Patent application number | Description | Published |
20110003445 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step | 01-06-2011 |
20110049657 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines. | 03-03-2011 |
20110101431 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a technology capable of improving the property of an MRAM in a semiconductor device containing the MRAM. | 05-05-2011 |
20120199913 | Semiconductor Device Having Insulating Film With Increased Tensile Stress and Manufacturing Method Thereof - Over a semiconductor substrate, a silicon nitride film is formed so as to cover n-channel MISFETs. The silicon nitride film is a laminate film which may be made of first, second, and third silicon nitride films. The total film thickness of the first and second silicon nitride films is smaller than half a spacing between a first sidewall spacer and a second sidewall spacer. After being deposited, the first and second silicon nitride films are subjected to treatments to have increased tensile stresses. The total film thickness of the first, second, and third silicon nitride films is not less than half the spacing between the first and second sidewall spacers. The third silicon nitride film is not subjected to any tensile-stress-increasing treatment, or may be subjected to a lesser amount of such treatment. | 08-09-2012 |
20140175557 | SEMICONDUCTOR DEVICE HAVING INSULATING FILM WITH DIFFERENT STRESS LEVELS IN ADJACENT REGIONS AND MANUFACTURING METHOD THEREOF - An n-channel MISFETQn is formed in an nMIS first formation region of a semiconductor substrate and a p-channel MISFETQp is formed in an adjacent pMIS second formation region of the semiconductor substrate. A silicon nitride film having a tensile stress is formed to cover the n-channel MISFETQn and the p-channel MISFETQp. In one embodiment, the silicon nitride film in the nMIS formation region and the pMIS formation region is irradiated with ultraviolet rays. Thereafter, a mask layer is formed to cover the silicon nitride film in the nMIS formation region and to expose the silicon nitride film in the pMIS formation region. The silicon nitride film in the pMIS formation region is then subjected to plasma processing, which relieves the tensile stress of the silicon nitride film in the pMIS formation region. | 06-26-2014 |
20150194340 | METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In high-NA ArF liquid immersion exposure after the 45 nm technology node, particularly, in microfabrication steps such as contact step, variation in the diameter of a contact hole or the like has occurred frequently. A silicon nitride-based insulating film is inserted between a multilayer resist and an insulating film to be processed in a contact step and the like. This makes it possible to reduce variation in the diameter of a contact hole in the contact step and the like. | 07-09-2015 |
20150206787 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O | 07-23-2015 |
20160133507 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O | 05-12-2016 |