Patent application number | Description | Published |
20080207094 | Method and apparatus for ultra thin wafer backside processing - A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls. | 08-28-2008 |
20080242052 | Method of forming ultra thin chips of power devices - A method for making thin semiconductor devices is disclosed. Starting from wafer with pre-fabricated front-side devices, the method includes:
| 10-02-2008 |
20090020854 | Process of forming ultra thin wafers having an edge support ring - A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes. | 01-22-2009 |
20090134503 | Semiconductor power device package having a lead frame-based integrated inductor - A semiconductor power device package having a lead frame-based integrated inductor is disclosed. The semiconductor power device package includes a lead frame having a plurality of leads, a inductor core attached to the lead frame such that a plurality of lead ends are exposed through a window formed in the inductor core, a plurality of bonding wires, ones of the plurality of bonding wires coupling each of the plurality of lead ends to adjacent leads about the inductor core to form the inductor, and a power integrated circuit coupled to the inductor. In alternative embodiments, a top lead frame couples each of the plurality of lead ends to adjacent leads about the inductor core by means of a connection chip. | 05-28-2009 |
20090134964 | Lead frame-based discrete power inductor - A lead frame-based discrete power inductor is disclosed. The power inductor includes top and bottom lead frames, the leads of which form a coil around a single closed-loop magnetic core. The coil includes interconnections between inner and outer contact sections of the top and bottom lead frames, the magnetic core being sandwiched between the top and bottom lead frames. Ones of the leads of the top and bottom lead frames have a generally non-linear, stepped configuration such that the leads of the top lead frame couple adjacent leads of the bottom lead frame about the magnetic core to form the coil. | 05-28-2009 |
20090160045 | WAFER LEVEL CHIP SCALE PACKAGING - A method for making back-to-front electrical connections in a wafer level chip scale packaging process is disclosed. A wafer containing a plurality of semiconductor chips is mounted on a package substrate. Each semiconductor chip in the plurality includes one or more electrodes on an exposed back side. Scribe lines between two or more adjacent chips on the wafer are removed to form relatively wide gaps. A conductive material is applied to the back side of the semiconductor chips and in the gaps. The conductive material in the gaps between two or more of the chips is then cut through leaving conductive material on the back side and on side walls of the two or more chips. As a result, the conductive material provides an electrical connection from the electrode on the back side of the chip to the front side of the chip. | 06-25-2009 |
20090160595 | Compact Power Semiconductor Package and Method with Stacked Inductor and Integrated Circuit Die - A power semiconductor package is disclosed with high inductance rating while exhibiting a reduced foot print. It has a bonded stack of power IC die at bottom, a power inductor at top and a circuit substrate, made of leadframe or printed circuit board, in the middle. The power inductor has a inductor core of closed magnetic loop. The circuit substrate has a first number of bottom half-coil forming conductive elements beneath the inductor core. A second number of top half-coil forming conductive elements, made of bond wires, three dimensionally formed interconnection plates or upper leadframe leads, are located atop the inductor core with both ends of each element connected to respective bottom half-coil forming conductive elements to jointly form an inductive coil enclosing the inductor core. A top encapsulant protectively encases the inductor core, the top half-coil forming conductive elements, the bottom half-coil forming conductive elements and the circuit substrate. | 06-25-2009 |
20090167477 | Compact Inductive Power Electronics Package - An inductive power electronics package is disclosed. It has a circuit substrate with power inductor attached atop. The power inductor has inductor core of closed magnetic loop with an interior window. The closed magnetic loop can include air gap for inductance adjustment. The circuit substrate has bottom half-coil forming elements constituting a bottom half-coil beneath the inductor core. Also provided are top half-coil forming elements interconnected with the bottom half-coil forming elements to form an inductive coil enclosing the inductor core. An inner connection chip can be added in the interior window for interconnecting bottom half-coil forming elements with top half-coil forming elements. An outer connection chip can be added about the inductor core for interconnecting bottom half-coil forming elements with top half-coil forming elements outside the inductor core. A power Integrated Circuit can be attached to the top side of the circuit substrate as well. | 07-02-2009 |
