Patent application number | Description | Published |
20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
20090096053 | Schottky Barrier Semiconductor Device and Method for Manufacturing the Same - A silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height is controlled to a desired value in a range where power loss is minimized without increasing the n factor. The method for manufacturing the silicon carbide Schottky barrier semiconductor device includes the steps of depositing Ta on a crystal face of an n-type silicon carbide epitaxial film, the crystal face having an inclined angle in the range of 0° to 10° from a (000-1) C face, and carrying out a thermal treatment at a temperature range of 300 to 1200° C. to form the Schottky electrode. | 04-16-2009 |
20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
20090243026 | Schottky Barrier Diode and Method for Using the Same - An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. | 10-01-2009 |
20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
20120325138 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. | 12-27-2012 |
20130247816 | FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FILM-FORMING METHOD FOR THE FORMATION OF SILICON CARBIDE - A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit. | 09-26-2013 |
20150214306 | SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE - The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×10 | 07-30-2015 |
20150376813 | METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT - When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA′ parallel to the first direction [11-20] toward second directions [−1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ≧40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [−1-120] opposite to the first direction [11-20] and the second directions [−1100], [1-100], to discharge defects. | 12-31-2015 |
Patent application number | Description | Published |
20090268347 | Suspension and disk drive - Embodiments of the present invention help to increase yaw stiffness while achieving higher peel stiffness and lower roll stiffness and pitch stiffness in a suspension supporting a head slider. A gimbal according to an aspect of the present invention has a securing point where the gimbal is secured to a load beam in the front and securing points where the gimbal is secured to the load beam in the rear. The gimbal tongue pivots on a dimple contact point. A front ring is secured at the securing point to support the gimbal tongue. The rear ring is secured at the securing points to support the gimbal tongue. The rear ring provides the gimbal tongue with higher yaw stiffness than the front ring. The front ring provides the gimbal tongue with higher peel stiffness than the rear ring. | 10-29-2009 |
20110013319 | DISK DRIVE WITH MICRO-ACTUATOR INTERCONNECT CONDITIONING - A disk drive configured with micro-actuator interconnect conditioning. The disk drive includes a disk, a head, an actuator, a piezoelectric element, a hardened conductive adhesive, a voltage-supply circuit, and a controller. The head is configured to access the disk. The actuator includes a suspension supporting the head, and an arm supporting the suspension. The piezoelectric element is disposed on the suspension, is electrically connected to a first drive line and a second drive line, and is configured to change the position of the head. The hardened conductive adhesive is electrically connected to at least one connecting part of the piezoelectric element and the first drive line. The voltage-supply circuit is configured to supply a voltage to the piezoelectric element. The controller is configured to control a voltage-control circuit each time a designated process is executed, and to apply a voltage to the piezoelectric element with a prescribed maximum absolute value. | 01-20-2011 |
20110051289 | HEAD-GIMBAL ASSEMBLY INCLUDING PIEZOELECTRIC ELEMENTS - A head-gimbal assembly (HGA). The HGA includes a deformable plate affixed to a load beam, a piezoelectric element affixed to the deformable plate, and a base plate affixed to the deformable plate. The deformable plate includes: a hole; a first section in front of the hole and affixed to the load beam; a second section behind the hole and affixed to the base plate; and, first and second spring members that join the first section and the second section, can deform in a front-back direction, and are positioned to sandwich the hole in a left-right direction. The piezoelectric element is affixed between the first section and the second section. The base plate includes projection members on a front edge of the plate and projecting out toward the first section. The front edges of the projection member are positioned further to a front edge than a back edge of the hole. | 03-03-2011 |
20110096438 | HEAD-GIMBAL ASSEMBLY WITH TRACE CONFIGURED TO REDUCE STRESS ON A MICROACTUATOR AND DISK DRIVE INCLUDING THE HEAD-GIMBAL ASSEMBLY - A head-gimbal assembly. The head-gimbal assembly includes a gimbal including a tongue, a stage forming a portion of the tongue, a head-slider bonded to the stage, first and second piezoelectric elements disposed on a rear side of the stage within an area of the tongue, and a trace formed on the gimbal. The first and second piezoelectric elements include respectively both a front connection pad and a rear connection pad, and are configured to extend and to contract in a fore-and-aft direction. The trace includes a plurality of leads for connecting a plurality of connection pads interconnected with a plurality of connection pads of the head-slider and configured for interconnection to connection pads of a preamplifier integrated circuit. The plurality of leads runs through and in between the front connection pad of the first piezoelectric element and the front connection pad of the second piezoelectric element. | 04-28-2011 |
Patent application number | Description | Published |
20080204381 | Light emitting element drive apparatus and portable apparatus using same - A light emitting element drive apparatus capable of always outputting the lowest voltage satisfying the drive conditions and having a high light emitting efficiency and a low power loss, and a portable apparatus using the same, comprising an LED drive apparatus | 08-28-2008 |
20130033196 | LIGHT EMITTING ELEMENT DRIVE APPARATUS AND PORTABLE APPARATUS USING SAME - A light emitting element drive apparatus capable of outputting the lowest voltage satisfying drive conditions and having high light emitting efficiency and low power loss, and a portable apparatus using the same, comprising an LED drive apparatus to which LEDs of different drive voltages required for emitting light are connected in parallel and driving one or more LEDs, wherein the LED drive apparatus | 02-07-2013 |
