Patent application number | Description | Published |
20130162306 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - Provided is a method for driving a semiconductor device, which allows a reduction in scale of a circuit, reduce the power consumption, and increase the speed of reading data. An H level (data “1”) potential or an L level (data “0”) potential is written to a node of a memory cell. Potentials of a source line and a bit line are set to the same potential at an M level (L level06-27-2013 | |
20130301331 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device including a volatile memory which achieves high speed operation and lower power consumption. For example, the semiconductor device includes an SRAM provided with first and second data holding portions and a non-volatile memory provided with third and fourth second data holding portions. The first data holding portion is electrically connected to the fourth data holding portion through a transistor. The second data holding portion is electrically connected to the third data holding portion through a transistor. While the SRAM holds data, the transistor is on so that both the SRAM and the non-volatile memory hold the data. Then, the transistor is turned off before supply of power is stopped, so that the data becomes non-volatile. | 11-14-2013 |
20130301332 | SEMICONDUCTOR DEVICE - To provide a semiconductor device with high reliability in operation, in which data in a volatile memory can be saved to a non-volatile memory. For example, the semiconductor device includes an SRAM provided with first and second data storage portions and a non-volatile memory provided with third and fourth data storage portions. The first data storage portion is electrically connected to the fourth data storage portion through a transistor, and the second data storage portion is electrically connected to the third data storage portion through a transistor. The transistors are turned off when the SRAM operates, and the transistors are turned on when the SRAM does not operate, so that data in the SRAM is saved to the non-volatile memory. Precharge is performed when the SRAM is restored. | 11-14-2013 |
20130314976 | METHOD FOR DRIVING MEMORY ELEMENT - To provide a memory element which keeps a stored logic state even without supply of power. To increase an effect of reducing power consumption by facilitating stop of supply of power to the memory element for a short time. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of the capacitor included in a memory circuit are connected by lowering a potential of the other electrode of a capacitor before a transistor is turned on. By making a potential of the other electrode of the capacitor when the transistor is in an off state higher than a potential of the other electrode of the capacitor when the transistor is in an on state, a potential of the node can be reliably held even without supply of power. | 11-28-2013 |
20140266379 | SEMICONDUCTOR DEVICE - A sample-and-hold circuit including a transistor and a capacitor is connected to the differential circuit. The sample-and-hold circuit acquires voltage for correcting the offset voltage of the differential circuit by charging or discharging the capacitor through sampling operation. Then, it holds the potential of the capacitor through holding operation. In normal operation of the differential circuit, the output potential of the differential circuit is corrected by the potential held by the capacitor. The transistor in the sample-and-hold circuit is preferably a transistor whose channel is formed using an oxide semiconductor. An oxide semiconductor transistor has extremely low leakage current; thus, a change in the potential held in the capacitor of the sample-and-hold circuit can be minimized. | 09-18-2014 |
20140286073 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - To provide a semiconductor device which can write and read a desired potential. The semiconductor device includes a first transistor (Tr), a second Tr, and a capacitor. In the semiconductor device, operation of writing data is performed by a first step and a second step. In the first step, a low voltage is applied to a bit line and a first wiring to turn on the first Tr and the second Tr. In the second step, a first voltage is applied to the first wiring, and application of the low voltage to the bit line is stopped. Operation of reading the data is performed by a third step and a fourth step. In the third step, a high voltage is applied to the first wiring. In the fourth step, application of the high voltage to the first wiring is stopped, and a low voltage is applied to a capacitor line. | 09-25-2014 |
20140339541 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which storage capacity needed for holding data can be secured even with miniaturized elements is provided. In the semiconductor device, electrodes of a capacitor are an electrode provided in the same layer as a gate of a transistor and an electrode provided in the same layer as a source and a drain of the transistor. Further, a layer in which the gate of the transistor is provided and a wiring layer connecting the gates of the transistors in a plurality of memories are provided in different layers. With this structure, parasitic capacitance formed around the gate of the transistor can be reduced, and the capacitor can be formed in a larger area. | 11-20-2014 |
20150091629 | Bootstrap Circuit and Semiconductor Device Having Bootstrap Circuit - A bootstrap circuit of which the capacitance of a bootstrap capacitor is small and which requires a shorter precharge period is provided. The bootstrap circuit includes transistors M | 04-02-2015 |