20090194880 | WAFER LEVEL CHIP SCALE PACKAGE AND PROCESS OF MANUFACTURE - Power wafer level chip scale package (CSP) and process of manufacture are enclosed. The power wafer level chip scale package includes all source, gate and drain electrodes located on one side of the device, which is convenient for mounting to a printed circuit board (PCB) with solder paste. | 08-06-2009 |
20090321929 | Standing chip scale package - A standing chip scale package is disclosed. The standing chip scale package provides electrical connection to bumped device contacts on both sides of the chip. The package is coupleable to a printed circuit board in a standing configuration such that front and back sides of the bumped chip are substantially perpendicular to a mounting surface. A process of fabricating the standing chip scale package is also disclosed. | 12-31-2009 |
20090322461 | PLANAR GROOVED POWER INDUCTOR STRUCTURE AND METHOD - An inductor may include a planar ferrite core. A first group of one or more grooves is formed in a first side of the ferrite core. A second group of two or more grooves is formed in a second side of the ferrite core. The grooves in the first and second groups are oriented such that each groove in the first group overlaps with two corresponding grooves in the second group. A first plurality of vias communicates through the ferrite core between the first and second sides of the ferrite core. Each via is located where a groove in the first group overlaps with a groove in the second group. A conductive material is disposed in the first and second groups of grooves and in the vias to form an inductor coil. | 12-31-2009 |
20100155878 | Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling - This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable current path traversing through the intermediate region. The semiconductor device further includes a trench with padded with insulation layer on sidewalls extended from the top region through the intermediate region toward the bottom region wherein the trench includes randomly and substantially uniformly distributed nano-nodules as charge-islands in contact with a drain region below the trench for electrically coupling with the intermediate region for continuously and uniformly distributing a voltage drop through the current path. | 06-24-2010 |
20100207283 | Wafer level chip scale package and method of laser marking the same - A wafer level chip scale package and method of laser marking the same are disclosed. The method includes forming a plurality of semiconductor devices on a frontside surface of a wafer, metallizing device contacts on the frontside surface of the wafer, grinding the backside surface of the wafer, silicon etching the backside surface of the wafer, laser marking the backside surface of the wafer following the silicon etch step, oxide etching the backside surface of the wafer following the laser marking step, depositing a metal layer on the backside surface of the wafer following the oxide etch step, and dicing the wafer into wafer level chip scale packages. A wafer level chip scale package includes a mark formed on a backside surface thereof, the mark comprising a plurality of trenches formed in a silicon backside surface and corresponding indentations formed in an overlaying back metal layer | 08-19-2010 |
20100221431 | METHOD AND APPARATUS FOR ULTRA THIN WAFER BACKSIDE PROCESSING - A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls. | 09-02-2010 |
20100320531 | STANDING CHIP SCALE PACKAGE - A standing chip scale package is disclosed. The standing chip scale package provides electrical connection to bumped device contacts on both sides of the chip. The package is coupleable to a printed circuit board in a standing configuration such that front and back sides of the bumped chip are substantially perpendicular to a mounting surface. A process of fabricating the standing chip scale package is also disclosed. | 12-23-2010 |
20100327314 | Insulated Gate Bipolar Transistor (IGBT) Collector Formed with Ge/A1 and Production Method - This invention discloses an IGBT device with its collector formed with Ge/Al and associated method of fabrication. The collector is formed on the substrate layer, which is on the back of IGBT, and contains Ge and Al thin films. After thinning and etching the back side of IGBT substrate, Ge and Al are sequentially deposited to form Ge/Al thin films on the back surface of the substrate. An annealing process is then carried out to diffuse Al into Ge thin film layer to form a P-doped Ge layer functioning as the IGBT collector. The present invention is applicable to both non punch through IGBTs as well as punch through IGBTs. | 12-30-2010 |
20110018116 | CHIP SCALE SURFACE MOUNTED SEMICONDUCTOR DEVICE PACKAGE AND PROCESS OF MANUFACTURE - A semiconductor device package die and method of manufacture are disclosed. The device package die may comprise a device substrate having one or more front electrodes located on a front surface of the device substrate and electrically connected to one or more corresponding device regions formed within the device substrate proximate the front surface. A back conductive layer is formed on a back surface of the device substrate. The back conductive layer is electrically connected to a device region formed within the device substrate proximate a back surface of the device substrate. One or more conductive extensions are formed on one or more corresponding sidewalls of the device substrate in electrical contact with the back conductive layer, and extend to a portion of the front surface of the device substrate. A support substrate is bonded to the back surface of the device substrate. | 01-27-2011 |
