Vasiliy
Vasiliy Gushenets, Tomsk RU
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20140239191 | Method for Uninterrupted Production of a Polyatomic Boron Molecular Ion Beam with Self-Cleaning - The uninterrupted production of an ion beam with self-cleaning of a discharge chamber and extractor system, including extraction aperture(s), of an ion implantation device. The method increases the time of continuous operation of the ion implantation device, and therefore, increases total implantation time without reducing intensity. As a result, the time integrated output of the ion implantation device is increased. The method includes feeding a working molecule comprising at least two boron atoms and a strong oxidizer into an ion implantation device and removing gaseous compounds from the ion implantation device, wherein said working molecule provides upon fragmentation a polyatomic boron-containing ion, and the strong oxidizer which reacts with solid products of decomposition of the working molecule to form said gaseous compounds. A working molecule including at least two boron atoms and at least one strong oxidizer is also disclosed. Examples of the working molecule include C | 08-28-2014 |
Vasiliy Mukasyan, Chernogolovka RU
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20090202414 | Method of manufacturing sub-micron silicon-carbide powder and composition for manufacturing thereof - A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture. | 08-13-2009 |
20110085960 | Method of manufacturing high-surface-area silicon - A method for synthesis of high surface-area (>100 m | 04-14-2011 |
Vasiliy Ostroumov, Bad Schwartau DE
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20140092926 | WAVELENGTH-STABILIZED FREQUENCY-CONVERTED OPTICALLY PUMPED SEMICONDUCTOR LASER - A frequency-doubled OPS-laser having a desired output wavelength of 532 nm is tunable about that wavelength by a temperature tuned birefringent filter (BRF). The temperature of the BRF is varied while measuring transmission of a sample of the output through a Nd:YAG crystal having an absorption peak at a wavelength of about 532.4 nm. The peak is detected as a minimum of transmission and the temperature at which that minimum occurs is recorded. From wavelength-change-versus-temperature data for the BRF a temperature is calculated at which the output wavelength has the desired value and is maintained at that value to stabilize the output wavelength. | 04-03-2014 |
Vasiliy Panferov, Moscow RU
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20130054595 | Automated File Name Generation - Described herein are methods for determining a type and unique features of a document. The methods generally include generating at least one document hypothesis corresponding to the type of the document. For each document hypothesis, the document type is verified. A best type hypothesis is selected. A document name is formed based on the best type hypothesis and one or more unique features of the document. Such steps are generally included in automatically or programmatically naming of documents. A unique or semi-unique name is given, one that reproduces some of the document's contents, attributes and/or characteristics. Each document is provided with a name that can be easily understood and that is related to the content of the document. | 02-28-2013 |