Patent application number | Description | Published |
20090032955 | SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND DISPLAY APPARATUS - A semiconductor device including n, where notation n denotes a positive integer at least equal to three, conductive layers created as stacked layers on a substrate and connected to each other through a contact pattern, a manufacturing method thereof and a display apparatus thereof are provided. | 02-05-2009 |
20090146067 | LIGHT SENSOR AND DISPLAY - A light sensor includes a control electrode formed on a substrate and having two edges, and a semiconductor film formed opposite the control electrode with an insulating film interposed therebetween, and including a photoactive layer and electrode regions located in a pair on opposite sides of the photoactive layer. The photoactive layer is arranged in an area that overlaps the control electrode. At least one of the paired electrode regions overlaps proximal one of the edges of the control electrode, and on and along the proximal edge, the at least one electrode region has a length shorter than that of the photoactive layer in a direction along the proximal edge of the control electrode. | 06-11-2009 |
20090146967 | DISPLAY APPARATUS - Disclosed herein is a display apparatus including a display section; a light radiating section; a plurality of light converging lenses; and a plurality of light receiving devices, wherein the display section includes pixel areas each used for creating a pixel section, and sensor areas each used for creating one of the light receiving devices; the light radiating section outputs light and radiates the output light to the display section from a particular-side surface of the display section; each of the light converging lenses is created in one of the sensor areas each located in the display section and converges light generated by the light radiating section on a focal point inside the display section, passing on the converged light to the other-side surface of the display section; and each of the light receiving devices is created in one of the sensor areas to serve as a device for receiving light which arrives at the other-side surface of the display section as light reflected by a subject of detection. | 06-11-2009 |
20090146992 | DISPLAY DEVICE - Disclosed herein is a display device including, a display section having a display surface, and capable of displaying information on the display surface, and a light storing section capable of receiving incident light including visible light, absorbing a part of the incident light, and outputting the part of the incident light as an afterglow including non-visible light, wherein a light sensor configured to detect an object to be detected on a side of the display surface on a basis of a non-visible light component of output light from the light storing section is disposed within the display section. | 06-11-2009 |
20090147353 | SURFACE EMISSION APPARATUS, LIGHT GUIDE, AND METHOD OF MANUFACTURING LIGHT GUIDE - A surface emission apparatus includes a first light source for emitting invisible light rays; a second light source for emitting visible light rays; a light guide having a light entrance surface for entering therethrough into the light guide the invisible light rays emitted from the first light source and the visible light rays emitted from the second light source, and a light exit surface for emitting the invisible light rays and the visible light rays therethrough out of the light guide; and a plurality of optical devices disposed on a surface of the light guide which confronts the light exit surface, for scattering more of the invisible light rays than the visible light rays. | 06-11-2009 |
20090159786 | DISPLAY APPARATUS AND ILLUMINATION APPARATUS - A display apparatus includes: a display panel including a plurality of pixels laid out on the surface of a pixel area of the display panel; and an illumination section configured to generate illumination light in a normal direction perpendicular to the display panel, wherein the illumination section has a light source, a light guiding board, the display panel also includes a plurality of photo sensor devices, the light source includes an invisible light source, the light guiding board includes an invisible light beam reflection section. | 06-25-2009 |
20090159893 | LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE - A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface. | 06-25-2009 |
20090194760 | Memory element and display device - Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer. | 08-06-2009 |
20090230390 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer. | 09-17-2009 |
20100053098 | Information input device, information input method, information input/output device, and information input program - An information input device with a simple structure is provided, which allows information on an external proximity object to be conveniently inputted. The information input device includes: an input panel having a detection function of detecting an external proximity object; a position detection section acquiring position information and area information of the external proximity object based on a detection signal of the external proximity object obtained by the input panel; and an image generation section generating drawing data, which is to be used in a drawing process according to a behavior of the external proximity object, based on the position information and the area information so that the drawing process is performed in a manner according to an area value of the external proximity object represented by the area information. | 03-04-2010 |
