Van Noort, NY
Wibo Van Noort, Wappingers Falls, NY US
Patent application number | Description | Published |
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20080258182 | Bicmos Compatible Jfet Device and Method of Manufacturing Same - A BiCMOS-compatible JFET device comprising source and drain regions ( | 10-23-2008 |
20090203184 | Self-Aligned Epitaxially Grown Bipolar Transistor - The illumination system has a light source ( | 08-13-2009 |
Wibo D. Van Noort, Wappingers Falls, NY US
Patent application number | Description | Published |
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20090053872 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR - The invention relates to a method of manufacturing a bipolar transistor on a semiconductor substrate ( | 02-26-2009 |
20090166753 | Semiconductor Device and Method of Manufacturing Such a Device - The invention relates to a semiconductor device ( | 07-02-2009 |
20090174034 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device ( | 07-09-2009 |
20100237434 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device ( | 09-23-2010 |
Wibo Daniel Van Noort, Wappingers Falls, NY US
Patent application number | Description | Published |
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20080318375 | Method of Fabricating a Duel-Gate Fet - The invention provides a method of fabricating an extremely short-length dual-gate FET, using conventional semi-conductor processing techniques, with extremely small and reproducible fins with a pitch and a width that are both smaller than can be obtained with photolithographic techniques. On a protrusion ( | 12-25-2008 |
20090096046 | SEMICONDUCTOR DEVICE FOR RADIATION DETECTION - The invention provides a semiconductor device ( | 04-16-2009 |
20090096052 | SEMICONDUCTOR DEVICE FOR RADIATION DETECTION - The invention provides a semiconductor device ( | 04-16-2009 |
20100047987 | METHOD OF FABRICATING A BIPOLAR TRANSISTOR - The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor ( | 02-25-2010 |
20110147884 | Contacting and Filling Deep-Trench-Isolation with Tungsten - Electrically isolated, deep trench isolation (DTI) structures, are formed in a wafer, and a portion of the DTI structures are converted to electrically connected structures to provide a shielding function, or to provide connection to deep buried layers. In one aspect, DTI structures include a polysilicon filling over a liner layer disposed on the inner surface of a deep trench, the polysilicon is removed by isotropic etching, and the deep trench is re-filled with a conductive material. Alternatively, the polysilicon filling remains and a contact is formed to provide an electrical connection to the polysilicon. In another aspect, a deep trench is disposed in the wafer such that a lower portion thereof is located within a deep buried layer, and after the polysilicon is removed, an anisotropic etch removes a portion of the deep trench liner from the bottom of the deep trench, thereby allowing a tungsten deposition to make electrical contact with the deep buried layer. | 06-23-2011 |