Patent application number | Description | Published |
20110226727 | ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME - Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound. | 09-22-2011 |
20120135555 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant. | 05-31-2012 |
20120153287 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 06-21-2012 |
20130015471 | ETCHANT FOR METAL LAYER INCLUDING COPPER OR A COPPER ALLOY, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME AND DISPLAY SUBSTRATEAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM Lee; Wang-WooAACI Suwon-siAACO KRAAGP Lee; Wang-Woo Suwon-si KR - An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water. | 01-17-2013 |
20130017636 | COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE COMPOSITIONAANM KIM; Bong-KyunAACI Hwaseong-siAACO KRAAGP KIM; Bong-Kyun Hwaseong-si KRAANM CHOI; Shin-IlAACI Hwaseong-siAACO KRAAGP CHOI; Shin-Il Hwaseong-si KRAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM LEE; Wang-WooAACI Suwon-siAACO KRAAGP LEE; Wang-Woo Suwon-si KRAANM JANG; Seok-JunAACI Asan-siAACO KRAAGP JANG; Seok-Jun Asan-si KRAANM KIM; Byung-UkAACI Hwaseong-siAACO KRAAGP KIM; Byung-Uk Hwaseong-si KRAANM PARK; Sun-JooAACI Pyeongtaek-siAACO KRAAGP PARK; Sun-Joo Pyeongtaek-si KRAANM YOON; Suk-IlAACI Suwon-siAACO KRAAGP YOON; Suk-Il Suwon-si KRAANM JEONG; Jong-HyunAACI SeoulAACO KRAAGP JEONG; Jong-Hyun Seoul KRAANM HUR; Soon-BeomAACI Anyang-siAACO KRAAGP HUR; Soon-Beom Anyang-si KR - A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition. | 01-17-2013 |
20130099242 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced. | 04-25-2013 |
20130115727 | ETCHING COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SYSTEM - An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H | 05-09-2013 |
20130115733 | ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME - Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH | 05-09-2013 |
20130115770 | ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching | 05-09-2013 |
20130178010 | METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of forming a metal pattern is provided. In the method, a first titanium layer, a copper layer and a second titanium layer are sequentially formed on a substrate. A photo pattern is formed on the second titanium layer. The first titanium layer, the copper layer and the second titanium layer are patterned using the photo pattern to form a first titanium pattern, a copper pattern formed on the first titanium pattern and a second titanium pattern formed on the copper pattern. Therefore, a fine metal pattern may be formed. | 07-11-2013 |
20130183822 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING TRENCH, METAL WIRE, AND THIN FILM TRANSISTOR ARRAY PANEL - The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon. | 07-18-2013 |
20140024206 | ETCHANT COMPOSITION AND METHOD OF FORMING METAL WIRE AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device. | 01-23-2014 |
20140038348 | ETCHANT COMPOSITION AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR USING THE SAME - An etchant composition includes ammonium persulfate (((NH | 02-06-2014 |
20140097006 | ETCHANT COMPOSITION, METAL WIRING, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.1% by weight of a copper-ion compound, between about 1% by weight to about 10% by weight of a nitric salt, between about 1% by weight to about 10% by weight of an acetic salt, and a remainder of water | 04-10-2014 |
20140125904 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line. | 05-08-2014 |
20140295599 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 10-02-2014 |