20100079381 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel includes: a first substrate section formed on the front side of the display panel; a second substrate section which is opposed to the first substrate section; a plurality of pixel sections formed in a matrix form between the first and second substrate sections; and a plurality of sensor sections, each of the sensor sections having two electrodes, one electrode disposed with a electrode-to-electrode gap from the other between the first and second substrate sections, the electrode-to-electrode gap being removed as a result of the deformation of the first substrate section under pressure so that the one electrode is brought into contact with the other electrode, the sensor sections being provided between the first and second substrate sections with one of a plurality of electrode-to-electrode gap lengths respectively. | 04-01-2010 |
20100079394 | INPUT DEVICE AND DISPLAY - An input device and a display allowing latency to be reduced without degradation in display performance are provided. An input device includes a panel including: a plurality of sensor devices two-dimensionally arranged in row and column directions, a drive circuit driving the plurality of sensor devices, and a processing circuit processing output signals from the plurality of sensor devices, in which the processing circuit, prior to taking in all of the output signals from the plurality of sensor devices, determines whether or not one or more ON signals, defined as output signals affected by an object which touches or comes close to a surface of the panel, are included in previously inputted output signals, and then outputs a determination result. | 04-01-2010 |
20100085339 | SENSOR ELEMENT AND METHOD OF DRIVING SENSOR ELEMENT, AND INPUT DEVICE, DISPLAY DEVICE WITH INPUT FUNCTION AND COMMUNICATION DEVICE - The present invention provides a sensor element including two diode elements connected in series to each other, and a capacitive element having one end connected to a junction point between the two diode elements. Each of the diode elements includes a semiconductor layer having a p-type semiconductor region and an n-type semiconductor region facing each other in an in-plane direction, an anode electrode connected to the p-type semiconductor region, a cathode electrode connected to the n-type semiconductor region, a gate insulting film adjoining the semiconductor layer in a stacking direction, and a gate electrode facing the semiconductor layer with the gate insulating film in between. | 04-08-2010 |
20100097340 | Liquid-crystal display panel and chopper-type comparator - A liquid-crystal display panel includes: gate lines each serving as a row-direction line which is one of the rows of a two-dimensional matrix; data signal lines each serving as a column-direction line which is one of the columns of the two-dimensional matrix; a plurality of liquid-crystal pixel sections which are laid out to form the two-dimensional matrix and each placed at the intersection of one of the gate lines and one of the data signal lines; chopper-type comparators each connected to one of the data signal lines and each used for converting the value of a sensor signal read out from one of the liquid-crystal pixel sections connected to the data signal lines into a binary value; and a shift register for converting outputs of the chopper-type comparators from parallel data into serial data and outputting the serial data. | 04-22-2010 |
20100097548 | LIQUID CRYSTAL DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a liquid crystal display device, including: a first substrate; a second substrate; a plurality of spacers disposed between the first substrate and the second substrate; and a liquid crystal layer filled between the first substrate and the second substrate supported by the plurality of spacers; wherein each of the plurality of spacers has a multiple step structure having one or more steps. | 04-22-2010 |
20100097838 | OPTICAL SENSOR ELEMENT, IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MEMORY ELEMENT - An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage. | 04-22-2010 |
20100141598 | DISPLAY, DISPLAY DRIVING METHOD, AND ELECTRONIC APPARATUS - A display includes: a display section having a plurality of pixels provided in a region where a first substrate and a second substrate are disposed opposite to each other; a switch provided in the region where the first substrate and the second substrate are disposed opposite to each other, the switch having two electrodes closed by a pressure from outside; a detecting section comparing a signal from the switch with a reference signal to determine whether the switch is closed or not; and a precharge section applying a precharge potential to a wiring in continuity with one of the electrodes of the switch prior to the detection at the detecting section. | 06-10-2010 |
20100164921 | DISPLAY APPARATUS - Improvement of the image quality and position detection accuracy is implemented. Operation of a backlight | 07-01-2010 |
20100171120 | DISPLAY AND METHOD FOR MANUFACTURING DISPLAY - In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer | 07-08-2010 |
20100188346 | DISPLAY APPARATUS, DISPLAY APPARATUS DRIVING METHOD, AND ELECTRONIC DEVICE - Disclosed herein is a display apparatus including: a display block configured to have a plurality of picture elements; a switch arranged inside the display block and configured to be closed by an external pressure; a detection block configured to detect whether the switch is closed based on a comparison between a signal supplied from the switch and a reference signal; a precharge block configured to give a precharge potential to a wire conducting with one of electrodes of the switch before detection is executed in the detection block; and a detection block potential supply block configured to give a predetermined potential to a wire conducting with the other electrode of the switch before detection is executed in the detection block. | 07-29-2010 |
