Vais
George Vais, Thassos GR
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20150276340 | Firearm Suppressor Baffle - A baffle for use in a firearm suppressor, to decrease the amount of sound and flash upon the firing of a firearm on which the suppressor is attached. The baffle comprises a hollow cone-shaped main member having a vertex connected to a base by an annular side surface. The base and the vertex are centered at an elongate central axis of the main member and the side surface has a baffle entry aperture extending therethrough. The baffle entry aperture extends along the side surface in the direction of the base and is offset from the elongate central axis of the main member. In use, the cone-shaped main member is located in a non-centered position within the suppressor such that the vertex is offset from a bore extending through the suppressor and the baffle entry aperture is aligned with the bore of the suppressor. | 10-01-2015 |
Jim Vais, Victoria AU
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20130189437 | SPRAY PAINTING - An apparatus for the application of paint to an article ( | 07-25-2013 |
Margaret J. Vais, Mount Prospect, IL US
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20140114707 | INTERPRETATION OF STATISTICAL RESULTS - Provided are techniques for summarizing statistical results. Multiple sets of statistical results are received, wherein each of the sets of statistical results are ordered according to interestingness. Insights are generated based on the multiple sets of statistical results. Relationships between the generated insights are identified. An executive summary is generated with a set of findings based on the identified relationships. An interactive visualization is provided with the generated insights based on the executive summary. | 04-24-2014 |
Philip Vais, Powell, OH US
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20090065170 | DIE COOLING APPARATUS AND METHOD THEREOF - A die cooling system for cooling a cast wheel for an automotive vehicle is provided that includes a die, multiple thermocouples embedded in the die, which measure the actual cast metal temperature, adjustable cooling valves, and a control system. The control system receives actual casting metal temperature data from each thermocouple to control the operation of the adjustable cooling valves. | 03-12-2009 |
20100156165 | SEAT TIGHTENING MECHANISM FOR CHILD SAFETY SEAT - This invention relates to mechanisms and systems for securing a child safety seat to a vehicle seat. Some embodiments include one or more movable anchoring structures. The anchoring structures can be connected to a rotatable member that is capable of exposing and retracting the movable anchoring structures. The rotatable member can also be connected to one or more lever members disposed at one or both ends of the rotatable member and capable of hand operation. | 06-24-2010 |
20150275122 | NOVEL COMPOSITIONS AND INTEGRATED PROCESSES FOR ADVANCED WARM-FORMING OF LIGHT METAL ALLOYS - Systems, methods, and compositions for improved warm-forming of light metal alloys, such as aluminum alloys, magnesium alloys, or titanium alloys, are disclosed. The systems and methods relate to pulse thermal processing, engineered plastic deformation, and micro-aging processes, as well as to the application of multi-functional lubricants. The disclosed multifunctional lubricant compositions provide a number of advantages when used in warm-forming processes, and in one embodiment, include organo-titanates and magnesium hydroxide, and in other embodiments an organo-titanate, magnesium hydroxide and boron nitride. | 10-01-2015 |
Valantis Vais, Beverley Park AU
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20140149076 | MONITORING SYSTEM - A method for analysing performance of a solar photovoltaic installation data indicating measured value of power generated by the photovoltaic installation receives and stores that data in a database. An expected output of the installation for at least one period of a test day using a first method is determined. The first expected output of the installation is compared with the measured value of power generated. If the expected output of the installation determined by the first method differs from the measured value by more than an acceptable tolerance, an expected output using another method is determined. If the expected output of the installation determined by the other method differs from the measured value by more than an acceptable tolerance, an under performance warning for the solar photovoltaic installation is issued. | 05-29-2014 |
20140251817 | METAL CONTACT SCHEME AND PASSIVATION SCHEME FOR SOLAR CELLS - A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidising the exposed surface to form an oxide layer. | 09-11-2014 |
20150017793 | FORMATION OF LOCALISED MOLTEN REGIONS IN SILICON CONTAINING MULTIPLE IMPURITY TYPES - A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity to the surface of the substrate, with each of these impurity atoms having different diffusion coefficients or segregation coefficients; b) locally melting a point on the surface of the substrate with a laser, whereby the at least two different types of impurity atoms are incorporated into the melted silicon material; c) removing the laser to allow the silicon material to recrystallise; d) controlling a rate of application and/or removal of the laser to control the creation of the impurity distribution profile, with different distribution profiles for each of the at least two types of impurity atoms in the recrystallised material. | 01-15-2015 |
Valantis Vais, Beverly Park AU
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20140322860 | METAL CONTACT SCHEME FOR SOLAR CELLS - A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution. | 10-30-2014 |