Truls
Truls Arnegaard, Oslo NO
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20080235280 | METHOD AND APPARATUS FOR OILFIELD DATA REPOSITORY - The invention relates to a method for performing operations of an oilfield having at least one wellsite, a surface network, and a process facility, each wellsite having a wellbore penetrating a subterranean formation for extracting fluid from an underground reservoir therein. The method includes storing oilfield data associated with a plurality of oilfield entities in a first data repository, obtaining a first target metamodel comprising structural description of a first plurality of data entities of the first data repository, obtaining a domain metamodel interleaved with a first mapping specification, the domain metamodel comprising structural description of a domain model for representing the plurality of oilfield entities in an application programming interface, obtaining a mapping specification associating the first target metamodel with the domain metamodel and forming the application programming interface based on the domain metamodel, the first target metamodel, and the first mapping specification using a computer implemented method. | 09-25-2008 |
20100044033 | OILFIELD APPLICATION FRAMEWORK - A method for performing an oilfield operation of an oilfield having a subterranean formation. The method includes collecting oilfield data and deploying a first plug-in including a first oilfield technology functionality into an oilfield hosting application. The method further includes performing an oilfield analysis on the collected oilfield data in the oilfield hosting application using the first oilfield technology functionality of the first plug-in to generate an oilfield output and adjusting an oilfield operation based on the oilfield output. | 02-25-2010 |
20110167089 | METHOD AND APPARATUS FOR OILFIELD DATA REPOSITORY - The invention relates to a method for performing operations of an oilfield having at least one wellsite, a surface network, and a process facility, each wellsite having a wellbore penetrating a subterranean formation for extracting fluid from an underground reservoir therein. The method includes storing oilfield data associated with a plurality of oilfield entities in a first data repository, obtaining a first target metamodel comprising structural description of a first plurality of data entities of the first data repository, obtaining a domain metamodel interleaved with a first mapping specification, the domain metamodel comprising structural description of a domain model for representing the plurality of oilfield entities in an application programming interface, obtaining a mapping specification associating the first target metamodel with the domain metamodel and forming the application programming interface based on the domain metamodel, the first target metamodel, and the first mapping specification using a computer implemented method. | 07-07-2011 |
20130327521 | OILFIELD APPLICATION FRAMEWORK - A method for performing an oilfield operation of an oilfield having a subterranean formation. The method includes collecting oilfield data and deploying a first plug-in including a first oilfield technology functionality into an oilfield hosting application. The method further includes performing an oilfield analysis on the collected oilfield data in the oilfield hosting application using the first oilfield technology functionality of the first plug-in to generate an oilfield output and adjusting an oilfield operation based on the oilfield output. | 12-12-2013 |
Truls Lowgren, Malmö SE
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20100221882 | Nanoelectronic structure and method of producing such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 09-02-2010 |
Truls Lowgren, Malmö SE
Patent application number | Description | Published |
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20100102380 | METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 04-29-2010 |
20100176459 | ASSEMBLY OF NANOSCALED FIELD EFFECT TRANSISTORS - The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic. | 07-15-2010 |
20100221882 | Nanoelectronic structure and method of producing such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 09-02-2010 |
20110316019 | Nanoelectronic Structure and Method of Producing Such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 12-29-2011 |
20140103423 | METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 04-17-2014 |
20140179087 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 06-26-2014 |
20140312381 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 10-23-2014 |
Truls Lowgren, Palo Alto, CA US
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20130092900 | NANOWIRE SIZED OPTO-ELECTRONIC STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a minor provided on a second conductivity type semiconductor side of the structure. | 04-18-2013 |
20140141555 | NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices. | 05-22-2014 |
Truls LÔwgren, Palo Alto, CA US
Patent application number | Description | Published |
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20110309382 | NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices. | 12-22-2011 |
Truls Löwgren, Malmo SE
Patent application number | Description | Published |
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20100102380 | METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 04-29-2010 |
20100176459 | ASSEMBLY OF NANOSCALED FIELD EFFECT TRANSISTORS - The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic. | 07-15-2010 |
20120211727 | Method of Producing Precision Vertical and Horizontal Layers in a Vertical Semiconductor Structure - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 08-23-2012 |
Truls Nilsson, Saltsjobaden SE
Patent application number | Description | Published |
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20100087572 | ENVIRONMENTALLY SAFE FIRE RETARDANT PROTEIN FREE COMPOSITION, A METHOD OF MANUFACTURING THEREOF - A method for producing an all purpose harmless fire retardant protein free composition that is adaptable to be incorporated into a range of differing material, of which said material forms an intermediate or finished product requiring fire retardant characteristics, said method including the steps of, (A) dissolving a mono-carboxylic acid, selected from a group, consisting of at least one of, or a combination therefore, of formic acid, acetic acid, stearic acid and/or benzoic acid, and/or an anhydrous di-carboxylic acid selected from a group, consisting of at least one of, or a combination therefore, of oxalic acid, malonic acid, succinic acid and/or glutaric acid, and/or an anhydrous tri-carboxylic acid, consisting of citric acid in an acetic acid solvent forming a solution with a pH in the range of 1.0 to 3.0, (B) adding tetra-sodium-pyrophosphate and water to A for an endothermic process, (C) adding calcium carbonates to the acidic solution B for the generation of an exothermic reaction, (D) once composition C becomes clumpy the composition is poured out onto a drying bed for drying, (E) the dried composition of step D is grounded, milled and/or grinded to achieve particles of less than 0.020 m, (F) encapsulate the particles of E with a surface coating material selected from a group, consisting of at least one of, or a combination therefore, of polysaccharide, tristearate and/or a wax of a polyethylene based material. (G) such that the encapsulation particulate crystals are blended during the formation of the intermediate or finished polymeric material in that the encapsulation provides means for the particulate crystals to remain inactive within and when applied to the polymeric material until said polymeric material is ignited by fire. | 04-08-2010 |