Patent application number | Description | Published |
20110006860 | FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS - A piezoelectric thin film resonator of the present has a substrate | 01-13-2011 |
20110227807 | FILTER, DUPLEXER AND ELECTRONIC DEVICE - A ladder type filter includes series resonators S | 09-22-2011 |
20110241800 | ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate ( | 10-06-2011 |
20110267155 | FILTER ELEMENT, DUPLEXER AND ELECTRONIC DEVICE - A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other. | 11-03-2011 |
20120104900 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride. | 05-03-2012 |
20120112854 | DUPLEXER AND ELECTRONIC DEVICE HAVING THE SAME - In one aspect of the invention, a duplexer including a multilayer substrate with multiple stacked layers and a back surface with a rectangular shape is disclosed. An antenna terminal, a transmission terminal, a reception terminal, a ground terminal, and a conductor are provided in various positions on the multilayer substrate for improved performance. | 05-10-2012 |
20120146744 | ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion. | 06-14-2012 |
20120182092 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. A frequency control film is provided on an upper side of a resonance area in which the upper electrode and the lower electrode face each other in at least one of the main resonator and the sub resonator. The frequency control film has multiple convex patterns, and the convex patterns are arranged with a common pitch for spurious adjustment and with different areas in the main resonator and the sub resonator. | 07-19-2012 |
20120198672 | METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE - A method for manufacturing an acoustic wave device includes: bonding a piezoelectric substrate to a first surface of a first support substrate; thinning the piezoelectric substrate after the bonding to thus form a piezoelectric layer; forming a first electrode on a first surface of the piezoelectric layer; forming holes in the first support substrate located below the first electrode; and bonding a second support substrate to a second surface of the first support substrate opposite to the first surface after the forming of holes. | 08-09-2012 |
20120200195 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. The sub resonator has a mass addition film on the upper electrode in a resonance area in which the upper electrode and the lower electrode face each other. At least one of the main resonator and the sub resonator is provided with a frequency control film on an upper side of the resonance area, and the frequency control film has a weight per unit area smaller than a weight of the mass addition film per unit area. | 08-09-2012 |
20120200199 | PIEZOELECTRIC THIN-FILM RESONATOR - A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion. | 08-09-2012 |
20120200373 | ACOUSTIC WAVE DEVICE AND FILTER - An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern. | 08-09-2012 |
20120256706 | PIEZOELECTRIC THIN FILM RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION DEVICE - A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered. | 10-11-2012 |
20120293276 | DUPLEXER, COMMUNICATION MODULE, AND COMMUNICATION DEVICE - A duplexer includes an unbalanced transmitting filter; a balanced receiving filter; a transmitting port connected to the transmitting filter; and a first receiving port and a second receiving port connected to the receiving filter. The duplexer also includes an electromagnetic coupling portion connected between the transmitting port and the first receiving port and between the transmitting port and the second receiving port. The electromagnetic coupling portion adjusts the phase between electric power that flows from the transmitting port to the first receiving port and electric power that flows from the transmitting port to the second receiving port. | 11-22-2012 |
20120293277 | FILTER, DUPLEXER, COMMUNICATION MODULE, COMMUNICATION DEVICE - The filter includes one or more series resonators and one or more parallel resonators. An inductance is connected in series to at least a parallel resonator of the parallel resonators, and a antiresonance frequency of the parallel resonator to which the inductance is connected in series is equal to or higher than that of the series resonators. The duplexer, the communication module and the communication device are provided with the filter. | 11-22-2012 |
20120299444 | PIEZOELECTRIC THIN-FILM RESONATOR, COMMUNICATION MODULE AND COMMUNICATION DEVICE - A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode and an upper electrode that is located opposite the lower electrode across at least a part of the piezoelectric film. A mass load film is provided on the upper electrode. The mass load film includes a plurality of concave or convex patterns in at least a region that faces the lower electrode. The plurality of concave or convex patterns are densely arranged in a central portion of the region and are sparsely arranged in a peripheral portion of the region. | 11-29-2012 |
20120306591 | ELECTRONIC CIRCUIT AND ELECTRONIC MODULE - An electronic circuit includes a plurality of duplexers that are coupled to an antenna terminal and have a pass band different from each other and a plurality of acoustic wave filters that are respectively coupled between the antenna terminal and the plurality of the duplexers, wherein filter characteristics of a first acoustic wave filter of the plurality of the acoustic wave filters are set so as to allow passage of a signal in both a pass band for transmitting and a pass band for receiving of a first duplexer of the plurality of the duplexers that is coupled to the first acoustic wave filter and suppress passage of a signal in both a pass band for transmitting and a pass band for receiving of a second duplexer of the plurality of the duplexers that is different from the first duplexer. | 12-06-2012 |
