Patent application number | Description | Published |
20080225681 | OPTICAL RECORDING MEDIUM - According to an aspect of the present invention, there is provided an optical recording medium including a first substrate, a first adjusting layer, an organic recording layer, a second adjusting layer and a second substrate, sequentially stacked in the mentioned order. The first and second substrates have a refractive index of n | 09-18-2008 |
20090141615 | OPTICAL RECORDING MEDIUM - According to one embodiment, an optical recording medium according to one embodiment of the invention is an optical recording medium to be processed using a light beam having a wavelength λ and a lens having a numerical aperture NA, which includes one of a track and a pit array, and in which a width TP of the track or pit satisfies a condition 0.480≦TP×NA/λ<1.026. | 06-04-2009 |
20090196142 | INFORMATION RECORDING MEDIUM, INFORMATION RECORDING METHOD, AND INFORMATION RECORDING AND REPRODUCING APPARATUS - According to one embodiment, in an information recording medium for which a phase change material is used and in which information is recorded on, reproduced from, and erased from a recording layer by light irradiation, a recrystallization width WR at a periphery of an amorphous recording mark formed on the recording layer by light irradiation, and a recording mark width WA and a track pitch TP satisfy 1.008-06-2009 | |
20100181546 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films. | 07-22-2010 |
20100237319 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CN | 09-23-2010 |
20100327253 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a variable resistance layer includes a mixture of a first compound and a second compound. The first compound includes carbon (C) as well as at least one element selected from a group of elements G | 12-30-2010 |
20110062407 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region. | 03-17-2011 |
20120061732 | INFORMATION RECORDING/REPRODUCING DEVICE - According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more. | 03-15-2012 |
20130248965 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, there is provided a nonvolatile semiconductor memory device including a substrate, a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate, a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction, an intermediate layer formed on a surface of the second insulating layer, a third insulating layer formed on a surface of the intermediate layer, and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction. | 09-26-2013 |
20130250670 | MAGNETORESISTIVE ELEMENT AND WRITING METHOD OF MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer. | 09-26-2013 |
20140063924 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD OF THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element. The variable resistance element comprises a laminated structure including a phase-change element which has at least two different crystalline resistance states by varying a crystalline state, and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state. | 03-06-2014 |
20140241050 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell which stores data with two or more levels. The memory cell includes a structure includes a first electrode layer, a first semiconductor layer, a phase change film, an electrical insulating layer, a second semiconductor layer, and a second electrode layer arranged in order thereof, and the first semiconductor layer and the second semiconductor layer have carrier polarities different from each other. | 08-28-2014 |
20140254276 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises memory cells each which stores data with two or more levels. Each of the memory cells includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer, and the second insulating layer includes a ferroelectric layer. | 09-11-2014 |