Wei-Fan
Wei-Fan Chen, Beijing CN
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20150104114 | METHOD OF PROCESSING PHOTOS FROM MULTIPLE SOURCES AND ITS APPARATUS - The present invention relates to photo processing. Disclosed is a method for processing photos from multiple sources and its apparatus. In the present invention, the method of processing photos from multiple sources include: obtaining photo files from at least two sources; for the obtained photo files, merging the photo files originating from the same primitive photo into one photo object for post-processing in the unit of photo objects, each photo object contains pointer(s) to the photo file(s) corresponding with the photo object. In the present invention, while substantial contents of photo files from different sources are identical, the photo files are merged into one photo object, then users can operate in the unit of photo objects, a system automatically processes respective files of the photo objects according to different operation types, and users do not need to care about the detail of the level of the photo files, such as the sources of the photo files etc., which simplifies the user operations. | 04-16-2015 |
Wei-Fan Chen, Taoyuan County TW
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20120256229 | Electrostatic discharge protection device and Electrostatic discharge protection circuit thereof - The ESD protection device includes a substrate, a well, a first doped region and a second doped region. The substrate has a first conductive type, and the substrate is electrically connected to a first power node. The well has a second conductive type, and is disposed in the substrate. The first doped region has the first conductive type, and is disposed in the well. The first doped region and the well are electrically connected to a second power node. The second doped region has the second conductive type, and is disposed in the substrate. The second doped region is in a floating state. | 10-11-2012 |
20150130014 | FAST RECOVERY RECTIFIER - The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions. | 05-14-2015 |
20150200539 | TRANSIENT VOLTAGE SUPPRESSOR - The invention provides a voltage regulator including a transient voltage suppressor. The transient voltage suppressor includes N first transistors and N semiconductor units. The N first transistors are coupled between a reference ground and N pads respectively, and the N transistors are controlled by a voltage on a reference power line. The N semiconductor units are coupled between the reference ground and the N pads respectively, or coupled between the reference power line and the N pads respectively. N is a positive integer. | 07-16-2015 |
Wei-Fan Chen, Taoyuan TW
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20130307017 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT - The invention discloses an ESD protection circuit, comprising a P-type substrate; an N-well formed on the P-type substrate; a P-doped region formed on the N-well, wherein the P-doped region is electrically connected to an input/output terminal of a circuit under protection; a first N-doped region formed on the P-type substrate, the first N-doped region is electrically connected to a first node, and the P-doped region, the N-well, the P-type substrate, and the first N-doped region constitute a silicon controlled rectifier; and a second N-doped region formed on the N-well and electrically connected to a second node, wherein a part of the P-doped region and the second N-doped region constitute a discharging path, and when an ESD event occurs at the input/output terminal, the silicon controlled rectifier and the discharging path bypass electrostatic charges to the first and second nodes respectively. | 11-21-2013 |
20140054643 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - The invention discloses an ESD protection circuit, including a P-type substrate; an N-well formed on the P-type substrate; a P-doped region formed on the N-well, wherein the P-doped region is electrically connected to an input/output terminal of a circuit under protection; a first N-doped region formed on the P-type substrate, the first N-doped region is electrically connected to a first node, and the P-doped region, the N-well, the P-type substrate, and the first N-doped region constitute a silicon controlled rectifier; and a second N-doped region formed on the N-well and electrically connected to a second node, wherein a part of the P-doped region and the second N-doped region constitute a discharging path, and when an ESD event occurs at the input/output terminal, the silicon controlled rectifier and the discharging path bypass electrostatic charges to the first and second nodes respectively. | 02-27-2014 |
Wei-Fan Chou, Pingtung County TW
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20150366922 | Method of Processing Rhinacanthus nastutus (L.) Kurz - The invention discloses a method of processing | 12-24-2015 |
Wei-Fan Lee, Hsinchu City TW
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20150243785 | SEMICONDUCTOR ARRANGEMENT WITH STRESS CONTROL AND METHOD OF MAKING - One or more semiconductor arrangements are provided. The semiconductor arrangements include a buried layer over a well, a dielectric layer over the buried layer, a first gate stack over the dielectric layer and a S/D region disposed proximate the first gate stack. The S/D region has a first tip proximity region that extends under the first gate stack. One or more methods of forming a semiconductor arrangement are also provided. The methods include forming a S/D recess in at least one of a dielectric layer, a buried layer or a well, wherein the S/D recess is proximate a first gate stack and has a first recess tip proximity region that extends under the first gate stack as a function of the buried layer, and forming a S/D region in the S/D recess such that the S/D region has a first tip proximity region that extends under the first gate stack. | 08-27-2015 |
Wei-Fan Liao, Donggang Township TW
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20140256138 | METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFTER DRY ETCH - A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid. | 09-11-2014 |
20150249024 | METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFER DRY ETCH - A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid. | 09-03-2015 |
Wei-Fan Lin, Taipei City TW
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20150340809 | FASTENING APPARATUS FOR SECURING A CONNECTOR TO AN ELECTRONIC DEVICE - The present invention provides a fastening apparatus for retaining a connector coupled to an electronic device. The fastening apparatus for connector comprises a first fixing portion, a connection portion and a second fixing portion. The first fixing portion is disposed at one side of a connector and has a first binding unit. The connection portion is formed on the fixing portion to connect the first fixing portion to a housing of an electronic device. The second fixing portion is pivotally rotatable relative to the first fixing portion, the second fixing portion including a second binding unit which is engages with the first binding unit when the second fixing portion rotates to a particular location, so that a cable of the connector is enclosed between the first fixing portion and the second fixing portion. | 11-26-2015 |
Wei-Fan Tsai, Taipei TW
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20110279962 | Support Frame and Electronic Apparatus - A support frame is adapted to provide support to a display device, and includes a pivot seat module, a first support module and a second support module. The pivot seat module is adapted to be mounted to the display device for rotation relative to the display device about a first axis passing through the display device. The first support module is coupled to the pivot seat module, and is disposed to form an angle with a backside of the display device for supporting the display device at a substantially upright position. The second support module is coupled to the pivot seat module, is pivotable relative to the pivot seat module about a second axis that is orthogonal to the first axis, and cooperates with the first support module to support the display device at a lying position. | 11-17-2011 |