Patent application number | Description | Published |
20090208501 | Anti-Pathogen Immunoadhesins - Chimeric molecules that include a pathogen recognition module derived from a pathogen binding domain of a pathogen recognition protein, e.g., a toll-like receptor (TLR), CD14, BPI, MD-2, scavenger receptors (SRs), surfactant proteins (SP), C-reactive protein (CRP), Mannan-binding lectin (MBL), or complement Clq globular binding domain, an optional linker, and an Fc portion of an antibody are described and are useful for, e.g., drug discovery and treatment of conditions related to TLR signaling. | 08-20-2009 |
20100291577 | Toll-Like Receptor 9 Modulators - TLR9 is localized to endoplasmic reticulum and upon stimulation with a TLR9 ligand, is transported to a tubular lysosomal compartment as is CpG-DNA. Furthermore, it is shown that TLR9 and CpG-DNA directly bind. It was also found that the MyD88 translocates in response to activation of TLR9-mediated signaling. Methods of identifying compounds that affect translocation and activity of TLR9 and MyD88 are described. | 11-18-2010 |
Patent application number | Description | Published |
20080261847 | Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 10-23-2008 |
20090192065 | DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING - A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device. | 07-30-2009 |
20090301996 | FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES - A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials. | 12-10-2009 |
20100056410 | COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION - Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant. | 03-04-2010 |
20110275164 | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 11-10-2011 |
20120042898 | COMPOSITIONS AND METHOD FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION - Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant. | 02-23-2012 |