Patent application number | Description | Published |
20140305499 | PROTECTIVE INSULATING LAYER AND CHEMICAL MECHANICAL POLISHING FOR POLYCRYSTALLINE THIN FILM SOLAR CELLS - A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer. | 10-16-2014 |
20140306306 | PROTECTIVE INSULATING LAYER AND CHEMICAL MECHANICAL POLISHING FOR POLYCRYSTALLINE THIN FILM SOLAR CELLS - A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer. | 10-16-2014 |
20150377702 | Spectrometer Insert for Measuring Temperature-Dependent Optical Properties - In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided. | 12-31-2015 |
20160035917 | Techniques for Perovskite Layer Crystallization - Vacuum annealing-based techniques for forming perovskite materials are provided. In one aspect, a method of forming a perovskite material is provided. The method includes the steps of: depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. A perovskite-based photovoltaic device and method of formation thereof are also provided. | 02-04-2016 |
20160035927 | Tandem Kesterite-Perovskite Photovoltaic Device - Tandem Kesterite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a bottom cell having a first absorber layer comprising copper, zinc, tin, and at least one of sulfur and selenium and a top cell connected in series with the bottom cell, the top cell having a second absorber layer comprising a perovskite material. A method of forming a tandem photovoltaic device is also provided. | 02-04-2016 |
20160040303 | Techniques for Photocatalytic Hydrogen Generation - Techniques for photocatalytic hydrogen generation are provided. In one aspect, a hydrogen producing cell is provided. The hydrogen producing cell includes an anode electrode; a photocatalytic material adjacent to the anode electrode; a solid electrolyte adjacent to a side of the photocatalytic material opposite the anode electrode; and a cathode electrode adjacent to a side of the solid electrolyte opposite the photocatalytic material. A solar hydrogen producing system including at least one solar concentrating assembly having the hydrogen producing cell, and a method for producing hydrogen using the hydrogen producing cell are also provided. | 02-11-2016 |
20160093755 | Epitaxial Growth of CZT(S,Se) on Silicon - Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided. | 03-31-2016 |
20160141434 | Hybrid Vapor Phase-Solution Phase Growth Techniques for Improved CZT(S,Se) Photovoltaic Device Performance - A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided. | 05-19-2016 |