Patent application number | Description | Published |
20130052758 | REMOVING ALUMINUM NITRIDE SECTIONS - Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching. | 02-28-2013 |
20130082237 | ULTRAVIOLET LIGHT EMITTING DEVICES HAVING ENHANCED LIGHT EXTRACTION - Light emitting devices having an enhanced degree of polarization, P | 04-04-2013 |
20130250986 | OPTICALLY PUMPED SURFACE EMITTING LASERS INCORPORATING HIGH REFLECTIVITY/ BANDWIDTH LIMITED REFLECTOR - Optically pumped laser structures incorporate reflectors that have high reflectivity and are bandwidth limited to a relatively narrow band around the central laser radiation wavelength. In some cases, the reflectors may be ¾-wavelength distributed Bragg reflectors (DBRs). | 09-26-2013 |
20130343420 | SURFACE EMITTING LASER INCORPORATING THIRD REFLECTOR - Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λ | 12-26-2013 |
20140072009 | ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER - A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ | 03-13-2014 |
20140133506 | DISTRIBUTED FEEDBACK SURFACE EMITTING LASER - A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ | 05-15-2014 |
20140231745 | P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS - A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al | 08-21-2014 |
20140369367 | Structure For Electron-Beam Pumped Edge-Emitting Device and Methods for Producing Same - A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s). | 12-18-2014 |