Patent application number | Description | Published |
20110062547 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film. | 03-17-2011 |
20110175205 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device that can be manufactured using a simple process without ensuring a high embedding property; and a manufacturing method of the device. In the manufacturing method of the semiconductor device according to the invention, a semiconductor substrate having a configuration obtained by stacking a support substrate, a buried insulating film, and a semiconductor layer in order of mention is prepared first. Then, an element having a conductive portion is completed over the main surface of the semiconductor layer. A trench encompassing the element in a planar view and reaching the buried insulating film from the main surface of the semiconductor layer is formed. A first insulating film (interlayer insulating film) is formed over the element and in the trench to cover the element and form an air gap in the trench, respectively. Then, a contact hole reaching the conductive portion of the element is formed in the first insulating film. | 07-21-2011 |
20110284987 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device capable of suppressing malfunction of an element to be protected, caused by electrons from an output element into a semiconductor substrate. The semiconductor device is provided with the semiconductor substrate, the output element, the element to be protected, a tap part, and a first active-barrier structure. The first active-barrier structure is disposed between the element to be protected and the tap part. Further, the first active-barrier structure includes an n-type region joined with a p-type doped region, and a p-type region in ohmic coupling with the n-type region. | 11-24-2011 |
20120139087 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a semiconductor substrate; a pair of injection elements; an active barrier structure; and a p-type ground region. The semiconductor substrate has a main surface and a p-type region formed therein. The active barrier structure is arranged in a region sandwiched between the pair of injection elements over the main surface. The p-type ground region is a ground potential-applicable region which is formed closer to an end side of the main surface than the pair of injection elements and the active barrier structure, bypassing a region sandwiched between the pair of injection elements over the main surface, and which is electrically coupled to the p-type region. The p-type ground region is divided by a region adjacent to the region sandwiched between the pair of injection elements. | 06-07-2012 |
20130062662 | SEMICONDUCTOR DEVICE - In a semiconductor device, at least one of the ratio (collector contact area/collector active area) in the High Side IGBT and the ratio (contact area on p | 03-14-2013 |
20130134549 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film. | 05-30-2013 |
20150214356 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device capable of suppressing a reduction in breakdown voltage by suppressing a change in dimensions of a double RESURF structure, and a method of manufacturing the same. | 07-30-2015 |
20150249126 | SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved performances. A semiconductor substrate has, in the surface layer portion thereof, an n | 09-03-2015 |