Patent application number | Description | Published |
20130158304 | METHOD FOR PRODUCING A FLUOROCOMPOUND - An object is to provide a method for producing 1,1,1,4,4,4-hexafluoro-2-butene with high efficiency, which is suitable for a flow reaction, and cis-1,1,1,4,4,4-hexafluoro-2-butene can be efficiently obtained when isomerization of hexafluoro-1,3-butadiene is conducted using a catalyst and the resultant mixture is successively subjected to catalytic hydrogenation to produce cis-1,1,1,4,4,4-hexafluoro-2-butene, wherein the whole process is performed by a flow catalytic reaction. | 06-20-2013 |
Patent application number | Description | Published |
20120205242 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn | 08-16-2012 |
20120286219 | SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM - The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure. | 11-15-2012 |
20130168241 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of Cu | 07-04-2013 |
20130319527 | Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer - A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm | 12-05-2013 |
20140001039 | Cu-Ga Alloy Sputtering Target and Method for Producing Same | 01-02-2014 |
20150232980 | Cu-Ga Alloy Sputtering Target, and Method for Producing Same - A melted and cast Cu—Ga alloy sputtering target containing 22 at % or more and 29 at % or less of Ga, and remainder being Cu and unavoidable impurities, wherein the Cu—Ga alloy sputtering target has an eutectoid structure configured from a mixed phase of a ζ phase, which is an intermetallic compound layer of Cu and Ga, and a γ phase, and satisfies a relational expression of D≦7×C−150 when a diameter of the γ phase is D μm and a Ga concentration is C at %. A sputtering target having a cast structure is advantageous in that gas components such as oxygen can be reduced in comparison to a sintered compact target. Thus, it is possible to reduce oxygen and obtain a target with a favorable cast structure, in which the segregated phase is dispersed, by continuously solidifying the sputtering target having the foregoing cast structure under a solidifying condition of a constant cooling rate. | 08-20-2015 |