20100188347 | LIQUID CRYSTAL DISPLAY DEVICE - An embodiment of the invention provides a liquid crystal display device, including a first substrate; a second substrate; a liquid crystal layer formed between the first substrate and the second substrate; a first sensor electrode formed on the first substrate; a second sensor electrode formed on the second substrate, and disposed so as to be adapted to contact the plurality of first sensor electrodes close to one another by pressing from a side of either the first substrate or the second substrate; and a sensor drive circuit for applying a voltage to a first wiring electrically connected to one of the plurality of first sensor electrodes which the second sensor electrode is adapted to contact by the pressing, and detecting a change in potential of a second wiring electrically connected to another one of the plurality of first sensor electrodes. | 07-29-2010 |
20100194710 | INFORMATION INPUT DEVICE AND INFORMATION INPUT/OUTPUT DEVICE - An information input device includes: a first substrate; a second substrate formed opposite to the first substrate; and a position detection portion including at least three or more sensor electrodes and detecting a position at which at least one of the first substrate and the second substrate bends by electrical change among the sensor electrodes. | 08-05-2010 |
20100328438 | STEREOSCOPIC IMAGE DISPLAYING DEVICE, OBJECT PROXIMITY DETECTING DEVICE, AND ELECTRONIC APPARATUS - A stereoscopic image displaying device includes an outer surface that a detection target object approaches; a stereoscopic image generating unit that generates a three-dimensional stereoscopic image based on an input video signal, and a proximity sensor unit that is disposed on a side of the outer surface that is opposite to a side that the detection target object approaches and detects proximity of the detection target object to the outer surface based on a height that is a distance from the outer surface and is set based on parallax information included in the video signal. | 12-30-2010 |
20100328478 | PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR DRIVING PHOTOELECTRIC CONVERSION DEVICE, RADIATION IMAGING DEVICE, AND METHOD FOR DRIVING RADIATION IMAGING DEVICE - Disclosed herein is a photoelectric conversion device having unit pixels arranged in a matrix, each of the unit pixels including: a photoelectric conversion element; a source follower readout transistor configured to receive a signal charge arising from photoelectric conversion by the photoelectric conversion element by a gate, and read out an electrical signal dependent on the signal charge; and a correction circuit configured to reset gate potential of the readout transistor to Vref+Vth prior to signal readout by the readout transistor, if a reference potential given to the gate of the readout transistor is defined as Vref and threshold voltage of the readout transistor is defined as Vth. | 12-30-2010 |
20110001051 | PHOTOELECTRIC CONVERSION APPARATUS AND RADIOGRAPHIC IMAGING APPARATUS - A photodiode comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer; and a third semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, wherein an edge of the first semiconductor layer is inset from an edge of the second semiconductor layer. | 01-06-2011 |
20110043471 | TOUCH SENSOR METHODS AND APPARATUS - Touch sensor methods and apparatus are provided. A first photodiode includes an i-region of a first length. A second photodiode includes an i-region with a second length. A sensing component including a capacitive element is operably coupled to the first photodiode and the second photodiode. The first length of the i-region of the first photodiode is different than the second length of the i-region of the second photodiode. | 02-24-2011 |
20110043715 | STEREOSCOPIC IMAGE DISPLAYING APPARATUS - A stereoscopic image displaying apparatus is provided. The stereoscopic image displaying apparatus, including: an image generation section having a plurality of pixels for a plurality of colors arranged in a two-dimensional matrix and adapted to drive the pixels for the colors to generate a color image; and a parallax applying section adapted to apply a parallax to the image to allow color display of a three-dimensional image and capable of changing over a parallax direction between a first direction of the color image and a second direction perpendicular to the first direction. The parallax applying section has a first parallel state and a second parallel state. The image generation section and the parallax application section are configured so that the rates of the colors at the pixels for the colors corresponding to light transmission regions between adjacent ones of the parallax barrier regions are uniform or got closer in both of the parallel states. | 02-24-2011 |
20110122526 | MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE - A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot. | 05-26-2011 |
20110186225 | MAGNETIC RECORDING MEDIUM MANUFACTURING DEVICE - A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state. The magnetic recording medium manufactured device is provided with a substrate carrier for carrying the substrate into which the ion beam is implanted from the ion implantation chamber to the ashing chamber. | 08-04-2011 |
20110204246 | RADIATION IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME - A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor. | 08-25-2011 |
20120038018 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME - A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer. | 02-16-2012 |
20120146039 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer. | 06-14-2012 |
20120175618 | RADIATION IMAGING DEVICE, RADIATION IMAGING DISPLAY SYSTEM, AND TRANSISTOR - There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less. | 07-12-2012 |
