Patent application number | Description | Published |
20110053686 | GAME DEVICE, CONTROL METHOD, AND COMPUTER PROGRAM PRODUCT - A game device includes a packet processing section that processes a packet that is transferred between the game device and another game device via a network, a game calculation section that performs a game calculation process based on data transferred using a packet, and an image generation section that generates an image based on a result of the game calculation process. The game calculation section performs a game sequence process as the game calculation process in each game sequence interval. A packet that is transferred between the game device and the other game device includes a packet ID that specifies the type of data transferred using the packet, and an interval ID that specifies the game sequence interval that utilizes data transferred using the packet. The packet processing section compares the interval ID included in a received packet with the interval ID of a current game sequence interval. The game calculation section performs the game calculation process based on data included in a packet when the interval ID included in the packet coincides with the interval ID of the current game sequence interval. | 03-03-2011 |
20140295941 | GAME SYSTEM, SERVER SYSTEM, PROCESSING METHOD, AND INFORMATION STORAGE MEDIUM - A game system includes a game processing section that performs a process that implements a game that utilizes a moving object, the moving object moving in a game space based on operation information, a restoration processing section that performs a restoration process that restores the moving object that has reached an unable-to-continue state when it has become unable to continue to play the game that utilizes the moving object, the moving object being restored at a restoration point in the game space that has been selected by a player, and a charging section. The charging section performs a charging process that causes a charge to differ corresponding to the restoration point selected by the player. | 10-02-2014 |
20150080127 | GAME SYSTEM, SERVER SYSTEM, PROCESSING METHOD, AND INFORMATION STORAGE MEDIUM - A game system includes a game processing section that performs a process that implements a game, a data link processing section that determines that a data link activation condition has been satisfied when a data link start positional relationship has been established between a moving object and another moving object, and performs a process that produces a data link effect that changes at least one of the radar-related capability of the moving object and the performance of the moving object, and a display processing section that performs a display process that displays a display object that notifies a player of information about a data link. The data link processing section performs a process that prohibits production of the data link effect during at least one of a given first period after the game has started, and a given second period after production of the data link effect has been canceled. | 03-19-2015 |
20150123069 | STORAGE ELEMENT - A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow. | 05-07-2015 |
Patent application number | Description | Published |
20080239560 | MAGNETIC DEVICE AND METHOD OF CONTROLLING MAGNETIC DEVICE - According to an aspect of an embodiment, a magnetic device comprises a head for writing data into or reading data from a medium, the head having an actuator for changing a flying height of the head over the medium, a storage for storing characteristic information of areas of the medium and a controller for controlling the actuator on the basis of the characteristic information of the areas of the medium when writing data into or reading data from the areas of the medium. | 10-02-2008 |
20080272456 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a buffer layer | 11-06-2008 |
20090057719 | COMPOUND SEMICONDUCTOR DEVICE WITH MESA STRUCTURE - A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa formed above the InP substrate and including a channel layer, a carrier supply layer above the channel layer and a contact cap layer above the carrier supply layer; ohmic source electrode and drain electrode formed on the cap layer; a recess formed by removing the cap layer between the source and drain electrodes, and exposing the carrier supply layer; an insulating film formed on the cap layer and retracted from an edge of the cap layer away from the recess; a gate electrode extending from the carrier supply layer in the recess to outside of the mesa; and air gap formed by removing side portion of the channel layer facing the gate electrode outside the mesa. | 03-05-2009 |
20090085063 | COMPOUND SEMICONDUCTOR DEVICE WITH T-SHAPED GATE ELECTRODE AND ITS MANUFACTURE - A method for manufacturing a compound semiconductor device forms an EB resist layer on first SiN film, performs EB exposure at high dose for recess forming opening and at low dose for eaves removing opening, develops the high dose EB resist pattern to etch the first SiN film, selectively etches the cap layer to form a recess wider than the opening of the first SiN film leaving eaves of SiN, develops the low dose EB resist pattern to form the eaves removing opening, etches the first SiN film to extinguish the eaves, forms second SiN film on the exposed surface, forms a resist pattern having a gate electrode opening on the second SiN film to etch the second SiN film, forms a metal layer to form a gate electrode by lift-off. The SiN film in eaves shape will not be left. | 04-02-2009 |
20090213486 | DATA RECORDING DEVICE - A data recording device for storing data, the data recording device includes: a medium for storing data; a head assembly including a read element for reading out data stored in the medium and a heater for controlling a distance between the read element and the medium within a predetermined range during data reading out by the read element; and a processor for executing a test process comprising: controlling the distance between the read element and the medium in a test range outside the predetermined range by controlling the heater, and reading out test data from the medium while the distance between the read element and the medium is maintained in the test range so as to evaluate the data recording device. | 08-27-2009 |