20110073999 | MIXED ALLOY LEAD FRAME FOR PACKAGING POWER SEMICONDUCTOR DEVICES AND ITS FABRICATION METHOD - This invention discloses a mixed alloy lead frame for power semiconductor devices, which includes a plurality of heat sinks and a pin array; the heat sinks are made of the first material, with positioning holes on their upper parts and welding zones at the center of their lower parts, while the pin array is made of the second material, which is different from the first material, with a plurality of sets of terminals leading out from its upper end and lower end respectively. The heat sinks are positioned on the lead frame assembly welding plate, the pin is positioned in the area between the upper heat sinks and lower heat sinks on the lead frame assembly welding plate. The mixed alloy lead frame for power semiconductor devices in this invention improves the heat dissipation of lead frame, reduces the fabrication cost of lead frame, and enhances the flexibility of fabrication. | 03-31-2011 |
20110107589 | PLANAR GROOVED POWER INDUCTOR STRUCTURE AND METHOD - An inductor may include a planar ferrite core. A first group of one or more grooves is formed in a first side of the ferrite core. A second group of two or more grooves is formed in a second side of the ferrite core. The grooves in the first and second groups are oriented such that each groove in the first group overlaps with two corresponding grooves in the second group. A first plurality of vias communicates through the ferrite core between the first and second sides of the ferrite core. Each via is located where a groove in the first group overlaps with a groove in the second group. A conductive material is disposed in the first and second groups of grooves and in the vias to form an inductor coil. | 05-12-2011 |
20110108896 | WAFER LEVEL CHIP SCALE PACKAGE AND PROCESS OF MANUFACTURE - Power wafer level chip scale package (CSP) and process of manufacture are enclosed. The power wafer level chip scale package includes all source, gate and drain electrodes located on one side of the device, which is convenient for mounting to a printed circuit board (PCB) with solder paste. | 05-12-2011 |
20110121934 | Lead Frame-based Discrete Power Inductor - A lead frame-based discrete power inductor is disclosed. The power inductor includes top and bottom lead frames, the leads of which form a coil around a single closed-loop magnetic core. The coil includes interconnections between inner and outer contact sections of the top and bottom lead frames, the magnetic core being sandwiched between the top and bottom lead frames. Ones of the leads of the top and bottom lead frames have a generally non-linear, stepped configuration such that the leads of the top lead frame couple adjacent leads of the bottom lead frame about the magnetic core to form the coil. | 05-26-2011 |
20110201174 | Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling - This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable current path traversing through the intermediate region. The semiconductor device further includes a trench with padded with insulation layer on sidewalls extended from the top region through the intermediate region toward the bottom region wherein the trench includes randomly and substantially uniformly distributed nano-nodules as charge-islands in contact with a drain region below the trench for electrically coupling with the intermediate region for continuously and uniformly distributing a voltage drop through the current path. | 08-18-2011 |
20110223742 | Process of forming ultra thin wafers having an edge support ring - A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes. | 09-15-2011 |
20110241214 | Virtually Substrate-less Composite Power Semiconductor Device and Method - A virtually substrate-less composite power semiconductor device (VSLCPSD) and method are disclosed. The VSLCPSD has a power semiconductor device (PSD), a front-face device carrier (FDC) made out of a carrier material and an intervening bonding layer (IBL). Both carrier and IBL material can be conductive or non-conductive. The PSD has back substrate portion, front semiconductor device portion with patterned front-face device metallization pads and a virtually diminishing thickness T | 10-06-2011 |
20110266683 | Stackable Power MOSFET, Power MOSFET Stack, and Process of Manufacture - A thin and stackable power MOSFET (SP-MOSFET) and method are proposed. The SVP-MOSFET includes semiconductor substrate with bottom drain metal layer. Formed atop the semiconductor substrate are trenched gate regions and source-body regions. A patterned gate metal layer and source-body metal layer respectively contact trenched gate regions and source-body regions. At least one of through substrate drain via (TSDV), through substrate gate via (TSGV), through substrate source via (TSSV) is provided. The TSDV, formed through semiconductor substrate and in contact with drain metal layer, has top drain contacting pad and bottom drain contacting pad for making top and bottom contacts thereto. Similarly the TSGV, formed through semiconductor substrate and in contact with gate metal layer, has top gate contacting pad and bottom gate contacting pad. Likewise the TSSV, formed through semiconductor substrate and in contact with source-body metal layer, has top source contacting pad and bottom source contacting pad. | 11-03-2011 |
