Patent application number | Description | Published |
20090095962 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY APPARATUS, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY APPARATUS - A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range. | 04-16-2009 |
20100159619 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A gate insulating film ( | 06-24-2010 |
20120196395 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction. | 08-02-2012 |