Patent application number | Description | Published |
20080266442 | Imaging apparatus and arranging method for the same - An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d | 10-30-2008 |
20090068787 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×10 | 03-12-2009 |
20100128153 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential. | 05-27-2010 |
20110127408 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region. | 06-02-2011 |
20110128400 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines. | 06-02-2011 |
20110248148 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential. | 10-13-2011 |
20120206635 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD AND ELECTRONIC EQUIPMENT - Disclosed herein is an image processing apparatus including: a storage section configured to store a correction matrix correcting crosstalk generated by a light or electron leak from an adjacent pixel existing among a plurality of pixels for receiving light in an imaging device; and a processing section configured to carry out processing to apply the correction matrix stored in the storage section to an image signal generated by the imaging device for each of the pixels. | 08-16-2012 |
20130038768 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit. | 02-14-2013 |
20130235243 | SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC APPARATUS - A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region. | 09-12-2013 |
20130329085 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD AND ELECTRONIC EQUIPMENT - Disclosed herein is an image processing apparatus including: a storage section configured to store a correction matrix correcting crosstalk generated by a light or electron leak from an adjacent pixel existing among a plurality of pixels for receiving light in an imaging device; and a processing section configured to carry out processing to apply the correction matrix stored in the storage section to an image signal generated by the imaging device for each of the pixels. | 12-12-2013 |
20140077068 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential. | 03-20-2014 |
20140118593 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines. | 05-01-2014 |
20140239433 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers. | 08-28-2014 |