Patent application number | Description | Published |
20080212631 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 09-04-2008 |
20090057693 | LIGHT-EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS - A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks. | 03-05-2009 |
20090080489 | VERTICAL CAVITY SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS USING THE VERTICAL CAVITY SURFACE EMITTING LASER - Provided is a laser having a multilayer reflector that suppresses the multimode operation. A vertical cavity surface emitting laser includes a first mirror, a cavity having an active layer, and a second mirror that are laminated. The second mirror is a multilayer reflector comprised of a first layer and a second layer that are alternately plurally laminated, the second layer having a refractive index higher than that of the first layer. At least one of the plural second layers has an oxidized confinement structure having an oxidized region and a non-oxidized region. | 03-26-2009 |
20090135872 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMING APPARATUS INCLUDING SURFACE EMITTING LASER - A surface emitting laser that oscillates at a wavelength λ includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of Al | 05-28-2009 |
20090135876 | SURFACE-EMITTING LASER AND OPTICAL APPARATUS FORMED BY USING SURFACE-EMITTING LASER - A surface-emitting laser has an active layer between a first distributed Bragg reflector and a second distributed Bragg reflector. The first distributed Bragg reflector is formed so as to have a resonant mode and a first longitudinal mode different from the resonant mode included in the reflectivity stop band and a second longitudinal mode different from the resonant mode and the first longitudinal mode excluded from the reflectivity stop band. Oscillation is suppressed in the first longitudinal mode and in the second longitudinal mode. As a result, the surface-emitting laser can oscillate in a single longitudinal mode, suppressing longitudinal mode hopping. | 05-28-2009 |
20090213889 | SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS - A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror. | 08-27-2009 |
20090252532 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 10-08-2009 |
20100027576 | SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure. | 02-04-2010 |
20100027578 | SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer. | 02-04-2010 |
20100029030 | PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS - Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision. | 02-04-2010 |
20100252809 | LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS - A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers. | 10-07-2010 |
20100272143 | OPTICAL DEVICE INCLUDING MULTILAYER REFLECTOR AND VERTICAL CAVITY SURFACE EMITTING LASER - Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not λ/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of λ/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength λ includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than λ/4. The second layer has an optical thickness larger than λ/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector. | 10-28-2010 |
20100322669 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 12-23-2010 |
20100329745 | PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS - Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision. | 12-30-2010 |
20110026555 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS - A surface emitting laser includes a pair of multilayer mirrors disposed opposing to each other, and an active layer disposed between the multilayer mirrors. In at least one multilayer mirror of the pair of multilayer mirrors, a plurality of first pair layers are stacked, each first pair layer is formed from a high-refractive index layer having a first strain and a low-refractive index layer having a second strain; and a second pair layer is included, the second pair layer is formed of one of the high-refractive index layer and the low-refractive index layer of the first pair layer in which one of the high-refractive index layer and the low-refractive index layer of the first pair layer is replaced with a layer formed from a quaternary or higher mixed crystal semiconductor material having a third strain. | 02-03-2011 |
20110150025 | SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer. | 06-23-2011 |
20110293331 | SURFACE-EMITTING LASER AND IMAGE FORMING APPARATUS USING THE SAME - This invention provides a surface-emitting laser that can prevent delamination at the interface of a selective oxidation layer and a spacer layer, while suppressing any rise of voltage, to improve the reliability of operation. | 12-01-2011 |
20120032143 | EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region. | 02-09-2012 |
20120076163 | SURFACE EMITTING LASER WITH CURRENT CONSTRICTION LAYER AND MULTIPLE ACTIVE REGIONS - A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other. | 03-29-2012 |