Patent application number | Description | Published |
20080265710 | ELECTROSTATIC ACTUATOR - An electrostatic actuator includes first and second lower electrodes formed apart from each other above a substrate, an electrode portion formed above the first and second lower electrodes and first and second upper electrodes, a distance between the first upper electrode and the first lower electrode at a first portion being greater than that at a second portion, a distance between the second upper electrode and the second lower electrode at a third portion being greater than that at a fourth portion, a first boundary portion between the first and third upper electrodes having a convex shape, a second boundary portion between the second and third upper electrodes having a convex shape, and the electrode portion driving the third upper electrode, and first and second layers formed in the first and second boundary portions. | 10-30-2008 |
20090001845 | ACTUATOR - An actuator of the present invention includes a moving part, and a driving electrode which is comprised of electrode parts electrically isolated from each other and drives the moving part. A drive voltage is applied selectively to some of the electrode parts to control an electrostatic force which acts on the moving part. | 01-01-2009 |
20090127613 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a memory cell array of plural memory cells arranged in matrix. Each memory cell includes a first gate insulator layer formed on a semiconductor substrate, a floating gate formed on the semiconductor substrate with the first gate insulator layer interposed therebetween, a second gate insulator layer formed on the floating gate, and a control gate formed on the floating gate with the second gate insulator layer interposed therebetween. The first gate insulator layer is a first cavity layer. | 05-21-2009 |
20090231778 | HIGH FREQUENCY ELECTRICAL ELEMENT - A high frequency MEMS | 09-17-2009 |
20100051428 | SWITCH AND ESD PROTECTION DEVICE - A switch includes a first electrode provided on a substrate, an anchor provided on the substrate, a movable structure which is supported by the anchor, provided above the first electrode to be extended from the anchor in a direction, formed of a conductor, and moves downwards, and a contact member which is attached to an edge of the movable structure, formed of a conductor, and warps toward the first electrode. | 03-04-2010 |
20100126834 | SWITCH AND ESD PROTECTION ELEMENT - The switch of an aspect of the present invention including first and second electrodes provided on a substrate, an anchor provided on the first electrode, a movable structure of which a first end is supported by the anchor, extending from the anchor to a position above the second electrode, using a conductor, and configured to move in a vertical direction with respect to the second electrode, a contact portion provided at a second end of the movable structure and disposed above the second electrode, a film having a different stress value with respect to the stress value of the movable structure, and warping the contact portion toward the second electrode, and a cap provided on the substrate to cover the movable structure, configured to be in contact with the film, and functioning as a driving electrode. | 05-27-2010 |
20100237929 | VOLTAGE GENERATING CIRCUIT FOR ELECTROSTATIC MEMS ACTUATOR - A plurality of capacitors each of which has a first and a second electrode. A plurality of first switches is connected between the first electrodes of the plurality of capacitors and a first power supply. A plurality of second switches is connected between the second electrodes of the plurality of capacitors and a second power supply. A plurality of resistances each of which is connected between the first electrode of one of the plurality of capacitors and the second electrode of another capacitor and which connect the plurality of capacitors in series, a voltage for driving an actuator being output from the last stage of the plurality of capacitors connected in series. | 09-23-2010 |
20100246087 | SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR - A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator. | 09-30-2010 |
20100295486 | ACTUATOR - An actuator of the present invention includes a moving part, and a driving electrode which is comprised of electrode parts electrically isolated from each other and drives the moving part. A drive voltage is applied selectively to some of the electrode parts to control an electrostatic force which acts on the moving part. | 11-25-2010 |
20110043960 | PROGRAMMABLE ACTUATOR AND PROGRAMMING METHOD THEREOF - According to one embodiment, a programmable actuator includes a moving part with a first drive electrode, a second electrode which is placed opposite to the first electrode and which has first part and a second part, a first drive circuit which is available to operate the moving part one or more times in such a way that the first drive electrode is apart from the second part by generating a first electric potential difference between the first part and the first drive electrode, and a second drive circuit which is available to fix the moving part in such a way that the first drive electrode is in contact with the second part by generating a second electric potential difference between the second part and the first drive electrode. | 02-24-2011 |
