Patent application number | Description | Published |
20100171152 | INTEGRATED CIRCUIT INCORPORATING DECODERS DISPOSED BENEATH MEMORY ARRAYS - A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate. | 07-08-2010 |
20110019467 | VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION - A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided. | 01-27-2011 |
20110156044 | DENSE ARRAYS AND CHARGE STORAGE DEVICES - There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. | 06-30-2011 |
20120223380 | DENSE ARRAYS AND CHARGE STORAGE DEVICES - There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. | 09-06-2012 |
20120250396 | VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION - A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided. | 10-04-2012 |
20130314970 | PILLAR-SHAPED NONVOLATILE MEMORY AND METHOD OF FABRICATION - A pillar-shaped memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. Other aspects are also provided. | 11-28-2013 |
20140217491 | DENSE ARRAYS AND CHARGE STORAGE DEVICES - There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. | 08-07-2014 |
20140239248 | THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION - A three-dimensional memory is provided that includes a first memory level and a second memory level monolithically formed above the first memory level. The first memory level includes a first steering element coupled in series with and vertically stacked above or below a first non-volatile state change element. The second memory level includes a second steering element coupled in series with and vertically stacked above or below a second non-volatile state change element. Other aspects are also provided. | 08-28-2014 |
20150044833 | DENSE ARRAYS AND CHARGE STORAGE DEVICES - There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. | 02-12-2015 |