20110291245 | Semiconductor Device with Substrate-Side Exposed Device-Side Electrode and Method of Fabrication - A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and semiconductor device region (SDR) at device-side. Device-side electrodes (DSE) are formed for device operation. A through substrate trench (TST) is extended through SCS, reaching a DSE turning it into an SEDE. The SEDE can be interconnected via conductive interconnector through TST. A substrate-side electrode (SSE) and a windowed substrate-side passivation (SSPV) atop SSE can be included. The SSPV defines an area of SSE for spreading solder material during device packaging. A device-side passivation (DSPV) beneath thus covering the device-side of SEDE can be included. A DSE can also include an extended support ledge, stacked below an SEDE, for structurally supporting it during post-wafer processing packaging. The projected footprint of extended support ledge onto the major SCS plane can essentially enclose the correspondingly projected footprint of SEDE. | 12-01-2011 |
20120104580 | SUBSTRATELESS POWER DEVICE PACKAGES - A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed. | 05-03-2012 |
20120161307 | CHIP SCALE SURFACE MOUNTED SEMICONDUCTOR DEVICE PACKAGE AND PROCESS OF MANUFACTURE - A semiconductor device package die and method of manufacture are disclosed. The device package die may comprise a device substrate having one or more front electrodes located on a front surface of the device substrate and electrically connected to one or more corresponding device regions formed within the device substrate proximate the front surface. A back conductive layer is formed on a back surface of the device substrate. The back conductive layer is electrically connected to a device region formed within the device substrate proximate a back surface of the device substrate. One or more conductive extensions are formed on one or more corresponding sidewalls of the device substrate in electrical contact with the back conductive layer, and extend to a portion of the front surface of the device substrate. A support substrate is bonded to the back surface of the device substrate. | 06-28-2012 |
20120202320 | WAFER-LEVEL CHIP SCALE PACKAGING OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS (MOSFET'S) - Wafer-level chip scale packaging of metal-oxide-semiconductor-field-effect-transistors (MOSFET's) provides protection and good solder-ability to a die backside by fabricating a plurality of power MOSFET devices with die contacts on a wafer that can later be cut into individual die. A plurality of contact pads is included on the wafer to provide connectivity to the die contacts. A layer which includes aluminum (Al) or zinc (Zn) is electrolessly plated on a backside of the wafer to form a metalized backside. The plating tank used in this step is not contaminated. The contact pads and metalized backside are plated with a layer of electroless nickel (Ni) followed by a layer of gold (Au). Solder balls are formed on each of the contact pads after their plating with nickel (Ni) and gold (Au). The wafer is diced to yield MOSFET wafer level chip-scale packages which provide protection and good solder-ability to the die backside. | 08-09-2012 |
20120235306 | Virtually Substrate-less Composite Power Semiconductor Device - A virtually substrate-less composite power semiconductor device (VSLCPSD) and method are disclosed. The VSLCPSD has a power semiconductor device (PSD), a front-face device carrier (FDC) made out of a carrier material and an intervening bonding layer (IBL). Both carrier and IBL material can be conductive or non-conductive. The PSD has back substrate portion, front semiconductor device portion with patterned front-face device metallization pads and a virtually diminishing thickness T | 09-20-2012 |
20120326300 | LOW PROFILE PACKAGE AND METHOD - In a method aspect, a multiplicity of ICs are attached to routing on a structurally supportive carrier (such as a wafer). The dice are encapsulated and then both the dice and the encapsulant layer are thinned with the carrier in place. A second routing layer is formed over the first encapsulant layer and conductive vias are provided to electrically couple the first and second routing layers as desired. External I/O contacts (e.g. solder bumps) are provided to facilitate electrical connection of the second routing layer (or a subsequent routing layer in stacked packages) to external devices. A contact encapsulant layer is then formed over the first encapsulant layer and the second routing layer in a manner that embeds the external I/O contacts at least partially therein. After the contact encapsulant layer has been formed, the carrier itself may be thinned significantly and singulated to provide a number of very low profile packages. The described approach can also be used to form stacked multi-chip packages. | 12-27-2012 |