20120248318 | RADIOGRAPHIC IMAGE-PICKUP DEVICE AND RADIOGRAPHIC IMAGE-PICKUP DISPLAY SYSTEM - A radiographic image-pickup device includes: a photoelectric conversion layer; a wavelength conversion layer provided on the photoelectric conversion layer and converting a wavelength of radiation into a wavelength within a sensitivity band of the photoelectric conversion layer; and a low-refractive-index layer provided between the photoelectric conversion layer and the wavelength conversion layer, and having a refractive index lower than a refractive index of each of the photoelectric conversion layer and the wavelength conversion layer. | 10-04-2012 |
20120299070 | PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER - Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer. | 11-29-2012 |
20120305777 | RADIATION IMAGE PICKUP DEVICE AND RADIATION IMAGE PICKUP DISPLAY SYSTEM INCLUDING THE SAME - A radiation image pickup device includes: a sensor substrate including a photoelectric conversion element; a non-ionic layer provided on a part of the sensor substrate; and a wavelength converting member provided on the non-ionic layer, and converting a wavelength of a radiation into a wavelength in a sensitivity range of the photoelectric conversion element. | 12-06-2012 |
20120313103 | RADIOACTIVE-RAY IMAGING APPARATUS, RADIOACTIVE-RAY IMAGING DISPLAY SYSTEM AND TRANSISTOR - Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film. | 12-13-2012 |
20130100330 | IMAGE PICKUP UNIT AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup unit includes: an image pickup section including a plurality of pixels, the pixels each including a photoelectric transducer and a field-effect transistor; and a drive section switching the transistor between an on operation and an off operation to perform a read operation and a reset operation of a signal charge accumulated in each of the pixels. The transistor includes a first gate electrode and a second gate electrode with a semiconductor layer in between, the drive section applies a first voltage and a second voltage to the first gate electrode and the second gate electrode of the transistor, respectively, to switch the transistor between the on operation and the off operation, and the drive section adjusts timings of switching the first and second voltages between an on-voltage and an off-voltage, on-voltage values of the first and second voltages, or both thereof to be different from each other. | 04-25-2013 |
20130149809 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME - A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer. | 06-13-2013 |
20130222660 | IMAGE PICKUP UNIT AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup unit includes: an image pickup section including a plurality of pixels, the plurality of pixels each including a photoelectric converter device and a field-effect transistor; and a driving section reading out a signal charge with use of the transistor, the signal charge being accumulated in each of the plurality of pixels. The driving section turns off the transistor by applying an off-voltage to the transistor, the off-voltage being set in consideration of an off-leakage current between a source and a drain of the transistor. | 08-29-2013 |
20130234219 | RADIOACTIVE-RAY IMAGING APPARATUS, RADIOACTIVE-RAY IMAGING DISPLAY SYSTEM AND TRANSISTOR - Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film. | 09-12-2013 |
20130241469 | CHARGING DEVICE - There is provided a charging device which can rapidly charge, with a single charger, portable devices of a plurality of charging specifications. | 09-19-2013 |
20130256544 | IMAGE PICKUP DEVICE AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup device includes: an image pickup section including a plurality of pixels; and a drive section reading a signal charge stored in each of the pixels. Each of the pixels includes: a circuit layer including a field-effect transistor, a signal line, and a holding capacitive element; a first electrode provided on the circuit layer and arranged for each of the pixels; a semiconductor layer provided on the first electrode across the pixels, and generating the signal charge based on incident radiation; a second electrode provided on the semiconductor layer; and a third electrode disposed in a region that is between the circuit layer and the semiconductor layer and that is not in opposition to the first electrode, and controlled in voltage by the drive section. | 10-03-2013 |
20140061484 | RADIATION IMAGE PICKUP DEVICE - A radiation image pickup device includes: an image pickup section having a plurality of pixels and generating an electric signal according to incident radiation, the plurality of pixels each including a photoelectric conversion element and one or a plurality of transistors of a predetermined amplifier circuit; and a correction section subjecting signal data of the electric signal obtained in the image pickup section to predetermined correction process. The correction section makes a comparison between measurement data obtained by measuring an input-output characteristic of the amplifier circuit in each of the plurality of pixels and initial data on the input-output characteristic, and performs the correction process by the pixel individually, by using a result of the comparison. | 03-06-2014 |
20150077380 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel includes a first substrate section formed on the front side of the display panel, a second substrate section which is opposed to the first substrate section, a plurality of pixel sections formed in a matrix form between the first and second substrate sections, and a plurality of sensor sections, each of the sensor sections having two electrodes, one electrode disposed with a electrode-to-electrode gap from the other between the first and second substrate sections, the electrode-to-electrode gap being removed as a result of the deformation of the first substrate section under pressure so that the one electrode is brought into contact with the other electrode, the sensor sections being provided between the first and second substrate sections with one of a plurality of electrode-to-electrode gap lengths respectively. | 03-19-2015 |