Patent application number | Description | Published |
20090140235 | Semiconductor element and process for producing the same - The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO | 06-04-2009 |
20100025088 | CONDUCTIVE PATTERN FORMING FILM, AND CONDUCTIVE PATTERN FORMING METHOD AND CONDUCTIVE PATTERN FORMING APPARATUS FOR THE CONDUCTIVE PATTERN FORMING FILM - The present invention forms a conductive pattern using a simple process on a general plastic substrate having flexibility, and also provides a conductive pattern forming film that allows for easy formation of a conductive pattern using an apparatus that performs a simple process of oriented pressurization at low temperature, as well as a method for forming conductive pattern and a conductive pattern forming apparatus for the same. | 02-04-2010 |
20100140756 | APPARATUS FOR MANUFACTURING SILICON OXIDE THIN FILM AND METHOD FOR FORMING THE SILICON OXIDE THIN FILM - An object of the present invention is to provide a semiconductor thin film device which employs a silicon oxide thin film having an equivalent level of high insulating performance to those currently used in electronic devices, through a low-temperature printing process on a plastic substrate having plasticity or other types of substrates at a temperature equal to or lower than the heat resistant temperature of the substrate, and to provide a method for forming the device. The semiconductor thin film device is formed as follows: a coating film of a silicon compound including a silazane structure or a siloxane structure is formed on a plastic substrate having plasticity; the coating film is converted into a silicon oxide thin film; and the thin film is utilized as part of an insulating layer or a sealing layer. | 06-10-2010 |
20110185948 | PROCESS FOR PRODUCING SILICON OXIDE THIN FILM OR SILICON OXYNITRIDE COMPOUND THIN FILM AND THIN FILM OBTAINED BY THE PROCESS - Disclosed is a process for producing a silicon oxide or silicon oxynitride thin film having a high level of water vapor and oxygen barrier property and a high strength with a higher efficiency by a solution process which is advantageous in productivity. Also disclosed is a thin film that is obtained by the process and is useful, for example, as a protective film for electric elements such as organic EL elements. A solution containing a smectite group silicate layered compound and a silazane compound is coated onto a surface of a substrate by a liquid phase process to form a film. The thin film thus obtained is exposed to ultraviolet light under an oxygen atmosphere to produce a silicon oxide thin film or a silicon oxynitride compound thin film containing the smectite group silicate layered compound. The smectite group silicate compound is a material represented by the following general formula. | 08-04-2011 |
20120222890 | CONDUCTIVE SUBSTRATE AND PROCESS FOR PRODUCING SAME - Provided are a conductive substrate which can be produced from inexpensive materials at a lower temperature than those for conventional substrates, and a process for producing the conductive substrate. The conductive substrate comprises a substrate ( | 09-06-2012 |
20140138654 | POLY ALPHA-AMINO ACID AND FERROELECTRIC MEMORY ELEMENT USING SAME - Ferroelectric memory elements which contain a poly α-amino acid which is a copolymer containing a glutamic acid-γ-ester unit represented by the formula (I), defined herein, and a glutamic acid-γ-ester unit represented by the formula (II), defined herein, in a molar ratio of units of formula (I) to units of formula (II) of 10/90-90/10 are useful as recording elements such as RFID and the like. | 05-22-2014 |
20140368083 | PIEZOELECTRIC ELEMENT - Poly(α-amino acid) which contain: (A) a glutamic acid γ-ester unit represented by formula (I): and (B) one or more kinds of units selected from a glutamic acid γ-ester unit represented by formula (II), an alanine unit, a phenylalanine unit and an N | 12-18-2014 |
20150311012 | MEMBRANE SWITCH AND OBJECT EMPLOYING SAME - A membrane switch in which a first conductive part is formed on a first substrate, a second conductive part is formed on a second substrate, and the substrates are layered via a spacer such that the conductive parts face each other with a space therebetween, and an organic material showing piezoelectricity is filled, or disposed in the space such that an air gap is present, are useful for obtaining an output signal corresponding to an applied pressure. | 10-29-2015 |