20110063773 | MEMS DEVICE - According to one embodiment, a MEMS device includes first and second lower electrodes on a substrate, a first driving electrode forming a capacitance element having a first capacitance between the first lower electrode and the first driving electrode, a second driving electrode forming a capacitance element having a second capacitance between the second lower electrode and the second driving electrode, an upper electrode which is supported in midair above the driving electrodes and which moves toward the driving electrodes and which has a variable third capacitance between the first driving electrode and the upper electrode and has a variable fourth capacitance between the second driving electrode and the upper electrode. A capacitance value between the lower electrodes is determined by a value of a composite capacitance of the first to fourth capacitances connected in series, and the value of the composite capacitance is used as a variable capacitance value. | 03-17-2011 |
20110063774 | MEMS DEVICE - According to one embodiment, a MEMS devise includes an electrode on a substrate, a movable structure which is supported in midair above the electrode by first and second anchor portions on the substrate, and moves toward the electrode, a first spring structure which connects the first anchor portion to the movable structure and uses a ductile material, and a second spring structure which connects the second anchor portion to the movable structure and uses a brittle material. | 03-17-2011 |
20110115546 | SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR - A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator. | 05-19-2011 |
20110193501 | ELECTROSTATIC ACTUATOR APPARATUS AND METHOD OF DRIVING THE SAME - According to one embodiment, a method of driving an electrostatic actuator includes a first electrode provided on a substrate, a second electrode arranged above the first electrode to be movable in a vertical direction, and an insulating film provided between the first electrode and the second electrode, includes boosting a power supply voltage to generate a driving voltage of the electrostatic actuator, and applying the driving voltage to each of the first electrode and the second electrode when setting the electrostatic actuator in an up state. | 08-11-2011 |
20110199147 | ELECTROSTATIC ACTUATOR APPARATUS - According to one embodiment, an electrostatic actuator apparatus includes a first voltage generation circuit configured to generate a first voltage, a first switch connected between the first voltage generation circuit and a first node, a second voltage generation circuit configured to generate a second voltage, a second switch connected between the second voltage generation circuit and a second node, a capacitor connected between the first node and the second node, an electrostatic actuator having a drive electrode connected to the first node, and a control circuit configured to perform an operation of sequentially turning on the first switch, turning off the first switch and turning on the second switch when the electrostatic actuator is driven. | 08-18-2011 |
20120200239 | ELECTROSTATIC ACTUATOR APPARATUS - According to one embodiment, an electrostatic actuator apparatus includes a first voltage generation circuit configured to generate a first voltage, a first switch connected between the first voltage generation circuit and a first node, a second voltage generation circuit configured to generate a second voltage, a second switch connected between the second voltage generation circuit and a second node, a capacitor connected between the first node and the second node, an electrostatic actuator having a drive electrode connected to the first node, and a control circuit configured to perform an operation of sequentially turning on the first switch, turning off the first switch and turning on the second switch when the electrostatic actuator is driven. | 08-09-2012 |
20130106318 | SEMICONDUCTOR DEVICE AND DRIVE METHOD OF ELECTROSTATIC ACTUATOR | 05-02-2013 |
20130182366 | MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer. | 07-18-2013 |
20130234263 | MEMS ELEMENT - According to one embodiment, a MEMS element comprises a first electrode that is fixed on a substrate and has plate shape, a second electrode that is disposed above the first electrode while facing the first electrode, the second electrode being movable in a vertical direction and having plate shape, and a first film that includes a first cavity in which the second electrode is accommodated on the substrate. The second electrode is connected to an anchor portion connected to the substrate via a spring portion. An upper surface of the second electrode is connected to the first film. | 09-12-2013 |
20130286534 | VARIABLE-CAPACITOR DEVICE AND DRIVING METHOD THEREOF - According to one embodiment, a variable-capacitor device includes a first MEMS variable-capacitor element, and a second MEMS variable-capacitor element including one end series-connected to one end of the first MEMS variable-capacitor element. In a down-state, a first capacitance value of the first MEMS variable-capacitor element differs from a second capacitance value of the second MEMS variable-capacitor element. | 10-31-2013 |
20150068314 | MEMS DEVICE - According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first and second MEMS elements on the substrate. Each of the first and second MEMS elements includes a fixed electrode on the substrate, a movable electrode above the fixed electrode, a first insulating film, the first insulating film and the substrate defining a cavity in which the fixed and movable electrodes are contained, and a first anchor on a surface of the first insulating film inside the cavity and configured to connect the movable electrode to the first insulating film. The cavity of the first MEMS element is closed. The cavity of the second MEMS element is opened by a through hole. | 03-12-2015 |