Patent application number | Description | Published |
20080210671 | Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system - A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles. | 09-04-2008 |
20080217306 | Rapid detection of imminent failure in optical thermal processing of a substrate - A system for thermal processing of a substrate includes a source of radiation, optics disposed between the source and the substrate to receive light from the source of radiation at the optics proximate end, and a housing holding the optics and having a void inside the housing isolated from light emitted from the source. A light detector is disposed within the void in the housing to detect light from the optics emitted into the housing and send a deterioration signal. The system further includes a power supply for the source of radiation, and a controller to control the power supply based on the deterioration signal from the light detector. | 09-11-2008 |
20090084986 | Multiple band pass filtering for pyrometry in laser based annealing systems - A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element. | 04-02-2009 |
20090152247 | Fast axis beam profile shaping for high power laser diode based annealing system - A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles. | 06-18-2009 |
20090261078 | RADIANT ANNEAL THROUGHPUT OPTIMIZATION AND THERMAL HISTORY MINIMIZATION BY INTERLACING - The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam. | 10-22-2009 |
20090311880 | Method of Annealing Using Two Wavelengths of Continuous Wave Laser Radiation - A thermal processing apparatus and method in which a first laser source, for example, a CO | 12-17-2009 |
20100264123 | Annealing apparatus using two wavelengths of continuous wave laser radiation - A thermal processing apparatus and method in which a first laser source, for example, a CO | 10-21-2010 |
20110223773 | LOW TEMPERATURE PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT NON-PEELING OPTICAL ABSORBER FOR A SCANNING LASER SURFACE ANNEAL OF IMPLANTED DOPANTS - A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength. | 09-15-2011 |
20110263068 | METHODS FOR ENHANCING LIGHT ABSORPTION DURING PV APPLICATIONS - Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer. | 10-27-2011 |
20120037181 | CLEANING METHODS FOR IMPROVED PHOTOVOLTAIC MODULE EFFICIENCY - Embodiments of the present invention generally relate to methods for cleaning a substrate prior to a deposition process. The methods generally include multiple cleaning solutions for removing contaminants from a surface of a substrate. The multiple solutions generally have different compositions, and each of the solutions contain one or more additives selected to remove a variety of contaminants. Mechanical agitation may also be utilized to remove contaminants from the surface of a substrate. After cleaning a substrate, a material may be deposited on the substrate surface. | 02-16-2012 |
20120234800 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120234801 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120238111 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120261395 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 10-18-2012 |
20150069028 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 03-12-2015 |