Patent application number | Description | Published |
20080261145 | ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE - New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting. | 10-23-2008 |
20090074973 | Two-layer transparent electrostatic charge dissipating coating - A transparent two-layer electrostatic dissipating coating includes a first layer comprising a transparent first binder polymer and a first intrinsically conducting polymer (ICP) in an amount sufficient to provide the first layer with a surface resistance of from about 10 | 03-19-2009 |
20090075087 | SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES - New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating. | 03-19-2009 |
20090191474 | ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES - This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process. | 07-30-2009 |
20090218560 | METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE - New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. | 09-03-2009 |
20100112305 | CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING - New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process. | 05-06-2010 |
20110062604 | SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING - Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers. | 03-17-2011 |
20110069467 | METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE - New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. | 03-24-2011 |
20110086955 | CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING - New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process. | 04-14-2011 |
20110171478 | ACID-ETCH RESISTANT, PROTECTIVE COATINGS - New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system. | 07-14-2011 |
20110223524 | ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES - This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process. | 09-15-2011 |
20120034437 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 02-09-2012 |
20120130004 | SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES - New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer to which may or may not be crosslinked upon heating. | 05-24-2012 |
20120193762 | REVERSAL LITHOGRAPHY APPROACH BY SELECTIVE DEPOSITION OF NANOPARTICLES - A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask. | 08-02-2012 |
20120264056 | METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS - Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 μm. | 10-18-2012 |
20130288058 | DEVELOPMENT OF HIGH-VISCOSITY BONDING LAYER THROUGH IN-SITU POLYMER CHAIN EXTENSION - New compositions and methods of using those compositions as bonding compositions for temporary wafer bonding are provided. The compositions are used to temporarily bond an active wafer to a carrier wafer or substrate in microelectronic fabrication using an in situ polymerization reaction of the components of the bonding composition to yield the bonding layer. The compositions form polymerized bonding layers that are mechanically strong and thermally resistant, but allow the wafers to be separated at the appropriate stage in the fabrication process. The bonding layer also retains its solubility so that residue can be cleaned from the debonded wafers using simple wet methods rather than etching or other harsh treatments. | 10-31-2013 |
20140130969 | METHODS OF TRANSFERRING DEVICE WAFERS OR LAYERS BETWEEN CARRIER SUBSTRATES AND OTHER SURFACES - New temporary bonding methods and articles formed from those methods are provided. In one embodiment, the methods comprise coating a device or other ultrathin layer on a growth substrate with a rigid support layer and then bonding that stack to a carrier substrate. The growth substrate can then be removed and the ultrathin layer mounted on a final support. In another embodiment, the invention provides methods of handling device layers during processing that must occur on both sides of the fragile layer without damaging it. This is accomplished via the sequential use of two carriers, one on each side of the device layer, bonded with different bonding compositions for selective debonding. | 05-15-2014 |
20140162034 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 06-12-2014 |
20140174627 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 06-26-2014 |
20140239453 | MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING - Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side. | 08-28-2014 |
20150064385 | DUAL-LAYER BONDING MATERIAL PROCESS FOR TEMPORARY BONDING OF MICROELECTRONIC SUBSTRATES TO CARRIER SUBSTRATES - A process is disclosed for using two polymeric bonding material layers to bond a device wafer and carrier wafer in a way that allows debonding to occur between the two layers under low-force conditions at room temperature. Optionally, a third layer is included at the interface between the two layers of polymeric bonding material to facilitate the debonding at this interface. This process can potentially improve bond line stability during backside processing of temporarily bonded wafers, simplify the preparation of bonded wafers by eliminating the need for specialized release layers, and reduce wafer cleaning time and chemical consumption after debonding. | 03-05-2015 |