20130127043 | MICRO SURFACE MOUNT DEVICE PACKAGING - A variety of improved approaches for packaging integrated circuits are described. In one described approach, a multiplicity of dice are mounted on a carrier (e.g., a plastic carrier). Each die has a plurality of wire bonded contact studs secured to its associated I/O pads. An encapsulant is applied over the carrier to cover the dice and at least portions of the contact studs to form an encapsulant carrier structure. After the encapsulant has been applied, a first surface of the encapsulant and the contact studs are ground such that exposed portions of the contact studs are smooth and substantially co-planar with the encapsulant. In some embodiments, a redistribution layer is formed over the encapsulant carrier structure and solder bumps are attached to the redistribution layer. A contact encapsulant layer is applied over the encapsulant carrier structure to provide extra mechanical support for the resulting packages. | 05-23-2013 |
20130127044 | MICRO SURFACE MOUNT DEVICE PACKAGING - A variety of improved approaches for packaging integrated circuits are described. In one described approach, a multiplicity of die cavities are formed in a plastic carrier. In some preferred embodiments, the die cavities are formed by laser ablation. A multiplicity of dice are placed on the carrier, with each die being placed in an associated die cavity. Each of the dice preferably has a multiplicity of I/O bumps formed thereon. An encapsulant is applied over the carrier to form an encapsulant layer that covers the dice and fills portions of the cavities that are not occupied by the dice. In some preferred embodiments, the encapsulant is an epoxy material applied by screen printing and the dice are not physically attached to the carrier prior to the application of the encapsulant. In these embodiments, the epoxy encapsulant serves to secure the dice to the carrier. | 05-23-2013 |
20130273697 | FABRICATION METHOD OF A MIXED ALLOY LEAD FRAME FOR PACKAGING POWER SEMICONDUCTOR DEVICES - This invention discloses a mixed alloy lead frame for power semiconductor devices, which includes a plurality of heat sinks and a pin array; the heat sinks are made of the first material, with positioning holes on their upper parts and welding zones at the center of their lower parts, while the pin array is made of the second material, which is different from the first material, with a plurality of sets of terminals leading out from its upper end and lower end respectively. The heat sinks are positioned on the lead frame assembly welding plate, the pin is positioned in the area between the upper heat sinks and lower heat sinks on the lead frame assembly welding plate. The mixed alloy lead frame for power semiconductor devices in this invention improves the heat dissipation of lead frame, reduces the fabrication cost of lead frame, and enhances the flexibility of fabrication. | 10-17-2013 |
20140076846 | METHOD AND APPARATUS FOR ULTRA THIN WAFER BACKSIDE PROCESSING - A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls. | 03-20-2014 |
20140239383 | WAFER LEVEL CHIP SCALE PACKAGE AND PROCESS OF MANUFACTURE - Power wafer level chip scale package (CSP) and process of manufacture are enclosed. The power wafer level chip scale package includes all source, gate and drain electrodes located on one side of the device, which is convenient for mounting to a printed circuit board (PCB) with solder paste. | 08-28-2014 |
20150035049 | Vertical Semiconductor MOSFET Device with Double Substrate-Side Multiple Electrode Connections and Encapsulation - A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and semiconductor device region (SDR) at device-side. Device-side electrodes (DSE) are formed for device operation. A through substrate trench (TST) is extended through SCS, reaching a DSE turning it into an SEDE. The SEDE can be interconnected via conductive interconnector through TST. A substrate-side electrode (SSE) and a windowed substrate-side passivation (SSPV) atop SSE can be included. The SSPV defines an area of SSE for spreading solder material during device packaging. A device-side passivation (DSPV) beneath thus covering the device-side of SEDE can be included. A DSE can also include an extended support ledge, stacked below an SEDE, for structurally supporting it during post-wafer processing packaging. The projected footprint of extended support ledge onto the major SCS plane can essentially enclose the correspondingly projected footprint of SEDE. | 02-05-2015 |
20150056752 | SUBSTRATELESS POWER DEVICE PACKAGES - A substrate-less composite power semiconductor device may be fabricated from a vertical conductive power semiconductor device wafer that includes a top metal layer located on a top surface of the wafer by a) forming solder bumps on top of the top metal layer; b) forming wafer level molding around the solder bumps such that the solder bumps are exposed through a top of the wafer level molding; c) grinding a back side of the device wafer to reduce a total thickness of a semiconductor material portion of the device wafer to a final thickness; and d) forming a back metal on a back surface of the wafer. | 02-26-2015 |