20140078030 | LIGHT EMITTING ELEMENT DRIVE APPARATUS AND PORTABLE APPARATUS USING SAME - A light emitting element drive apparatus capable of outputting the lowest voltage satisfying drive conditions and having high light emitting efficiency and low power loss, and a portable apparatus using the same, comprising an LED drive apparatus to which LEDs of different drive voltages required for emitting light are connected in parallel and driving one or more LEDs, wherein the LED drive apparatus | 03-20-2014 |
20140339997 | LIGHT EMITTING ELEMENT DRIVE APPARATUS AND PORTABLE APPARATUS USING SAME - A light emitting element drive apparatus capable of outputting the lowest voltage satisfying drive conditions and having high light emitting efficiency and low power loss, and a portable apparatus using the same, comprising an LED drive apparatus to which LEDs of different drive voltages required for emitting light are connected in parallel and driving one or more LEDs, wherein the LED drive apparatus | 11-20-2014 |
20150359058 | LIGHT EMITTING ELEMENT DRIVE APPARATUS AND PORTABLE APPARATUS USING SAME - A light emitting element drive apparatus capable of outputting the lowest voltage satisfying drive conditions and having high light emitting efficiency and low power loss, and a portable apparatus using the same, comprising an LED drive apparatus to which LEDs of different drive voltages required for emitting light are connected in parallel and driving one or more LEDs, wherein the LED drive apparatus | 12-10-2015 |
Patent application number | Description | Published |
20110110547 | Electronic device - An electronic device includes a speaker element having a diaphragm and a driving unit that vibrates the diaphragm; a mounting unit, in a housing, to which the speaker element is mounted; and an enclosure formed next to the mounting unit. The speaker element is mounted to the mounting unit in the housing while a side of the diaphragm is a side to be mounted to the mounting unit in the housing and a side of the driving unit is opened. | 05-12-2011 |
20130286264 | IMAGING DEVICE AND PROJECTOR UNIT - There is provided an imaging device including an image generator, a translucent mirror configured to reflect at least a portion of light emitted from the image generator and to emit the reflected light toward an outside of a housing, and an image sensor configured to receive light transmitted through the translucent mirror among light incident from the outside of the housing. | 10-31-2013 |
20140156462 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, TERMINAL APPARATUS, AND COMMUNICATION APPARATUS - There is provided an information processing apparatus including a database configured to store position data indicating a current position of at least one search target person, the position data being received from a communication apparatus of the at least one search target person, an information providing unit configured to provide the position data of the at least one search target person to a terminal apparatus of a searcher in response to an information request from the terminal apparatus of the searcher, and a communication mediation unit configured to receive, from the terminal apparatus, a communication request for requesting communication with a search target person who is selected by the searcher based on the provided position data, and to transmit a communication message to a communication apparatus of the selected search target person. | 06-05-2014 |
Patent application number | Description | Published |
20110193945 | Image display device, image display viewing system and image display method - An image display device includes an invalid area detecting portion that detects an invalid area of an image for a left eye and an image for a right eye, a final invalid area calculating portion that calculates a final invalid area of the image for the left eye and the image for the right eye based on the detected invalid area and a depth adjustment amount, a mask amount calculating portion that calculates a mask amount based on the final invalid area, a depth adjustment portion that adjusts a depth of a stereoscopic image based on the depth adjustment amount, a mask adding portion that adds a mask to the image for the left eye and to the image for the right eye after the adjustment, and a display portion that displays the image for the left eye and the image for the right eye to each of which the mask is added. | 08-11-2011 |
20120287252 | IMAGE DISPLAY DEVICE, IMAGE DISPLAY SYSTEM, AND IMAGE DISPLAY METHOD - Provided are a mask addition unit for adding a mask to an input image of a two-dimensional (2D) image on the basis of a parameter for converting the 2D image into a three-dimensional (3D) image by a monocular stereopsis principle, a conversion unit for converting the input image to which the mask is added by the mask addition unit into a right-eye image and a left-eye image by the monocular stereopsis principle, and a display unit for displaying the right-eye image and the left-eye image. | 11-15-2012 |
20130021333 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM - There is provided an image processing apparatus. The image processing apparatus generates a plurality of viewpoint images from an input image signal formed by a two-dimensional image signal such that a signal difference between viewpoints is a predetermined value, and both of two viewpoint images where the signal difference between viewpoints is equal to twice the predetermined value form a left eye image and a right eye image for realizing three-dimensional stereoscopic vision. | 01-24-2013 |
20130314497 | SIGNAL PROCESSING APPARATUS, SIGNAL PROCESSING METHOD AND PROGRAM - There is provided a signal processing apparatus including a disparity mode value calculating unit calculating a mode value of disparity related to dynamic image information, a time interval extracting unit extracting a time interval suitable for cooperation of perception of an anteroposterior sense from a change in a time direction of the mode value calculated by the disparity mode value calculating unit, and a control signal generating unit generating a sound control signal to control a depth sense of sound information related to the dynamic image information in the time interval extracted by the time interval extracting unit. | 11-28-2013 |