Tomiga
Takamitsu Tomiga, Haibara-Gun JP
Patent application number | Description | Published |
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20080242090 | METAL-POLISHING LIQUID AND POLISHING METHOD - A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, | 10-02-2008 |
20080242091 | METAL-POLISHING LIQUID AND POLISHING METHOD - A metal-polishing liquid used for chemical and mechanical polishing of copper wiring in a semiconductor device, the metal-polishing liquid comprising: (a) a tetrazole compound having a substituent in the 5-position; (b) a tetrazole compound not substituted in the 5-position; (c) abrasive grains; and (d) an oxidizing agent. | 10-02-2008 |
20090203215 | METAL POLISHING SLURRY AND CHEMICAL MECHANICAL POLISHING METHOD - A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1): | 08-13-2009 |
20110081612 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH - According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, | 04-07-2011 |
Takamitsu Tomiga, Shizuoka JP
Patent application number | Description | Published |
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20100075500 | Metal polishing slurry and chemical mechanical polishing method - The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X | 03-25-2010 |
20110269071 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION - An actinic ray-sensitive or radiation-sensitive resin composition of the first invention includes (A1) an acid-decomposable resin, the resin containing three kinds of repeating units each having a specific structure, (B) a photo-acid generator and (C1) a 2-phenylbenzimidazole-based basic compound; an actinic ray-sensitive or radiation-sensitive resin composition of the second invention includes (A2) an acid-decomposable resin, (B) a photo-acid generator and (C2) 2-heteryl benzimidazole-based basic compound; a chemical amplification resist composition of the third invention includes (A3) an acid-decomposable resin, (B) a photo-acid generator and (C3) a benzimidazole-based basic compound having a sulfur atom-containing specific structure; and a resist film and a pattern forming method each use such a composition. | 11-03-2011 |
Takamitsu Tomiga, Shizuoka-Ken JP
Patent application number | Description | Published |
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20080206995 | METAL-POLISHING LIQUID AND POLISHING METHOD THEREWITH - The present invention provides a metal-polishing liquid that is used in chemical mechanical polishing for a conductor film made of copper or a copper alloy during semiconductor device production, wherein the metal-polishing liquid comprises the following components (1), (2) and (3): | 08-28-2008 |
20090239380 | POLISHING LIQUID FOR METAL AND POLISHING METHOD USING THE SAME - A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid. | 09-24-2009 |