Patent application number | Description | Published |
20080241736 | RESIST COMPOSITION AND PATTERNING PROCESS - To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography. | 10-02-2008 |
20090011365 | RESIST COMPOSITION AND PATTERNING PROCESS - To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing α-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography. | 01-08-2009 |
20090186307 | HYDROGENATED RING-OPENING METATHESIS POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS - Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance. | 07-23-2009 |
20090208867 | Resist Composition, Resist Protective Coating Composition, and Patterning Process - A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects. | 08-20-2009 |
20090208873 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects. | 08-20-2009 |
20090246686 | POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS - A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base. | 10-01-2009 |
20100112482 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C | 05-06-2010 |
20100136482 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure. | 06-03-2010 |
20100266957 | RESIST COMPOSITION AND PATTERNING PROCESS - An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R | 10-21-2010 |
20100304295 | ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R | 12-02-2010 |
20120045724 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference. | 02-23-2012 |
20120077121 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS - Fluoroalcohol compounds of formula (1) are useful in producing polymers which are used as the base resin to formulate radiation-sensitive resist compositions having transparency to radiation having a wavelength of up to 500 nm and improved development characteristics. R | 03-29-2012 |
20120100486 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias. | 04-26-2012 |
20120135350 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved. | 05-31-2012 |
20120135357 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS - A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance. | 05-31-2012 |
20120183904 | NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution. | 07-19-2012 |
20120196227 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, PATTERNING PROCESS, AND ACID-DECOMPOSABLE KETO ESTER COMPOUND - A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER. | 08-02-2012 |
20120225386 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability. | 09-06-2012 |
20120270159 | PATTERNING PROCESS - A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB. | 10-25-2012 |
20120276485 | PATTERNING PROCESS - A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB. | 11-01-2012 |
20120288796 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal. | 11-15-2012 |
20120308930 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group and/or hydroxy group and recurring units having an oxirane or oxetane ring, an acid generator, and an organic solvent displays a high dissolution contrast in organic solvent development and controlled acid diffusion. A fine hole pattern featuring good size control can be formed. | 12-06-2012 |
20120328987 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance. | 12-27-2012 |
20130065183 | PATTERNING PROCESS AND RESIST COMPOSITION - A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. | 03-14-2013 |
20130101936 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance. | 04-25-2013 |
20130130177 | NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION - A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a hydroxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer. | 05-23-2013 |
20130130183 | NEGATIVE PATTERN FORMING PROCESS - A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a | 05-23-2013 |
20130157194 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution. | 06-20-2013 |
20130224659 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR. | 08-29-2013 |
20130224660 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonic acid anion-containing polymer having a triarylsulfonium cation is prepared by (1) preparing a sulfonic acid anion-containing polymer having an ammonium or metal cation not bound thereto, (2) purifying the polymer by water washing or crystallization, and (3) then reacting the polymer with a triarylsulfonium salt. A resist composition comprising the inventive polymer is effective for controlling acid diffusion since the sulfonium salt is bound to the polymer backbone. | 08-29-2013 |
20130231491 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C | 09-05-2013 |
20130337383 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control. | 12-19-2013 |
20140011136 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a branched polymer having chains extending in at least three directions and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast and no swell during organic solvent development, and forms a pattern without collapse and bridging defects. | 01-09-2014 |
20140199632 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent displays a high dissolution contrast. A fine hole or trench pattern can be formed therefrom. | 07-17-2014 |
20140212808 | PATTERNING PROCESS AND RESIST COMPOSITION - A resist composition comprising a polymer comprising recurring units having an acid labile group of cyclopentyl with tert-butyl or tert-amyl pendant is coated onto a substrate, baked, exposed to high-energy radiation, PEB and developed in an organic solvent to form a negative pattern. A fine hole pattern can be formed from the resist composition with advantages including high dissolution contrast, good size control and wide depth of focus. | 07-31-2014 |
20140242518 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance. | 08-28-2014 |
20140255843 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R | 09-11-2014 |
20140308614 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R | 10-16-2014 |
20140322650 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R | 10-30-2014 |
20150086926 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS - A carboxylic acid sulfonium salt having formula (1) is provided wherein R | 03-26-2015 |