20120313725 | FILTER, DUPLEXER, COMMUNICATION MODULE AND COMMUNICATION DEVICE - The filter includes: a primary transducer connected to a primary terminal; a secondary transducer connected to a plurality of secondary terminals; and a coupling transducer for mechanically coupling the primary transducer and the secondary transducer. | 12-13-2012 |
20120313726 | FILTER, DUPLEXER, COMMUNICATION MODULE AND COMMUNICATION DEVICE - A filter includes a plurality of primary resonators connected to a serial arm, a plurality of secondary resonators connected to a parallel arm, a primary inductor connected to at least one of the plurality of primary resonators and a secondary inductor connected to at least one of the plurality of secondary resonators. The primary inductor is arranged so as not to be connected to a path between the secondary resonator to which the secondary inductor is connected in parallel and the primary resonator that is connected to the secondary resonator to which the secondary inductor is connected in parallel. | 12-13-2012 |
20130033151 | PIEZOELECTRIC THIN-FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME - A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film. | 02-07-2013 |
20130033337 | ACOUSTIC WAVE FILTER - An acoustic wave filter including piezoelectric thin film resonators, in which at least two of the piezoelectric thin film resonators including: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located across at least a part of the piezoelectric film; a mass load film for a frequency control located in a resonance region where the lower electrode and the upper electrode face each other, and having a shape different from that of the resonance region; and a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric film, at least a part of the temperature compensation film being located between the lower electrode and the upper electrode in the resonance region, and areas of mass load films of said at least two of the piezoelectric thin film resonators are different from each other. | 02-07-2013 |
20130038405 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film located between the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an outer periphery of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other is positioned further in than an outer periphery of the upper electrode. | 02-14-2013 |
20130127565 | DUPLEXER - A duplexer includes a transmission filter and a reception filter having different passbands, wherein: first resonators that are series resonators or parallel resonators included in the transmission and reception filters so as to form a skirt characteristic at a guard band side are a temperature compensated type piezoelectric thin film resonator or a surface acoustic wave resonator using Love waves, and second resonators that form a skirt characteristic at an opposite side to the guard band are one of a temperature non-compensated type piezoelectric thin film resonator, a surface acoustic wave resonator using a lithium tantalate substrate or a substrate made by bonding a lithium tantalate substrate on a sapphire substrate, and a surface acoustic wave resonator using Love waves. | 05-23-2013 |
20130147577 | FILTER AND DUPLEXER - A filter includes: a plurality of piezoelectric thin film resonators, each having a multilayered film including a lower electrode located on a substrate, a piezoelectric film located on the lower electrode, and an upper electrode located on the piezoelectric film so as to face the lower electrode, wherein at least two piezoelectric thin film resonators have thick film portions, in each of which the multilayered film is thicker in at least a part of an outer peripheral portion than in an inner portion of a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and lengths of the thick film portions from edges of the resonance regions are different from each other in the at least two piezoelectric thin film resonators. | 06-13-2013 |
20130207515 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a piezoelectric thin film resonator including: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film sandwiched by the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an area of the insulating film within a resonance region, in which the lower electrode and the upper electrode face each other across the at least two piezoelectric films, is different from an area of the resonance region. | 08-15-2013 |
20140132116 | ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME - An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film. | 05-15-2014 |
20140191826 | PIEZOELECTRIC THIN FILM RESONATOR AND FILTER - A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region. | 07-10-2014 |
20140210570 | PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND DUPLEXER - A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted into the piezoelectric film, is located in at least a part of an outer periphery region in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and is not located in a center region of the resonance region. | 07-31-2014 |
20140361664 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film. | 12-11-2014 |