Patent application number | Description | Published |
20090206348 | Composite Substrate, and Method for the Production of a Composite Substrate - A composite substrate ( | 08-20-2009 |
20090212307 | Light-emitting diode chip comprising a contact structure - In a luminescence diode chip having a radiation exit area ( | 08-27-2009 |
20090218587 | Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof - A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence ( | 09-03-2009 |
20090290610 | Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - A method for laterally dividing a semiconductor wafer ( | 11-26-2009 |
20090309113 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate. | 12-17-2009 |
20100091516 | Arrangement Comprising a Fiber-Optic Waveguide - An arrangement comprising a fiber-optic waveguide ( | 04-15-2010 |
20110140141 | Method for Production of a Radiation-Emitting Semiconductor Chip - A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface. | 06-16-2011 |
20110169029 | OPTOELECTRONIC COMPONENT AND PACKAGE FOR AN OPTOELECTRONIC COMPONENT - Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation. | 07-14-2011 |
20110177634 | Edge-Emitting Semiconductor Laser Chip - A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation. | 07-21-2011 |
20110186904 | Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof - A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence ( | 08-04-2011 |
20120040484 | Method for Producing a Semiconductor Element - Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively. | 02-16-2012 |
20120164770 | Radiation-Emitting Body and Method for Producing a Radiation-Emitting Body - A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified. | 06-28-2012 |
20120280207 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 11-08-2012 |