20090310246 | HEAD FLYING HEIGHT CONTROL METHOD, WRITE CURRENT VALUE DETERMINING METHOD, AND STORAGE DEVICE - A head flying height control method includes the steps of: detecting contact of a head having a heater with a corresponding storage medium, and associating the amount of heat generated by the heater when the contact is detected with a situation where the flying height of the head is zero; measuring at least one type of characteristics that are the saturation characteristics of the read margin of data written on the storage medium with the head, and the saturation characteristics of the electromagnetic conversion characteristics of the head, the measuring step being carried out every time the flying height of the head is varied, with a reference being the situation where the flying height of the head is zero, the current used for writing the data being a parameter in the saturation characteristics; and adjusting the flying height of the head, based on the measurement result of the measuring step. | 12-17-2009 |
20100248676 | SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling. | 09-30-2010 |
20110127545 | COMPOUND SEMICONDUCTOR DEVICE WITH T-SHAPED GATE ELECTRODE - A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening. | 06-02-2011 |
20120043587 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second semiconductor layer, the first semiconductor layer provided with a first semiconductor region at a given distance from an interface between the first semiconductor layer and the second semiconductor layer, and an impurity concentration of the first semiconductor region higher than an impurity concentration of the first semiconductor layer except where the first semiconductor region is formed. | 02-23-2012 |
20120299057 | SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling. | 11-29-2012 |
20140057401 | COMPOUND SEMICONDUCTOR DEVICE WITH MESA STRUCTURE - A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa formed above the InP substrate and including a channel layer, a carrier supply layer above the channel layer and a contact cap layer above the carrier supply layer; ohmic source electrode and drain electrode formed on the cap layer; a recess formed by removing the cap layer between the source and drain electrodes, and exposing the carrier supply layer; an insulating film formed on the cap layer and retracted from an edge of the cap layer away from the recess; a gate electrode extending from the carrier supply layer in the recess to outside of the mesa; and air gap formed by removing side portion of the channel layer facing the gate electrode outside the mesa. | 02-27-2014 |
Patent application number | Description | Published |
20100000880 | BIOSENSOR MEASUREMENT SYSTEM AND MEASUREMENT METHOD - There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode. | 01-07-2010 |
20130337571 | BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME - With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values. | 12-19-2013 |
20140360900 | PACKAGE-TYPE CARRIER AND METHOD FOR UNWRAPPING SAME - A package-type carrier, wherein a packaged object that is a biosensor can be easily taken out of the package-type carrier and attached to a measuring device without touching the packaged object. A package-type carrier has an unsealed portion outside a sealed portion and near a connection electrode of a biosensor, and has, at the end of or near the unsealed portion, a leading end processed portion such that a space is provided in a portion between an upper cover and a lower cover of the package-type carrier. | 12-11-2014 |
Patent application number | Description | Published |
20130032856 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers, and the first and second semiconductor layers are in contact with each other; and a first energy level at a bottom edge of a conduction band of the first semiconductor layer is lower than a second energy level at a top edge of a valence band of the second semiconductor layer, and the second energy level at the top edge of the valence band of the second semiconductor layer is substantially the same as a third energy level at a bottom edge of a conduction band of the third semiconductor layer. | 02-07-2013 |
20130240835 | SEMICONDUCTOR DEVICE AND RECEIVER - A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion. | 09-19-2013 |
20140070275 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and third and fourth semiconductor layers of the first conductivity type formed between the first and second semiconductor layer. The first, the third, the fourth, and the second semiconductor layers are coupled in this order. A band gap of the third semiconductor layer is narrower than that of the first semiconductor layer, and a band gap of the fourth semiconductor layer is narrower than that of the third semiconductor layer. | 03-13-2014 |
20150028391 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device includes a substrate, a p-type first semiconductor layer over the substrate and contains antimony, a p-type second semiconductor layer over the first semiconductor layer and contains antimony, an n-type third semiconductor layer over the second semiconductor layer, a fourth semiconductor layer between the first semiconductor layer and the second semiconductor layer, the fourth semiconductor layer containing phosphorus and having a thickness in which electrons tunnel between the first semiconductor layer and the second semiconductor layer, a first electrode in ohmic contact with the first semiconductor layer, and a second electrode in ohmic contact with the third semiconductor layer. The first semiconductor layer is made from a material whose contact resistance with the first electrode is lower than contact resistance of the second semiconductor layer. | 01-29-2015 |