the second gear members, resulting in the wheel-connecting bars rotating to fold out the wheels from underneath the platform toward an eventual perpendicular position with respect to the underside of the platform. | 07-03-2014 |
Wen-Fa Wu, Taipei TW
Patent application number | Description | Published |
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20120190163 | METHOD FOR MAKING DUAL SILICIDE AND GERMANIDE SEMICONDUCTORS - A method for making a dual silicide or germanide semiconductor comprises steps of providing a semiconductor substrate, forming a gate, forming source/drain regions, forming a first silicide, reducing spacers thickness and forming a second silicide. Forming a gate comprises forming an insulating layer over the semiconductor substrate, and forming the gate over the insulating layer. Forming source/drain regions comprises forming lightly doped source/drain regions in the semiconductor substrate adjacent to the insulating layer, forming spacers adjacent to the gate and over part of the lightly doped source/drain regions, and forming heavily doped source/drain regions in the semiconductor substrate. The first silicide is formed on an exposed surface of lightly and heavily doped source/drain regions. The second silicide is formed on an exposed surface of lightly doped source/drain regions. A first germanide and second germanide may replace the first silicide and the second silicide. | 07-26-2012 |
Wen-Fa Wu, Hsinchu County TW
Patent application number | Description | Published |
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20130320408 | SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF - A semiconductor device comprises a substrate, a metal-semiconductor compound layer and at least one kind of metal dopant. The substrate has a surface. The metal-semiconductor compound layer extends downwards into the substrate from the surface. The metal dopant which is made by one of a group of metal elements with atomic numbers ranging from 57 to 78 or the arbitrary combinations thereof and doped in the metal-semiconductor compound layer and the substrate with at least one peak concentration formed adjacent to the interface of the metal-semiconductor compound layer and the substrate. | 12-05-2013 |